李宏道
二維離子薄膜之結構相變與電子特性
(Structure Transition and Electronic Properties of Two-dimensional Ionic Thin Films)
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STM images of self-assembled ionic thin film with various sodium coverage (0~1ML). |
Si 2p 、Cl 2p and Na 2p (right) core level photoemission spectra for the ALD growth process. |
(a)-(f) Molecular dynamic process and (g) temperature history. |
鐘仁陽
鹼金屬鹵化物奈米薄膜在共價鍵半導體表面成長模式和電子結構
(Growth Mode and Electronic Structure of Alkali Halide Nano-Films on the Covalent Semiconductor Surfaces)
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(a) Si 2p and (b) Cl 2p core level photoemission spectra
(circles) of Cl-Si(100)-2×1 surface and Si(100) surface with various amounts of deposited KCl |
(a) Close-up image of c(4×4) structure extracted from Figure 3.
5b. Pink dashed rectangle denotes unit cell of ordered Cluster A. Bright protrusions on lower area are Cluster B. (b) Top view, (c) perspective view, and (d) (1,1,0) projection of atomic model of c(4×4) structures. |
Filled-state STM images
showing coverage evolution with deposition of (a) 0.65, (b) 0.95, (c) 1.55, and (d) 2.25 ML NaCl on Si(100) surface as labeled
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shows the apparent
topographic height profiles and corresponding schematic of NaCl films (large yellow rectangles) of one or two layers thick on Si(100) along the arrows in (a) Figure 4. 4 (a), (b) Figure 4. 4 (b), and (c) Figure 4. 4 (c) respectively. |
侯曉穎
由單一原子層影像探討氯化碘分子於鍺晶面之吸附過程
(Imaging the ICl-saturated Silicon Surfaces)
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| 氯化碘/矽(100) 1 ML 未佔據態(Unoccupied state)STM 影像圖 | 圖中c (2 × 2) 區域以方框標示 |
碘原子與鄰近原子之相關聯分佈。橫軸為與中心碘原子之距離，縱軸為該 位置與中心碘原子之相關聯關係。
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吳欣樺
氯化碘分子在矽和鍺晶面上選擇性吸附過程比較
(Comparison of Atomic Selectivity during the Abstractive Reactions of Iodine Monochloride on Si(100) and Ge(100))
簡靈櫻
氯化氫在矽表面上單一活性鍵的選擇性吸附
(Abstractive adsorption of a HCl molecule on an isolated dangling bond)
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| 在H/Si(100)表面製造出單一活性鍵(single dangling bond) | 單一活性鍵吸附HCl分子中的H原子的情形 |
單一活性鍵吸附HCl分子中的Cl原子的情形
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單一活性鍵和HCl分子的吸附過程示意圖，吸附H和 Cl的比例約為3:1 |
張展源
單一原子層離子固體在矽晶面上的成長與奇特排列
(Growth and Atomic Arrangement of a Single Layer NaCl on Si(100))
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| (Filled state images) Single NaCl atomic island seems apparent for STM tip! | Atomic structure diagram |
(Empty state images) Single NaCl atomic island also seems apparent
in this state!
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Single NaCl atomic layer grown heteroepitaxially on Si(100) surface is just like a “carpet”. |
羅中廷
氯化鈉於鍺表面上的長晶過程
(Atomic Layer Epitaxy of NaCl on Ge Surface)
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| 在鍺(100)表面上，成長各個週期的氯化鈉晶體，Ge 3d、Na 2p核心層光電子圖。 | 在鍺(100)表面上，成長各個週期的氯化鈉晶體，Cl 2p核心層光電子圖。 |
為透過曲線密合技術分析後，光電子譜峰之束縛能位移圖。
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氯化鈉成長於鍺(100)表面過程示意圖。 |
翁靖勳
研究水分子在氯化鈉/鍺(100)表面之化學反應
(Core-Level Photoemission Study of Water exposing on NaCl/Ge(100))
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| (0)乾淨鍺(100)表面；(1)單層氯化鈉於鍺(100)表面；(2)曝18000L水於氯化鈉/鍺(100)表面；(3)通100毫安培於樣品；(4)通300毫安培於樣品。 | (1)單層氯化鈉於鍺(100)；(2)曝18000L水於氯化鈉/鍺(100)表面；(3)通100毫安培於樣品；(4)通300毫安培於樣品。 | X軸的0、1、2、3、4分別於以下所述。(0)乾淨鍺(100)表面；(1)單層氯化鈉於鍺(100)表面；(2)曝18000L水於氯化鈉/鍺(100)表面；(3)通100毫安培於樣品；(4)通300毫安培於樣品。 | X軸的0、1、2、3、4分別於以下所述。(0)乾淨鍺(100)表面；(1)單層氯化鈉於鍺(100)表面；(2)曝18000L水於氯化鈉/鍺(100)表面；(3)通100毫安培於樣品；(4)通300毫安培於樣品。 |
吳曉婷
雙原子分子在半導體表面孤立懸鍵上的吸附研究
(Adsorption of Diatomic Molecules on Adsorption Site)
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探針脫附於Si(100)-2×1表面上 產生的孤立懸鍵 |
曝11.52L
Cl在Si(100)-2×1:H 的吸附情形 |
曝11.52L
Cl在Si(100)-2×1:H的吸附情形 |
結論 |
鄭閔光
矽晶表面上氫和氯原子的換位運動觀察與熱力學研究
(Kinetics of Position Exchange between H and Cl Atomic Sites on a Chlorine terminated Si Surface)
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| Si(100)-2x1:Cl
samples at 570K |
Dynamics
of Movement |
Hopping
rates I – H-exposed set |
Hopping
rates II - non H-exposed set |
楊鎧銘
靜電力對原子力顯微鏡在表面高度量測的影響
(Effect of Electrostatic Forces on the Topographic Height Measurement in Frequency Modulated Atomic Force Microscopy)
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| AFM
Images by different cantilever |
Force
vs. Tip-Sample Distance |
D(U)
and Rel. Force Contribution |
D(U) Data
Fitting and Tip Radius |
黃乾庭
以表面電位顯微鏡觀測金屬-氧化層-半導體能帶
(The Band Structure of Metal-Oxide-Semiconductor Measured by Kelvin Probe Force Microscopy)
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MOS(
p-type Si - SiO2- Ti ) KFM measurements- flat band
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KFM
measurements- accumulation
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KFM
measurements- inverson
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Potional
distribution- CPD vs. distance
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吳依亭
研究原子力顯微鏡對於掃描Z高度量測訊號誤差
(Systematic Error of the Z-Height Measurement in the TappingMode AFM)
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Z height measurement- r= 19 nm PtIr
tip
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Z height measurement- other tips
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Phase measurement- r= 19 nm PtIr tip
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Phase measurement- other tips
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馮世鑫
Growth Behavior of Ge Quantum Dots on Nano-sized Si(111) Strips Bordered the (100) Planes
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Ge dots on (100) planes
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The
formation of well-defined (111) surfaces
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Ge
dots on the (111) planes
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Ge
dots on the negative pyramid
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張君黛
超薄鍺對於氧化矽成長初期的影響
(The Influence of Si Oxidation due to Thin Ge Layers)
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含Ge量對於矽內體分量與矽氧化物的影響
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Si 2p光電子能譜下內體分量與矽氧化物的 面積變化
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Ge 3d光電子能譜譜線合配的結果
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氧化層厚度的計算結果
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邱祺雄
氯化鉀在矽（100）晶面上的原子結構
(The structure of KCl on Si(100) Surface)
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氯化鉀在矽(100)晶面上的生成機制
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氯化鉀在矽(100)晶面上的原子結構
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氯化鉀在矽(100)表面的原子結構模型
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結論
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鄭人夤
氫、氯在矽表面上同時吸附的空間分佈關聯
(Site Correlation of co-adsorbed H and Cl on Si(100)-2x1)
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低溫吸附HCl |
低溫吸附HCl
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高溫吸附HCl
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結論
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林昌廷
H : Si(100)-3x1 to 2x1 表面結構相變化的觀察
(Real-Space Observation of H:Si(100)-3x1 to 2x1 Phase Transition)
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Type A phase transition
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Type B phase transition
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Type C phase transition
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The coverage of 3x1 and 2x1
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謝明峰
氫分子在矽鍺合金表面熱脫附現象之研究
(Hydrogen Molecular Desorption Mechanism from SiGe Alloy Surface)
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利用氯原子吸附來觀察氫原子在矽鍺合金上的熱脫附現象
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XPS的 Cl 2p 光譜圖 | XPS 的 Si 2p 光譜圖 |
XPS 的 Ge 3d 光譜圖
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吳俊偉
氯化鉀離子固體在矽晶上之介面研究
(Formation of an Ultra-thin KCl Layer on the Silicon Surface)
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Si(100) + 0.4-ML-Ge + Cl2 + K(20s)
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Si(100) + 0.4-ML-Ge + Cl2 + K(20s)
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Si(100) + 0.4-ML-Ge + Cl2 + K(15s)
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Si(100) + 0.4-ML-Ge + Cl2 + K(300s)
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Ge原子在Si(100)表面上的成長方式
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Ge原子以隨機換置Si原子的方式在Si(100)表面上成長
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Cl terminated 1.2 ML Ge/Si(100)
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曝氣H2氣體及Cl2氣體在Si(100)-2×1表面上
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曝氣H2氣體及Cl2氣體在Si(100)-2×1表面上
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直接曝氣HCl氣體在Si(100)-2×1表面上
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H與Cl各自聚集
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低溫氧化(775oC)，熱脫附後之STM影像
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高溫氧化(850oC)，熱脫附後之STM影像
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STM & nc-AFM 氧化厚度比較
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氧化厚度與曝氧溫度有關
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