Group Conference Papers


研 究 群 會 議 論 文

[2003] - [2020]

2003

001.“GaAs-based MOSFETs with Al2O3 Gate Dielectrics Grown by Atomic Layer Deposition”, P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, H.-J. L. Gossmann, M. Frei, S. N. G. Chu, S. Nakahara, J. P. Mannaerts, M. Sergent, M. Hong, K. K. Ng, and J. Bude, DRC, June, 2003. 

2004

002.“High k Gate Dielectrics for Si Nano Electronics”, J. Kwo, to appear in the Vacuum Technology, Proceeding of the First Taiwan MBE conference, Kaochiung, April 29-30, 2004.  

003.“MBE Grown High k Gate Dielectrics of HfO2 and (Hf-Al)O2 for Si and III-V Semiconductors Nano-electronics, W. G. Lee, Y. J. Lee, Y. D. Wu, P. Chang, Y. L. Hsu, C. P. Chen, J. P. Mannaerts , S. Maikap, C. W. Liu, L. S. Lee, W. Y. Hsieh, M. J. Tsai, S. Y. Lin, R. L. Lo, M. Hong, and J. Kwo, to appear in the Vacuum Technology, Proceeding of the First Taiwan MBE conference, Kaochiung, April 29-30, 2004. 

004.“Single Crystal g-Al2O3 Films on Si (111), Epitaxial growth, Structural and Electrical Properties”, S. Y. Wu, M. Hong, A.R. Kortan, J. Kwo, and J. P. Mannaerts, to appear in the Vacuum Technology, Proceeding of the First Taiwan MBE conference, Kaochiung, April 29-30, 2004.

005.  “Towards GaAs MOSFET, MBE Growth, MESFET Processing, and Characterization”, P. J. Tsai, Y. W. Chen, H.P. Yang, M. Hong, J. Kwo, J. Chi, and J. P. Mannaerts, to appear in the Vacuum Technology, Proceeding of the First Taiwan MBE conference, Kaochiung, April 29-30, 2004.

006.    “Demonstration of Atomically Abrupt Interface of HfO2 High   k Gate Dielectrics with Si for Nano CMOS”, Wei-Jin Lee, Yi-Jun Li, Ya-Ling Hsu, Kuen-Yu Lee, Chi-Hsin Chu, Chien-Chung Huang, Y. L. Huang, T. Gustafsson, E. Garfunkel, Sidhu Maikap, L. S. Lee, Shi-Yen Lin, Minghwei Hong, and J. Kwo, extended abstract in the proceeding of the Taiwan International Conference on Nano science, June 30-July3, 2004.

007.    “Recent Advances in High k Gate Dielectrics for Nano CMOS”, J. Kwo, extended abstract in the proceeding of the Taiwan International Conference on Nano Science, June 30-July3, 2004.

008.    “Tailoring Oxide-Semiconductor Interfaces – an Enabling Sub-nano Approach for New Science and Advanced Devices”, M. Hong and J. Kwo, extended abstract in the proceeding of the Taiwan International Conference on Nano science, June 30-July 3, 2004.

009.    “MBE Grown HfO2 High k Gate Dielectrics for Si Nano CMOS”, Wei-Jin Lee, Yi-Jun Lee, Chi-Hsin Chu, Kuen Yu Lee,,, Kuo-Liang Chaw, Ya-Ling Hsu, Ching Han Pan, F. R. Chen, T. Gustafsson, E. Garfunkel, S. Maikap, L. S. Lee, M. Hong, and J. Kwo, submitted to Conf. Proc. of IUMRS, 2004, Nov 16-18, 2004, ITRI, Hsin Chu.

010.  “Synthesis of HfO2 High k Gate Dielectrics by Sputter Deposition”, Yen-Dar Wu, Chien-Chung Huang, Yi-Jun Lee, Ya-Ling Hsu, Chi-Hsin Chu, Kuo-Liang Jaw, Wei-Jin Lee, Ching Han Pan, F. R. Chen, T. Gustafsson, E. Garfunkel, Sidhu Maikap, L. S. Lee, Minghwei Hong, and J. Kwo, submitted to Conf. Proc. of IUMRS, 2004, Nov 16-18, 2004, ITRI, Hsin Chu.

011.  “HfO2 and Sc2O3 High Dielectrics for GaAs compound semiconductor Passivation”, Hsiang-Bie Chang, Wei-Jin Lee, Yi-Lin Huang, Chieh-Ping Chen, Yi-Jun Lee, Ya-Ling Hsu, T. Gustafsson, E. Garfunke3, Minghwei Hong, and J. Kwo, submitted to Conf. Proc. of IUMRS, 2004, Nov 16-18, 2004, ITRI, Hsin Chu.

012.  “Towards GaAs MOSFET: MBE Growth, Processing, Characterization, and Analysis”, K. Jaw, P. J. Tsai, Y. W. Chen, H. P. Yang, P. Chang, J. P. Mannearts, J. Chi, J. Kwo, and M. Hong, submitted to Conf. Proc. Of IUMRS, 2004, Nov 16-18, 2004, ITRI, Hsin Chu.

013.  “Structural and Electrical Properties of Ga2O3(Gd2O3)/GaN MOS Diodes”, M. Hong, C. P. Chen, J. Kwo, A. R. Kortan, and J. P. Mannaert, The Annual Taiwan Physics Society Meeting, Tsing Hua University, Hsin Chu, Taiwan, Feb. 9-11, 2004.

014.  “Epitaxial growth and structure of thin single crystal g-Al2O3 films on Si (111) using e-beam evaporation of sapphire in ultra-high vacuum”, M. Hong, A. R. Kortan, J. Kwo, J. P. Mannaerts, and S. Y. Wu, Materials Research Society (MRS) Spring Meeting, April 12-16, 2004, San Francisco, CA.

015.  “Structure of Sc2O3 films epitaxially grown on a-Al2O3 (111)”, A. Kortan, M. Hong, J. Kwo, C. P. Chen, J. P. Mannaerts, and S. H. Liou, Materials Research Society (MRS) Spring Meeting, April 12-16, 2004, San Francisco, CA.

016.  “Fundamental study and oxide reliability of the MBE grown Ga2-xGdxO3 dielectrics for compound semiconductor MOSFET’s”, J. Kwo, M. Hong, J. P. Mannaerts, Y. D. Wu, Q. Y. Lee, B. Yang, and T. Gustafsson, Materials Research Society (MRS) Spring Meeting, April 12-16, 2004, San Francisco, CA.

017.  “Single crystal g-Al2O3 films on Si (111) – Epitaxial growth, structural, and electrical properties”, S. Y. Wu, M. Hong, A. R. Kortan, J. Kwo, J. P. Mannaerts, MBE Taiwan, the 1st Taiwan MBE Workshop, National Sun Yat-sen University, Kaohsiung, Taiwan, April 29-30, 2004.

018.  “Towards GaAs MOSFET – MBE Growth, MESFET processing, and characterization”, P. J. Tsai, Y. W. Chen, H. P. Yang, P. Chang, M. Hong, J. Kwo, J. Chi, and J. P. Mannaerts, MBE Taiwan, the 1st Taiwan MBE Workshop, National Sun Yat-sen University, Kaohsiung, Taiwan, April 29-30, 2004.

019.  “MBE grown high-k gate dielectrics of HfO2 and (Hf,Al)O2 for Si and III-V semiconductors nano-electronics”, W. G. Lee, Y. J. Lee, Y. D. Wu, P. Chang, Y. L. Hsu, C. P. Chen, J. P. Mannaerts, S. Maikap, C. W. Liu, L. S. Lee, W. Y. Hsieh, M. J. Tsai, S. Y. Lin, R. L. Lo, M. Hong, and J. Kwo, MBE Taiwan, the 1st Taiwan MBE Workshop, National Sun Yat-sen University, Kaohsiung, Taiwan, April 29-30, 2004.

020.  Demonstration of atomically abrupt interface of HfO2 high-k gate dielectrics with Si for nano CMOS”, Wei-Jin Lee, Yi-Jun Lee, Ya-Ling Hsu, Kuen-Yu Lee, Chi-Hsin Chu, Chien-Chung Huang, Y. L. Huang, T. Gustafsson, E. Garfunkel, Sidhu Maikap, L. S. Lee, Shi-Yen Lin, Minghwei Hong, and J. Raynien Kwo, Taiwan International Conference on Nano Science and Technology, (TICON 2004), Center for Nano-Science and Technology, University System of Taiwan, National Tsing Hua University, Hsin Chu, Taiwan, June 30 to July 3, 2004.

021.  Towards GaAs MOSFET: MBE Growth, Processing, Characterization, and Analysis”, K. Jaw, P. J. Tsai, Y. W. Chen, H. P. Yang, P. Chang, M. Hong, J. Kwo, J. Chi, and J. P. Mannearts, Taiwan International Conference on Nano Science and Technology, (TICON 2004), Center for Nano-Science and Technology, University System of Taiwan, National Tsing Hua University, Hsin Chu, Taiwan, June 30 to July 3, 2004.

022.  “Epitaxial growth and structure of thin single crystal Sc2O3 films on Si (111)”, C. P. Chen, M. Hong, J. Kwo, H. M. Cheng, Y. L. Huang, S. Y. Lin, J. Chi, H. Y. Lee, Y. F. Hsieh, and J. P. Mannaerts, International Conference on MBE, August 23-27, 2004 and the paper will be published in J. Crystal Growth.

023.  “MBE Grown High k Gate Dielectrics of HfO2 and (Hf-Al)O2 for Si and III-V Semiconductors Nano-electronics”, W. G. Lee, Y. J. Lee, Y. D. Wu, P. Chang, Y. L. Hsu, C. P. Chen, J. P. Mannaerts , S. Maikap, C. W. Liu, L. S. Lee, W. Y. Hsieh, M. J. Tsai, S. Y. Lin, R.L. Lo, M. Hong, and J. Kwo, International Conference on MBE, August 23-27, 2004 and the paper will be published in J. Crystal Growth.

024.  “Depth-profile study of the electronic structures at Ga2O3(Gd2O3)- and Gd2O3-GaN interfaces by x-ray photoelectron spectroscopy”, T. S. Lay, Y. Y. Liao, W. H. Hung, M. Hong, and J. Kwo, International Conference on MBE, August 23-27, 2004 and the paper will be published in J. Crystal Growth.

025.  “Depth-profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy”, T. S. Lay, S. C. Chang, C. C. Yeh, W. H. Hung, J. Kwo and M. Hong, NAMBE 2004 – 22nd North American MBE conference – Banff, Alberta, Canada October 11-13, 2004.

026.  “HfO2 and Sc2O3 high k dielectrics for GaAs compound semiconductor passivation”, H-B. Chang, W-J. Lee, Y-L. Huang, C-P. Chen, Y-J. Lee, Y-L. Hsu, T. Gastafsson, E. Garfunkel, M. Hong, and J. Kwo, IUMRS-ICA-2004 (International Conference in Asia), Industrial Technology Research Institute, November 16-18, 2004.

027.  “MBE grown HfO2 high k gate dielectrics for Si nano CMOS”, W-J. Lee, Y-J. Lee, K-Y. Lee, C-H. Chu, K-L. Jaw, Y-L. Hsu, C-H. Pan, F. R. Chen, T. Gastafsson, E. Garfunkel, S. Maikap, L. S. Lee, M. Hong, and J. Kwo, IUMRS-ICA-2004 (International Conference in Asia), Industrial Technology Research Institute, November 16-18, 2004.

028.  “Synthesis of HfO2 high k gate dielectrics by sputter deposition”, Y. D. Wu, C. C. Huang, Y-J. Lee, Y-L. Hsu, C-H. Chu, K-L. Jaw, W-J. Lee, C-H. Pan, F. R. Chen, T. Gastafsson, E. Garfunkel, S. Maikap, L. S. Lee, M. Hong, and J. Kwo, IUMRS-ICA-2004 (International Conference in Asia), Industrial Technology Research Institute, November 16-18, 2004.

029.  “GaAs-based MOSFET: growth, device processing, characterization, and analysis”, Y. W. Chen, K. Jaw, P. J. Tsai, H. P. Yang, H-B. Chang, J. Kwo, J. Chi, J. P. Mannaerts, and M. Hong, IUMRS-ICA-2004 (International Conference in Asia), Industrial Technology Research Institute, November 16-18, 2004.

030.  “Interfacial roughness between oxide and GaAs studied by x-ray reflectivity”, Y. L. Huang, H-B. Chang, C. P. Chen, H. Y. Lee, H. J. Liu, J. Kwo, and M. Hong, IUMRS-ICA-2004 (International Conference in Asia), Industrial Technology Research Institute, November 16-18, 2004.

031.  “Thin single crystal g-Al2O3 films on Si (111) – epitaxial growth, structures, and electrical characteristics”, S. Y. Wu, W-J. Lee, Y. L. Huang, Y-J. Lee, Y-L. Hsu, Y. F. Hsieh, S. Gwo, J. Kwo, A. R. Kortan, J. P. Mannaerts, and M. Hong, IUMRS-ICA-2004 (International Conference in Asia), Industrial Technology Research Institute, November 16-18, 2004.

032.  “MBE grown HfO2 gate dielectrics for Si Nano CMOS and III-V semiconductor MOSFETs”, J. Kwo, M. Hong, J. P. Mannaerts, W. J. Lee, H. P. Chang, Y. J. Lee, C. H. Chu, K. L. Jaw, Y. L. Hsu, K. Y. Lee, C. H. Pan, C. C. Huang, Y. L. Huang, T. Gustafsson, and E. Garfunkel, Materials Research Society (MRS) Fall Meeting, November 29 – December 3, 2004, Boston, MA.

033.  “MBE Growth and Characterization of High-Quality Single Crystal Sc2O3 Films on Si (111)”, M. Hong, H. Y. Lee, A. R. Kortan, J. Kwo, C. P. Chen, Y. F. Hsieh, H.-M. Cheng, Y. L. Hwang, and J. P. Mannaerts, Materials Research Society (MRS) Fall Meeting, November 29 – December 3, 2004, Boston, MA.

2005

034.   “Epitaxial growth of half metal thin films on GaAs(100) for spin injection”, Y. L. Hsu, P. Chang, Y. H. Chiu, Y. L. Huang, M. L. Huang, W. G. Lee, Y. P. Lin, M. Hong, and J. Kwo, The Annual Taiwan Physics Society Meeting, National Sun Yat-Sen University, Kaohsiung, Taiwan, Feb. 1-3, 2005.

035.   “The thermal stability of High k Dielectrics TiN/HfO2/Si Gate Stack for Nano CMOS”, C. S. Chu, W. J. Lee, K. L. Jaw, K. Y. Lee, C. H. Pan, M. Hong, and J. Kwo, The Annual Taiwan Physics Society Meeting, National Sun Yat-Sen University, Kaohsiung, Taiwan, Feb. 1-3, 2005.

036.   “Structural and Electrical Characteristics of High k Gate Dielectrics HfO2 thin films”, Y. J. Lee, W. J. Lee, Y. L. Huang, K. Y. Lee, C. H. Pan, Y. L. Hsu, R.L. Lo, T. Gustafsson, E. Garfunkel, M. Hong, and J. Kwo, The Annual Taiwan Physics Society Meeting, National Sun Yat-Sen University, Kaohsiung, Taiwan, Feb. 1-3, 2005.

037.   “Depletion mode n-channel InGaAs/GaAs MOSFET, device processing and characterization”, K. Jaw, P. J. Tsai, Y. W. Chen, H. P. Yang, P. Chang, J. Kwo, J. Chi, and M. Hong, The Annual Taiwan Physics Society Meeting, National Sun Yat-Sen University, Kaohsiung, Taiwan, Feb. 1-3, 2005.

038.   “Sc2O3/Si(111) interfacial chemistry studied by synchrotron radiation based x-ray photoelectron spectroscopy”, M.-L. Huang (黃懋霖), C.-H. Chen (陳家浩), S.-C. Wang (王世杰), P. Chang (張翔筆), C. P. Chen(陳治平), C. H. Wu(吳佳慧), Y. S. Chang(張宇行), J. Kwo (郭端年), and M. Hong (洪銘輝), The Annual Taiwan Physics Society Meeting, National Sun Yat-Sen University, Kaohsiung, Taiwan, Feb. 1-3, 2005. 獲得"年會壁報論文獎",此獎項為全部五百多篇posters不分sessions選出十多篇獲獎之一

039.   “Epitaxial growth of half metal thin films on GaAs(100) for spin injection”, Y. L. Hsu, P. Chang, Y. H. Chiu, Y. L. Huang, M. L. Huang, Y. J. Lee, K. Y. Lee, W. G. Lee, Y. Lin, M. Hong, and J. Kwo, The American Physical Society March Meeting, Los Angeles, CA, March 21-26, 2005.

040.   “Thin single crystal Sc2O3 Films on Si (111) with very sharp interface”, M. Hong, H. Y. Lee, A. R. Kortan, J. Kwo, P. Chang, Y. L. Huang, C. P. Chen, The American Physical Society March Meeting, Los Angeles, CA, March 21-26, 2005.

041.   “Depletion mode n-channel InGaAs/GaAs MOSFET using Ga2O3(Gd2O3) as a gate dielectric”, K. Jaw, Y. Chen, P. Tsai, H. P. Yang, P. Chang, J. Kwo, J. Chi, and M. Hong, Material Research Society Spring Meeting, San Francisco, CA, March 28 – April 1, 2005.

042.   “HfO2 high k dielectrics for GaAs compound semiconductor passivation”, P. Chang, W. C. Lee, Y. L. Huang, Y. J. Lee, Z. K. Yang, M. Hong, and J. Kwo, Material Research Society Spring Meeting, San Francisco, CA, March 28 – April 1, 2005.

043.   “Temperature annealed Ga2O3(Gd2O3)/GaAs heterostructures”, Y. L. Huang, P. Chang, Z. K. Yang, Y. J. Lee, H. Y. Lee, H. J. Liu, J. Kwo, J. P. Mannaerts, and M. Hong, Material Research Society Spring Meeting, San Francisco, CA, March 28 – April 1, 2005.

044.   “Interfacial study of high k dielectrics TiN/HfO2/Si gate stack for nano CMOS”, W. C. Lee, C. H. Chu, Y. J. Lee, K. Jaw, K. Y. Lee, C. H. Pan, Y. L. Hsu, P. Chang, Y. L. Huang, T. Gustafsson, E. Garfunkel, M. Hong, and J. Kwo, Material Research Society Spring Meeting, San Francisco, CA, March 28 – April 1, 2005.

045.   “Depletion-mode InGaAs/GaAs MOSFET with oxide passivated by amorphous Si”, P. J. Tsai, U. N. Chiu, L. K. Chu, Y. W. Chen, H. P. Yang, P. Chang, J. Kwo, J. Chi, and M. Hong, MBE Taiwan 2005, May 19-20, Hsinchu, Taiwan.

046.   “Growth rate effects on InGaAs/GaAs quantum dots”, C. Y. Huang, T. M. Ou, W. T. Chang, M. C. Wu, J. J. Shen, C. Y. Liang, S. Y. Lin, P. Chang, T. D. Lin, M. Hong, J. Kwo, and J. Chi, MBE Taiwan 2005, May 19-20, Hsinchu, Taiwan.

047.   “Interface study of MBE-grown novel oxide/semiconductor heterostructures”, Y. J. Lee, W. C. Lee, P. Chang, Y. L. Huang, J. P. Mannaerts, M. Hong, and J. Kwo, MBE Taiwan 2005, May 19-20, Hsinchu, Taiwan. (This paper was selected as the 2nd price among the student papers (42 totals) presented at the conference.)

048.   “Epitaxial magnetic films of Fe3Si/GaAs heterostructures for spintronics”, Y. L. Hsu, P. Chang, Y. H. Chiu, J. P. Mannaerts, Y. L. Huang, Z. K. Yang, Y. J. Lee, M. L. Huang, W. G. Lee, F. C. Hsu, R. L. Lo, C. D. Chen, Y. Lin, M. Hong, and J. Kwo, MBE Taiwan 2005, May 19-20, Hsinchu, Taiwan.

049.   “Ga2O3(Gd2O3)/Si (100) heterostructures grown by molecular beam epitaxy”, T. D. Lin, P. Chang, T. H. Chiang, C. W. Nieh, J. Kwo, and M. Hong, MBE Taiwan 2005, May 19-20, Hsinchu, Taiwan.

050.   “Thermodynamic stability of Ga2O3(Gd2O3)/GaAs heterostructures”, Z. K. Yang, Y. L. Huang, P. Chang, Y. J. Lee, H. Y. Lee, H. J. Liu, J. Kwo, T. S. Lay, and M. Hong, MBE Taiwan 2005, May 19-20, Hsinchu, Taiwan.

051.   “The electrical characteristics of high k MOSFET with MBE-grown HfO2 gate oxide and TiN metal gate”, C. S. Chiu, K. L. Jaw, W. G. Lee, Y. L. Huang, C. H. Pan, M. Hong, and J. Kwo, MBE Taiwan 2005, May 19-20, Hsinchu, Taiwan.

052.   “Studies of MBE grown hetero-structures using x-ray reflectivity”, Z. K. Yang, Y. H. Chang, M. H. Fu, Y. L. Huang, P. Chang, H. Y. Lee, H. J. Liu, J. Kwo, and M. Hong, MBE Taiwan 2005, May 19-20, Hsinchu, Taiwan.

053.   Depletion-mode GaAs-based MOSFET with Ga2O3(Gd2O3) as a gate dielectric”, L. K. Chu, P. J. Tsai, U. N.Chiu, Y. W. Chen, H. P. Yang, P. Chang, J. Kwo, J. Chi, and M. Hong, 2005奈米國家型科技計畫成果發表會, 9/21-23, 2005, 國際會議中心, Taipei, Taiwan.

054.   “Surface passivation of III-V compound semiconductors using atomic-layer-deposition grown Al2O3”,  M. L. Huang, Y. C. Chang, C. H. Chang, Y. J. Lee, P. Chang, J. Kwo, T. B. Wu and M. Hong, 2005奈米國家型科技計畫成果發表會, 9/21-23, 2005, 國際會議中心, Taipei, Taiwan.

055.   “MBE grown high k Ga2O3(Gd2O3) gate dielectrics for Si nano-electronic”, T. D. Lin, P. Chang, W. J. Lee, Z. K. Yang, H. T. Lee, J. Kwo, and M. Hong, 2005奈米國家型科技計畫成果發表會, 9/21-23, 2005, 國際會議中心, Taipei, Taiwan.

056.   “High-Quality Nano-Thickness Single Crystal Sc2O3 film Grown on Si (111)”, C. P. Chen, A. R. Kortan, P. Chang, Y. L. Huang, H. Y. Lee, J. Kwo,  M. W. Chu, C. H. Chen, L. Goncharova, E. Garfunkel, and T. Gustafsson, and M. Hong, 2005奈米國家型科技計畫成果發表會, 9/21-23, 2005, 國際會議中心, Taipei, Taiwan.

057.   “Gamma phase nano single crystal Al2O3 on Si(111)”, S. Y. Wu, W. C. Lee , Y. L. Huang, J. P. Mannaerts, A. R. Kortan, J. Kwo, C. H. Hsu, and M. Hong, 2005奈米國家型科技計畫成果發表會, 9/21-23, 2005, 國際會議中心, Taipei, Taiwan.

058.   Thermodynamic stability of Ga2O3 (Gd2O3)/GaAs interface”, Z. K. Yang, Y. L. Huang, P. Chang, Y. J. Lee, H. Y. Lee, H. J. Liu, J. Kwo, J. P. Mannaerts, and M. Hong, 2005奈米國家型科技計畫成果發表會, 9/21-23, 2005, 國際會議中心, Taipei, Taiwan.

059.   “The electrical characteristics of high-К MOSFET with MBE-grown HfO2 gate oxide and TiN metal gate”, C. H. Pan, C. S. Chu, K. L. Jaw, W C. Lee, Y. J. Lee ,Z. K. Yang, Y. L. Huang, M. Hong, and J. Kwo, 2005奈米國家型科技計畫成果發表會, 9/21-23, 2005, 國際會議中心, Taipei, Taiwan.

060.   “High k dielectric HfO2 films and interfaces deposited by molecular beam epitaxy and sputtering”, W. C. Lee, Y. D. Wu, Y. J. Lee, Kuen-Yu Lee, J. P. Mannaerts, F. R. Chen, Lyudmila Goncharova, T. Gustafsson, E.Garfunkel,  M. Hong, and J. Kwo, 2005奈米國家型科技計畫成果發表會, 9/21-23, 2005, 國際會議中心, Taipei, Taiwan.

061.   “Hafnium Oxide for Advanced Gate Dielectrics on Compound Semiconductor Grown by MBE”, P. Chang, Z. K. Yang, Y. J. Lee, W. G. Lee, C. M. Huang, C. H. Hsu, M. Hong, and J. Kwo, 2005奈米國家型科技計畫成果發表會, 9/21-23, 2005, 國際會議中心, Taipei, Taiwan.

062.   “High-quality thin single crystal Sc2O3 films grown on Si (111)”, C. P. Chen, M. Hong, A. R. Kortan, P. Chang, Y. L. Huang, H. Y. Lee, J. Kwo, M. W. Chu, C. H. Chen, L. Goncharova, E. Garfunkel, and T. Gustafsson, annual users meeting, the National Synchrotron Radiation Research Center, Hsin Chu, October 25, 26, 2005. (佳作 out of 180 posters)

063.   “Structural Study of MBE-Grown Nano-Thick HfO2/GaAs Heterostructures”, Z. K.Yang, P. Chang, C. M. Huang, C.-H. Hsu, J. Kwo, and M. Hong, annual users meeting, the National Synchrotron Radiation Research Center, Hsin Chu, October 25, 26, 2005. (2nd place in the competition, out of 180 posters)

064.   “Structural Characteristics of MBE-Grown Y2O3 Film on Si (111)”, C.-W. Nieh, W.-G. Lee, Z.-K. Yang, Y.-J. Lee, P. Chang, T.-D. Lin, J. Kwo, C. H. Hsu, and M. Hong, annual users meeting, the National Synchrotron Radiation Research Center, Hsin Chu, October 25, 26, 2005. (佳作out of 180 posters)

065.   “Structural Characteristics of Fe3Si Epitaxial Magnetic Films on GaAs (001)”, Y. L. Hsu, Z. K. Yang, M. C. Hang, C. H. Hsu, M. Hong,  and J. Kwo, annual users meeting, the National Synchrotron Radiation Research Center, Hsin Chu, October 25, 26, 2005. (佳作out of 180 posters)

066.   “Gamma phase nano thick single crystal Al2O3 on Si (111)”, S.-Y. Wu, C.-H. Hsu, A. R. Kortan, J. Kwo, W. C. Lee, J. P. Mannaerts, Y. L. Huang, and M. Hong, annual users meeting, the National Synchrotron Radiation Research Center, Hsin Chu, October 25, 26, 2005. (佳作out of 180 posters)

067.   “Incorporation of Co into the HfO2 layer grown on Si(100) by electron beam co-deposition”, S. J. Chang, W. C. Lee, J. Hwang, M. Hong, and J. Kwo, 2005 Annual conference for surface coating and technology, Taiwan. 12月的台灣鍍膜協會辦的研討會.

2006

068.   “Structural and Magnetic Characteristics of Fe3Si Epitaxial Films on GaAs (001)”, Y. L. Hsu, W. Chang, C. H. Hsu, H. H. Hung, M. Hong and J. Kwo, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Taiwan University, Jan. 16-18, 2006. (the best poster paper in the field of magnetism)

069.    “Electrical and Structural Characteristics of High-k Dielectrics on Si(100), and MBE-grown Template by Sputtering.”, Y. D. Wu, W. C. Lee, Y. J. Lee, M. C. Hang, M. Hong, and J. Kwo, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Taiwan University, Jan. 16-18, 2006.

070.    “Structural Characteristics of MBE-Grown Y2O3 Film on Si (111)”, C.-W. Nieh, W.-C. Lee, Z.-K. Yang, Y.-J. Lee, P. Chang, T.-D. Lin, J. Kwo, C. H. Hsu and M. Hong, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Taiwan University, Jan. 16-18, 2006.

071.    “Surface passivation of III-V compound semiconductors using atomic-layer- deposition grown Al2O3, M. L. Huang, M. Hong, Y. C. Chang, C. H. Chang, Y. J. Lee, P. Chang, T. B. Wu, and J. Kwo, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Taiwan University, Jan. 16-18, 2006.

072.    “Magnetic Properties of Co-doped HfO2, M. C. Hang, Y. S. Chang, W. C. Lee, M. L. Huang, Z. K. Yang, S. F. Lee, L. Goncharova, T. Gustafsson, Y. L. Soo, C. H. Hsu, M. Hong, and J. Kwo, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Taiwan University, Jan. 16-18, 2006.

073.    “Structure of epitaxial Ga2O3(Gd2O3) films grown on Si(111)”, T. D. Lin, M. C. Hang, P. Chang, W. C. Lee, Z. K. Yang, C. H. Hsu, J. Kwo, and M. Hong, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Taiwan University, Jan. 16-18, 2006.

074.    “Electrical characteristics of High-k MOSCAP and MOSFET devices with MBE-grown HfO2 gate oxide and TiN metal gate”, C. H. Pan, W. C. Lee, K. L. Jaw, C. P. Chen, K. Y. Lee, Y. J. Lee, Z. K. Yang, Y. N. Chiou, M.C. Wu, M. Hong, and J. Kwo, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Taiwan University, Jan. 16-18, 2006.

075.    “Structural Study of MBE-Grown HfO2 on GaAs Heterostructures.”, Z. K. Yang, P. Chang, W. C. Lee, C. M. Huang, C.-H. Hsu, M. Hong, and J. Kwo, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Taiwan University, Jan. 16-18, 2006. (the best poster paper in the field of Semiconductors).

076.    A Novel Template Approach by MBE for ALD Growth of High k Dielectrics”, K. Y. Lee, W. C. Lee, M. L. Huang, Y. C. Lee, C. H. Chang, Y. K. Chiou, M. Hong, and J. Kwo, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Taiwan University, Jan. 16-18, 2006.

077.    “Magnetic Properties of Co-doped HfO2, Y. S. Chang, W. C. Lee, M. C. Hang, M. L. Huang, Z. K. Yang, S. F. Lee, L. Goncharova, T. Gustafsson, Y. L. Soo, M. Hong, J. Kwo, APS March Meeting 2006, March 13-17, 2006.

078.    Surface passivation of III-V compound semiconductors using atomic-layer-deposition grown Al2O3, M. L. Huang, M. Hong, Y. C. Chang, C. H. Chang, Y. J. Lee, P. Chang, and T. B. Wu, J. Kwo, APS March Meeting 2006, March 13-17, 2006.

079.    “High-quality Thin Single-Crystal Y2O3 films Grown on Si (111)”, C.-W. Nieh, W.-C. Lee, Z.-K. Yang, Y.-J. Lee, P. Chang, T.-D. Lin, M. Hong, J. Kwo, and C. H. Hsu, APS March Meeting 2006, March 13-17, 2006.

080.    “Cubic HfO2 Doped with Y2O3 for Advanced Gate Dielectrics by MBE”, Z. K. Yang, W. C. Lee, P. Chang, M. L. Huang, Y. L. Huang, M. Hong, C. M. Huang, C. H. Hsu, and J. Kwo, APS March Meeting 2006, March 13-17, 2006.

081.    A Novel Template Approach by MBE for ALD Growth of High k Dielectrics”, K. Y. Lee, W. C. Lee, M. L. Huang, Y. C. Lee, C. H. Chang, Y. K. Chiou, M. Hong, and J. Kwo, APS March Meeting 2006, March 13-17, 2006.

082.    “Local environment surrounding Co in MBE-grown HfO2: Co thin films probed by EXAFS and XMCD”, Y. L. Soo, M. Hong, J. Kwo et al, APS March Meeting 2006, March 13-17, 2006.

083.    “Local valence structure of Fe in Fe3Si/GaAs (100)”, K. L. Yu, M. Hong, J. Kwo et al, APS March Meeting 2006, March 13-17, 2006.

084.    Measuring and Modeling the Scaling Trend of the RF Noise in MOSFETs”, H. L. Kao, Albert Chin, C. C. Liao, Sean P. McAlister, J. Kwo, and M. Hong, Device Research Conference, Pennsylvania State University, Pennsylvania, USA, June 26-28, 2006..

085.    “Very Low Voltage SiO2/HfON/HfAlO/TaN Memory with Fast Speed and Good Retention”, C. H. Lai, A. Chin, H. L. Kao, K. M. Chen, M. Hong, J. Kwo and C. C. Chi, Symposia on VLSI Technology and Circuits, Hilton Hawaiian Village, Honolulu, Hawaii, USA, June 13-17, 2006.

086.    “High Performance Micro-Crystallized TaN/SrTiO3/TaN Capacitors for Analog and RF Applications”, K. C. Chiang, C. C. Huang, A. Chin, W. J. Chen, H. L. Kao, M. Hong, and J. Kwo, Symposia on VLSI Technology and Circuits, Hilton Hawaiian Village, Honolulu, Hawaii, USA, June 13-17, 2006.

087.    “Structural Investigation of Epitaxial HfO2 Films by X-ray Scattering”, C. H. Hsu, Z. K. Yang, P. Chang, J. Kwo, M. Hong, Chih-Mao Huang, and Hsin-Yi Lee, 5th International Conference on Synchrotron Radiation in Materials Science, Chicago, July 30 – August 2, 2006.

088.    “A Novel Template Approach by MBE for ALD Growth of High k Dielectrics”, K. Y. Lee(李昆育), W. C. Lee, C. H. Chung, Y. K. Chiou, M.L. Hung, Y. J. Lee and M. Hong, and J. Kwo, MBE Taiwan 2006 & High-K Materials Workshop, June 1-3,2006. selected as the second best student poster award

089.    “Structural and Magnetic Characteristics of Epitaxial Fe3Si/GaAs Heterostructures”, Y. L. Hsu(徐雅玲), M. L. Huang, W. Chang, C. H. Hsu, M. Hong and J. Kwo, MBE Taiwan 2006 & High-K Materials Workshop, June 1-3,2006, the best student poster award.

090.    “Analysis of Yttrium-doped and Pure Hafnium Oxide High κ Dielectric Thin Films on GaAs”, W. C. Lee (李威縉), Y. J. Lee(李毅君), Z. K. Yang(楊智凱), P. Chang(張翔筆), M.L. Huang(黃懋霖), S. C. Liou(劉思謙), C. H. Hsu(徐嘉鴻), M. Hong(洪銘輝), and J. Kwo (郭瑞年), MBE Taiwan 2006 & High-K Materials Workshop, June 1-3,2006.

091.    “Grown Ga2O3(Gd2O3) thin film of cubic phase on Si(111) by molecular beam epitaxy”, M. C. Hang, T. D. Lin, Z. K. Yang, H. Niu, C. H. Hsu, J. Kwo, and M. Hong, MBE Taiwan 2006 & High-K Materials Workshop, June 1-3, 2006.

092.    “Structure Characteristics and Strain Relaxation Behavior of Ultrathin Y2O3 Films Epitaxially Grown on Si(111)”, C. W. Nieh, W. C. Lee, Y. J. Lee, Z. K. Yang, J. Kwo, C. H. Hsu and M. Hong, MBE Taiwan 2006 & High-k Materials Workshop, June 1-3,2006.

093.    “Inelastic Electron Tunneling Spectroscopy Study on MBE-grown HfO2 Metal-Oxide-Semiconductor System”, C.C. Huang (黃建中), H. C. Ho, Y. D. Wu, W. C. Lee, M. Hong, and J. Kwo, MBE Taiwan 2006 & High-K Materials Workshop, June 1-3,2006.

094.    “The Improvement of Interfacial and Electrical Properties for Sputtered Ti-doped HfO2 by Using a MBE-Grown Template”, Y. D. Wu(吳彥達), Y. J. Lee, W. C. Lee, M. L. Huang, H. C. Chiu, M. Hong, J. Kwo, MBE Taiwan 2006 & High-K Materials Workshop, June 1-3,2006.

095.    “Electrical characteristics of High-k MOSCAP and MOSFET devices with MBE-grown HfO2 gate oxide and TiN metal gate” C. H. Pan, W. C. Lee, C. S. Chiou, C. P. Chen, K. Y. Lee, Y. J. Lee, Z. K. Yang, Y. N. Chiou, M. Hong, and J. Kwo, MBE Taiwan 2006 & High-K Materials Workshop, June 1-3,2006.

096.    “Characteristics of initial growth of Ga2O3(Gd2O3) on GaAs”, M. L. Huang, T. D. Lin, W. C. Lee, T. H. Chiang, J. Kwo, and M. Hong, MBE Taiwan 2006 & High-K Materials Workshop, June 1-3,2006.

097.    “Interfacial characteristics of high-quality single-crystal Sc2O3 grown on Si(111)”, H. Y. Chou, P. Chang, Z. K. Yang, M. L. Huang, J. Kwo, and M. Hong, MBE Taiwan 2006 & High-K Materials Workshop, June 1-3,2006.

098.    “Electric spin injection in GaAs/AlGaAs Quantum well LEDs”, Y. N. Chiu, C. C. Ho, P. Chang, H. P. Yang, M. Hong, and J. Kwo, MBE Taiwan 2006 & High-K Materials Workshop, June 1-3,2006.

099.    “Magnetic Properties of MBE Grown Cobalt Doped HfO2, Y. H. Chang, W. C. Lee, Y. L. Soo, Y. J. Lee, M. C. Hang, Z. K. Yang, S. F. Lee, J. Kwo, and M. Hong, MBE Taiwan 2006 & High-k Materials Workshop, June 1-3,2006.

100.  “Determination of Spin Polarization of Ferromagnetic Fe3Si Epitaxial Films by Point-Contact Andreev Reflection”, Y. H. Chiu, T. W. Chiang, S. Y. Huang, Y. L. Hsu, S. F. Lee, and J. Kwo, Taiwan Annual Magnetism and Magnetic Technology Conference, National Taiwan Univ., Taipei, June 28-30, 2006, selected as the best Student Poster Award.

101.  “Structural properties of yttrium-doped and pure hafnium oxide high k dielectric thin films on GaAs”, Y. J. Lee, Z. K. Yang, W. C. Lee, P. Chang, S. C. Liou, M. W. Chu, C. H. Chen, M. Hong, and J. Kwo, 14th International Conference on Molecular Beam Epitaxy (MBE2006), September 3-8, 2006.

102.  “Structural, Magnetic properties, and Spin LED of Epitaxial Fe3Si/GaAs Heterostructures”, Y. L. Hsu, M. L. Huang, Y. N. Chiu, C. C. Ho, P. Chang, C. H. Hsu, M. Hong and J. Kwo, 14th International Conference on Molecular Beam Epitaxy (MBE2006), September 3-8, 2006.

103.  “MBE Grown High-Quality Gd2O3/ Si (111) Heterostructure”, T. D. Lin, M. C. Hang, P. Chang, W. C. Lee, Z. K. Yang, H. Niu, C. H. Hsu, J. Kwo, and M. Hong, 14th International Conference on Molecular Beam Epitaxy (MBE2006), September 3-8, 2006.

104.  “Probing the initial growth of Ga2O3(Gd2O3) on GaAs using in situ X-ray photoelectron spectroscopy”, M. L. Huang, T. D. Lin, W. C. Lee, J. Kwo, and M. Hong, 14th International Conference on Molecular Beam Epitaxy (MBE2006), September 3-8, 2006.

105.  “Cubic phase HfO2 Epitaxially grown by MBE”, Z. K. Yang, W. C. Lee, P. Chang, M.L. Huang, Y. L. Huang, C. M. Huang, C. H. Hsu, M. Hong, and J. Kwo, 14th International Conference on Molecular Beam Epitaxy (MBE2006), September 3-8, 2006.

106.  “Depletion mode GaAs-based MOSFET with Ga2O3(Gd2O3) as a gate dielectric”, P. J. Tsai, L. K. Chu, Y. W. Chen, U. N. Chiu, H. P. Yang, P. Chang, J. Kwo, J. Chi, and M. Hong, 14th International Conference on Molecular Beam Epitaxy (MBE2006), September 3-8, 2006.

107.  “MBE grown high κ dielectrics of Ga2O3(Gd2O3) for GaN”, Y. C. Chang, Y. N. Chiu, S. Y. Wu, H. C. Chiu, P. Chang, Y. J. Lee, J. Kwo, Y. H. Wang, and M. Hong, 14th International Conference on Molecular Beam Epitaxy (MBE2006), September 3-8, 2006.

108.  “Cubic Phase HfO2 Epitaxial Thin films Grown by MBE”, Z. K. Yang(楊智凱), W. C. Lee(李威縉), Y. J. Lee(李毅君), Y. H. Chang(張宇行), C.H. Lee(李奇勳), K. L. Yu(于冠禮), C. -H. Hsu(徐嘉鴻), M.T. Tang(湯茂竹), M. Hong(洪銘輝), and J. Kwo(郭瑞年), NSRRC Annual User Meeting, Sep 27-28, 2006, NSRRC, Hsin Chu, Taiwan. 中心用戶年會報告摘要, selected as the Third best poster award.

2007

109.  “MBE and ALD grown High κ Gate Dielectrics on GaN”, H.C. Chiu (邱漢欽), Y. C. Chang (張耀中), K. Y. Lee (李昆育), W. C. Lee (李威縉), T. D. Lin (林宗達), Y. J. Lee (李毅君) , M. L. Huang (黃懋霖), M. Hong (洪銘輝), J. Kwo (郭瑞年) and Y. H. Wang (王永和), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Central University, Jan. 23-25, 2007.

110.  “High-κ dielectrics on germanium MOS - XPS and electrical studies”, C. H. Lee(李奇勳), M. L. Huang(黃懋霖), K. Y. Lee(李昆育), W. C. Lee(李威縉), T. D. Lin(林宗達), Y. J. Lee(李毅君), M. Hong(洪銘輝), and J. Kwo(郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Central University, Jan. 23-25, 2007.

111.  Determination of Spin Polarization of Ferromagnetic Fe3Si epitaxial Films by Point-Contact Andreev Reflection”, Y. H. Chiu(邱亦欣), T. W. Chiang(江典蔚), S. Y. Huang(黃斯衍), Y. L. Hsu(徐雅玲), S. F. Lee(李尚凡), M. Hong(洪銘輝) and J. Kwo(郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Central University, Jan. 23-25, 2007.

112.  “MOS Ge Diodes Based on High k Gate Dielectrics Grown by MBE and ALD”,K. Y. Lee(李昆育), W. C. Lee, T. D. Lin, C. H. Lee, Y. C. Chang, Y. J. Lee, M. L. Huang, Y. D. Wu, M. Hong, J. Kwo, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Central University, Jan. 23-25, 2007.

113.  The mechanism of Fermi level pinning/unpinning at high κ Oxide/GaAs interface”, M. L. Huang (黃懋霖), W. C. Lee (李威縉) , P. Chang (張翔筆) , T. D. Lin (林宗達), Y. J. Lee (李毅君), and M. Hong (洪銘輝), J. Kwo (郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Central University, Jan. 23-25, 2007.

114.  “Investigation of a new diluted magnetic oxide with room temperature ferromagnetism- Co doped HfO2, Y. H. Chang, W. C. Lee, M. L. Huang, S. F. Lee, L. Goncharova, T. Gustafsson, Y. L. Soo, M. Hong and J. Kwo, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Central University, Jan. 23-25, 2007.

115.  “Structural and compositional study of cubic HfO2 doped with Y2O3”, Z. K.Yang (楊智凱), W. G. Lee(李威縉), Y. J. Lee(李毅君), Y. H. Chang(張宇行), C.H. Lee(李奇勳), K. L. Yu(于冠禮), C. -H. Hsu(徐嘉鴻), M. T. Tang(湯茂竹), M. Hong(洪銘輝) , and J. Kwo(郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Central University, Jan. 23-25, 2007.

116.  “Inelastic Electron Tunneling Spectroscopy study on HfO2 MOS structure”, S. L. You(游璇龍), C. C. Huang(黃建中), W. C. Lee(李威縉), M. L. Huang (黃懋霖), H. C. Ho(何信佳), M. Hong(洪銘輝), and J. Kwo(郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Central University, Jan. 23-25, 2007.

117.  “MOS Ge Diodes Based on High k Gate Dielectrics Grown by MBE and ALD”, K. Y. Lee, W. C. Lee, T. D. Lin, C. S. Lee, Y. C. Chang, Y. J. Lee, M. L. Huang, Y. D. Wu, M. Hong, J. Kwo, APS March Meeting, Denver, Co, March 5-9, 2007.

118.  “Inelastic Electron Tunneling Spectroscopy of Silicon Based MOS Diode with High Permittivity Gate Dielectrics”, S. L. You, C. C. Huang, W. C. Lee, M. L. Huang, H. C. Ho, M. Hong, and J. Kwo, APS March Meeting Denver, Co, March 5-9, 2007.

119.  “MBE and ALD grown High κ Dielectrics Gate Stacks on GaN”, Y. C. Chang, K. Y. Lee, W. C. Lee, T. D. Lin, Y. J. Lee, M. L. Huang, M. Hong, J. Kwo and Y. H. Wang, APS March Meeting Denver, Co, March 5-9, 2007.

120.  Investigations of a New Diluted Magnetic Oxide with Room Temperature Ferromagnetism in Co-doped HfO2, Y. H. Chang, W. C. Lee, M. L. Huang, S. F. Lee, Y. L. Soo, M. Hong, and J. Kwo, APS March Meeting, Denver, CO, March 5-9, 2007.

121.  “The mechanism of Fermi level pinning/unpinning at high k Oxide/GaAs interface”, M. L. Huang, W. C. Lee, P. Chang, T. D. Lin, Y. J. Lee, and M. Hong, J. Kwo, APS March Meeting Denver, Co, March 5-9, 2007.

122.  “Enhancement-Mode (with Channel Inversion) and Depletion-Mode MOSFETs with Ga2O3(Gd2O3)/Si3N4 Dual-Layer Gate Dielectrics on In0.2Ga0.8As”, Jun-Fei Zheng, Wilman Tsai, Tsung-Da Lin, Chih-Ping Chen, Minghwei Hong, J. Raynien Kwo, Sharon Cui and Tso-Ping Ma, MRS Spring Meeting, April 9-13, 2007.

123.  “Growth and material characteristics of Ga2O3(Gd2O3)Si3N4 dual-layer gate dielectric for inversion-channel and depletion mode GaAs-based MOSFET”, T. D. Lin, C. P. Chen, M. L. Huang, Y. J. Lee, C. H. Lee, M. C. Pan, M. Hong, J. Kwo, J. F. Zheng, W. Tsai, S. Cui, and T. P. Ma, MRS Spring Meeting, April 9-13, 2007.

124.  "High κ dielectrics fabricated using a novel MBE template approach for subsequent ALD growth: MOSFET’s and MOS Diode’s characteristics", C. H. Pan, K. Y. Lee, W.C. Lee, L. K. Chu, M. L. Huang, C.H. Chu, Y.J. Lee, M. Hong, and J. Kwo, 25th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico, USA, September 23-26, 2007.

125.  "Growth and structural characteristics of GaN/nano thick g-Al2O3/Si (111)", W. C. Lee, H. M. Ng, Y. J. Lee, L. T. Tung, S. Y. Wu, C. H. Lee, J. Kwo, C. H. Hsu, and M. Hong, 25th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico, USA , September 23-26, 2007.

126.  "Nano thick Y2O3 films grown on Si (111) with a structural perfection", W. C. Lee, C. W. Nieh, Y. J. Lee, Z. K. Yang, C.-H. Hsu, A. R. Kortan, J. Kwo, and M. Hong, 25th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico, USA, September 23-26, 2007.

127.  "Oxide scalability in Ga2O3(Gd2O3)/In0.20Ga0.80As/GaAs hetero-structures", K. H. Shiu, C. H. Chiang, Y. D. Wu, W. C Lee, Y. J. Lee, P. Chang, L. T. Tung, J. Kwo, and M. Hong, 25th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico, USA, September 23-26, 2007.

128.  "MBE grown Ga2O3(Gd2O3) high-k dielectrics for Germanium passivation", C. H. Lee, T. D. Lin, L. T. Tung, K. Y Lee, J. Kwo, and M. Hong, 25th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico, USA, September 23-26, 2007.

129.  "Structural Investigation of MBE Grown Yttrium-Doped HfO2 Heterostructures", C. H. Lee, Z. K. Yang, W. C. Lee, Y. J. Lee, B.H. Lin, C. H. Hsu, J. Kwo and M. Hong, NSRRC 13th Users' Meeting October 31-November 7, 2007, Hsinchu, Taiwan.

130.  "Growth and structural characteristics of GaN/nano thick g-Al2O3/Si(111)", W. C. Lee, H. M. Ng, Y. J. Lee, L. T. Tsung, S.Y. Wu, C. H. Lee, J. Kwo, C. H. Hsu, and M. Hong, NSRRC 13th Users' Meeting, 10/31-11/7, 2007, Hsinchu, Taiwan.

131.  "Structural Characteristics and Strain Relaxation Behavior of Nano-thick Y2O3 Films Epitaxially Grown on Si(111)", Y. J Lee, W. C. Lee, C. W. Nieh, Z. K. Yang, J. Kwo, C. H. Hsu, and M. Hong, NSRRC 13th Users' Meeting, 2007, 10/31-11/7, Hsinchu, Taiwan.

132.  "Self-aligned Inversion N-channel Ga2O3(Gd2O3)/GaAs MOSFET with TiN Gate and Ga2O3(Gd2O3) Dielectric", C. P. Chen, T. D. Lin, Y. C. Chang, M. Hong, and J. Kwo, International Semiconductor Device Research Symposium (ISDRS), College Park, MD, USA, December 12-14, 2007.

133.  "InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation", Y. C. Chang, M. L. Huang, Y. J. Lee, K. Y. Lee, T. D. Lin, M. Hong, J. Kwo, C. C. Liao, K. Y. Cheng, and T. S. Lay, International Semiconductor Device Research Symposium (ISDRS), College Park, MD, USA, December 12-14, 2007.

2008

134.  “Achieving one nanometer equivalent oxide thickness in atomic layer deposited HfO2 on In0.53Ga0.47As”, K. Y. Lee (李昆育), P. Chang (張翔筆), Y. C. Chang (張耀中), M. L. Huang (黃懋霖), Y. J. Lee (李毅君), M. Hong (洪銘輝) and J. Kwo (郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chiao Tung University, Jan. 23-25, 2008.

135.  “Inelastic Electron Tunneling Spectroscopy Study of MOS Diodes Based on High-κ Gate Dielectrics”, C. J. Wang (王政鈞), S. L. You (游璇龍), C. C. Huang (黃建中), H. C. Ho (何信佳), J. Kwo (郭瑞年), P. Chang (張翔筆), W. C. Lee (李威縉), K. Y. Lee (李昆育), M. L. Huang (黃懋霖), Y. D. Wu (吳彥達), Y. J. Lee (李毅君), and M. Hong (洪銘輝), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chiao Tung University, Jan. 23-25, 2008.

136.  “Thickness-dependent growth of epitaxial ZnO film on Si(111) using a γ-Al2O3 buffer layer”, Y. H. Li (李岳勳) W. R. Liu (劉維仁), W. C. Lee (李威縉), M. Hong (洪銘輝), J. Kwo (郭瑞年), C.-H. Hsu (徐嘉鴻), Z. K. Yang (楊智凱), B. H. Lin (林碧軒), and W. F. Hsieh (謝文峰), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chiao Tung University, Jan. 23-25, 2008.

137.  “Oxide scalability in Al2O3/Ga2O3(Gd2O3)/In0.2Ga0.8As/GaAs MOS capacitors under high temperature annealing”, K. H. Shiu(徐堃豪), C. H. Chiang(江宗鴻), P. Chang (張翔筆), W. C. Lee (李威缙), J. Kwo (郭瑞年), and M. Hong(洪銘輝), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chiao Tung University, Jan. 23-25, 2008.

138.  “High κ dielectrics hcp Gd2O3 on GaN with an equivalent oxide thickness approaching 0.5 nm”, W. H. Chang (張文馨), Y. C. Chang (張耀中), P. Chang (張翔筆), C. H. Lee (李志勛), M. L. Huang (黃懋霖), Y.J. Lee (李毅君), M. Hong (洪銘輝), J. Kwo (郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chiao Tung University, Jan. 23-25, 2008.

139.  “High-κ dielectrics on high carrier mobility semiconductors – structural, chemical, and electrical characterizations”, L. T. Tung (董烈廷), M. L. Huang(黃懋霖), Y. J. Lee(李毅君), K. Y. Lee(李昆育), P. Chang(張翔筆), K. H. Shiu(徐堃豪), M. Hong(洪銘輝), and J. Kwo(郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chiao Tung University, Jan. 23-25, 2008.

140.  “High-κ gate dielectrics in-situ deposited on ultra high vacuum prepared Ge surface”, B. H. Chin (覃炳華), W. C. Lee(李威縉), T. D. Lin(林宗達), C. H. Lee(李奇勳), M. Hong(洪銘輝), and J. Kwo(郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chiao Tung University, Jan. 23-25, 2008.

141.  “Effective passivation of nano-thick Y2O3/GaAs hetero-structure with in situ Al2O3”, Y. C. Leea (李易靜), M. L. Huang (黃懋霖), P. Chang (張翔筆), W. C. Lee (李威縉), M. Hong (洪銘輝) and J. Kwo (郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chiao Tung University, Jan. 23-25, 2008.

142.  “Interfacial engineering for high-quality epitaxial ZnO on Si(111) using a thin Y2O3 buffer layer”, W. R. Liu (劉維仁),Y. H. Li (李岳勳), W. C. Lee(李威缙),Y. J. Lee(李毅君), B. H. Lin(林碧軒), Z. K. Yang (楊智凱), M. Hong (洪銘輝), J. Kwo (郭瑞年), C.-H. Hsu (徐嘉鴻), and W. F. Hsieh (謝文峰), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chiao Tung University, Jan. 23-25, 2008.

143.  “Electronic structure analysis of High-k HFO2 materials using electron energy loss spectroscopy (EELS)”, S. C. Liou (劉思謙), M. W. Chu (朱明文), C.H. Chen (陳正弦), Y. J. Lee(李毅君), M. Hong (洪銘輝), and J. Kwo (郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chiao Tung University, Jan. 23-25, 2008.

144.  “Spin injection across Fe3Si/AlGaAs interface deposited by molecular beam epitaxy”, C. Y. Hsieh (謝政義), H. C. Ho (何信佳), P. Chang (張翔筆), Y. N. Chiu (邱淵楠), Y. S. Lee (李奕昇), M. Hong (洪銘輝), and J. Kwo (郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chiao Tung University, Jan. 23-25, 2008.

145.  “Atomic-layer-deposited HfO2 on In0.53Ga0.47As – passivation and energy-band parameters”, Y. C. Chang, K. Y. Lee, M. L. Huang, Y. J. Lee, T. D. Lin, M. Hong, and J. Kwo, American Physical Society March Meeting at New Orleans, Louisiana, March 10-14, 2008.

146.  “Inelastic Electron Tunneling Spectroscopy Study of MOS Diodes Based on High- Gate Dielectrics”, S. L. You, C. C. Huang, C. J. Wang, H. C. Ho, J. Kwo, W. C. Lee, K. Y. Lee, Y. D. Wu, Y. J. Lee, and M. Hong, American Physical Society March Meeting at New Orleans, Louisiana, March 10-14, 2008.

147.  “Interfacial-layers-free Ga2O3(Gd2O3)/Ge MOS Diodes”, C. H. Lee, T. D. Lin, K. Y. Lee, M. L. Huang, L. T. Tung, M. Hong, and J. Kwo, American Physical Society March Meeting at New Orleans, Louisiana, March 10-14, 2008.

148.  Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al2O3/Ga2O3(Gd2O3) as gate dielectrics”, T. D. Lin, C. P. Chen, H. C. Chiu, P. Chang, C. A. Lin, M. Hong, J. Kwo, and W. Tsai, Device Research Conference, U. C. Santa Barbara, June 24-27, 2008.

149.  “Inversion-channel GaN nMOSFET with atomic-layer-deposited Al2O3 as gate dielectric”, Y. C. Chang, W. H. Chang, H. C. Chiu, L. T. Tung, C. H. Lee, K. H. Shiu, and M. Hong, J. Kwo, J. M. Hong, and C. C. Tsai. Device Research Conference, U. C. Santa Barbara, June 24-27, 2008.

150.  “MBE grown nm-thick single crystal Sc2O3 template on Si for GaN overgrowth”, W. C. Lee, Y. J. Lee, C. H. Lee, S. Y. Wu, J. Kwo, C. H. Hsu, H. M. Ng, and M. Hong, the 15th International Molecular beam Epitaxy Conference, Vancouver, Canada, Aug 4-8, 2008.

151.  “GaN metal oxide semiconductor diode with MBE-Al2O3 as a template followed by ALD growth - Electrical and interfacial characteristics”, H. C. Chiu, C. H. Lee, W. H. Chang, W. C. Lee, Y. H. Chang, J. Kwo, and M. Hong, the 15th International Molecular beam Epitaxy Conference, Vancouver, Canada, Aug 4-8, 2008.

152.  “High k dielectrics HCP Gd2O3 on GaN with an equivalent oxide thickness approaching 0.5 nm”, W. H. Chang, Y. J. Lee, C. H. Lee, Y. C. Chang, P. Chang M. L. Huang, J. Kwo, J. M. Hong, and M. Hong, the 15th International Molecular beam Epitaxy Conference, Vancouver, Canada, Aug 4-8, 2008.

153.  Characteristics of Metal-Oxide-Semiconductor devices with MBE-Grown Y2O3 on Ge(100)”, L. K. Chu, W. C. Lee, C. H. Lee, M. Hong and J. Kwo, the 15th International Molecular beam Epitaxy Conference, Vancouver, Canada, Aug 4-8, 2008.

154.  Molecular Beam Epitaxy Grown Al2O3/HfO2 High-κ Dielectrics for Germanium”, B. H. Chin, W. C. Lee, C. H. Lee, L. K. Chu, Y. J. Lee, L. T. Tung, T. D. Lin, M. Hong, and J. Kwo, the 15th International Molecular beam Epitaxy Conference, Vancouver, Canada, Aug 4-8, 2008.

155.  “Inversion Channel Enhancement mode MOSFETs with Re-grown Source and Drain Contacts”, C. Liao, D. Cheng, C. Cheng, K. Y. Cheng*, M. Feng, C. H. Chiang, J. Kwo, and M. Hong, the 15th International Molecular beam Epitaxy Conference, Vancouver, Canada, Aug 4-8, 2008.  

156.  “Depletion-mode InGaAs MOSFET with MBE grown Ga2O3(Gd2O3) gate dielectric”, C. A. Lin, T. D. Lin, C. H. Chiang, M. Hong, and J. Kwo, the 15th International Molecular beam Epitaxy Conference, Vancouver, Canada, Aug 4-8, (2008).

157.  “Research on III-V and Ge nano-electronics for key technology beyond Si CMOS”, Ming-Hwei Hong, J. Kwo, M. L. Huang, T. D. Lin, Y. C. Chang, W. C. Lee, P. Chang, and L. K. Chu, The 2nd IEEE Nanotechnology Materials and Devices Conference (NMDC2008), Main Campus (Yoshida Campus) of Kyoto University, Japan, Oct 20-22, 2008.

158.  Approaching Fermi Level Unpinning in Oxide-In0.2GA0.8As, T. H. Chiang, W. C. Lee, T. D. Lin, D. Lin, K. H. Shiu, J. Kwo, W. E. Wang, W. Tsai, and M. Hong, International Electron Devices Meeting, San Francisco, CA, Dec 15-17, 2008.

2009

159.  “Study of Spin Injection from Fe3Si into GaAs by Spin-Light Emitting Diode”, Y. S. Li (李奕昇), C. Y. Hsieh (謝政義), H. C. Ho(何信佳),P. Chang (張翔筆), M. Hong (洪銘輝), and J. Kwo (郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Changhua University of Education, Jan. 19-21, 2009. (優等獎)

160.  “In-situ investigation of interface between Gd2O3 and GaAs(100) by cross-sectional Scanning Tunneling Microscopy”, J. Y. Shen (沈俊仰), M. C. Shih (施敏權), Y. P. Chiu (邱雅萍), M. L. Huang (黃懋霖), W. C. Lee (李威縉), T. H. Jiang (江宗鴻), M. Hong (洪銘輝), and J. Kwo (郭瑞年), the Taiwan AVS meeting, Jan. 19-21, 2009.

161.  “Direct Observation of interface structure in epitaxial Gd2O3 on GaAs(100) by STM”, Y. P. Chiu a(邱雅萍), M. C. Shih (施敏權), J. Y. Shen (沈俊仰), M. Hong (洪銘輝), and J. Kwo (郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Changhua University of Education, Jan. 19-21, 2009. 

162.  “DMO magnetism and structural analysis of Co doped Y2O3 films”, C. N. Wu (巫啟男), Y. H. Chang (張宇行), Y. L. Soo (蘇雲良), W. C. Lee (李威縉), Y. J. Lee (李毅君), T. Y. Lai (賴德洋), M. Hong (洪銘輝), and J. Kwo (郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Changhua University of Education, Jan. 19-21, 2009.

163.  “Investigation of the Al2O3/Ga2O3(Gd2O3)/In0.2Ga0.8As/GaAs gate stack by coherent phonon spectroscopy”, C. Y. Chuang (莊卓穎), Y.-M. Chang (張玉明), T. H. Chiang (江宗鴻), H. C. Chiu (邱漢欽), C. L. Chang (張嘉麟), M. Hong (洪銘輝), and J. Kwo (郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Changhua University of Education, Jan. 19-21, 2009.

164.  “Electrical analysis of Fermi level unpinning in Ga2O3(Gd2O3)/Ge interface”, R. L. Chu, L. K. Chu, T. D. Lin, Y. C. Chang, M. Hong, and J. Kwo, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Changhua University of Education, Jan. 19-21, 2009.

165. “Depletion-mode InGaAs MOSFET with MBE grown Ga2O3(Gd2O3) gate dielectric”, C. A. Lin (林俊安), L. T. Tung (董烈廷), T. D. Lin (林宗達), T. H. Chiang (江宗鴻), M. Hong (洪銘輝), and J. Kwo (郭瑞年), American Vacuum Society (AVS) WorkshopBeyond Si CMOS & 2009 ROC Physical Society Annual Meeting, Changhua, Taiwan, Jan. 19-21, 2009. (優等獎the best poster paper in the field of Semiconductors)

166. “Approaching Fermi Level Unpinning in Oxide-In0.2Ga0.8As”,W. C. Lee, T. H. Chiang, T. D. Lin, D. Lin, K. H. Shiu, J. Kwo, W. E. Wang, W. Tsai, and M. Hong, 3rd International Workshop on High k Dielectrics on high Mobility Channel Materials, Hsinchu, Taiwan, Jan. 19th, 2009.

167. "Energy-band parameters of atomic-layer-deposited Al2O3 and HfO2 on InxGa1-xAs", M. L. Huang, Y. C. Chang, Y. H. Chang, T. D. Lin, J. Kwo, and M. Hong, 3rd International Workshop on High k Dielectrics on high Mobility Channel Materials, Hsinchu, Taiwan, Jan. 19th , 2009.

168. “Ge MOS devices with UHV-Ga2O3(Gd2O3) without interfacial layers” L. K. Chu, T. D. Lin, C. H. Lee, W. C. Lee, R. L. Chu, Y. C. Lee, C. C. Chang, M. Hong*, and J. Kwo*, 3rd International Workshop on High k Dielectrics on high Mobility Channel Materials, Hsinchu, Taiwan, Jan. 19th, 2009.

169. “Inversion-channel and D-mode GaN MOSFETs using atomic-layer-deposited Al2O3 as gate dielectrics”, Y. C. Chang, W. H. Chang, Y. H. Chang, L.T. Tung, D. Y. Lai, M. Hong*, J. Kwo*, J. M. Hong, and C. C. Tsai, 3rd International Workshop on High k Dielectrics on high Mobility Channel Materials, Hsinchu, Taiwan, Jan. 19th, 2009.

170. "Achieving a low interfacial density of states in atomic layer deposited Al2O3 on In0.53Ga0.47As", H. C. Chiu, L. T. Tung, Y. H. Chang, Y. J. Lee, C. C. Chang, J. Kwo, and M. Hong, 2009 APS March meeting, Pittsburgh, USA, Mar. 16-20th, 2009.

171. “Energy-band parameters of atomic-layer-deposited Al2O3 and HfO2 on InxGa1-xAs”, M. L. Huang, Y. C. Chang, Y. H. Chang, T. D. Lin, M. Hong, and J. Kwo, 2009 APS March meeting, Pittsburgh, USA, Mar. 16-20th, 2009.

172. "Inversion-channel GaN MOSFET using atomic-layer-deposited Al2O3 as gate dielectric", Y. C. Chang, Y. H. Chang, H. C. Chiu, Y. H. Chang, L. T. Tung, C. H. Lee, M. Hong, J. Kwo, J. M. Hong, C. C. Tsai, VLSI-TSA, April 27-29, 2009

173. “Metal-Oxide-Semiconductor devices with UHV-Ga2O3(Gd2O3) on Ge(100)”, L. K. Chu, T. D. Lin, C. H. Lee, L. T. Tung, W. C. Lee,R. L. Chu, C. C. Chang, M. Hong, and J. Kwo, VLSI-TSA, April 27-29, 2009.

174. "Self-aligned inversion channel In0.53Ga0.47As N-MOSFETs with ALD-Al2O3 and MBE-Al2O3/Ga2O3(Gd2O3) as gate dielectrics", H. C. Chiu, T. D. Lin, P. Chang, W. C. Lee, C. H. Chiang, J. Kwo, Y. S. Lin,  Shawn. S. H. Hsu, W. Tsai, M. Hong, VLSI-TSA, April 27-29, 2009.

175. “High performance self-aligned inversion-channel MOSFETs with In0.53Ga0.47As channel and ALD-Al2O3 gate dielectric”, H. C. Chiu, P. Chang, M. L. Huang, T. D. Lin, Y. H. Chang, J. C. Huang, S. Z. Chen, J. Kwo, W. Tsai, and M. Hong, Device Research Conference, Penn State University, University Park, PA on June 22-24, 2009.

176. “Achieving Nearly Free Fermi-Level Movement and Vth Engineering in Ga2O3(Gd2O3)/In0.2Ga0.8As”, T. D. Lin, Y. D. Wu, Y. C. Chang, T. H. Chiang, C. Y. Chuang, C. A. Lin, W. H. Chang, H. C. Chiu, W. Tsai, J. Kwo, and M. Hong, Device Research Conference, Penn State University, University Park, PA on June 22-24, 2009.

177. "High quality Ga2O3(Gd2O3) on Ge (100) – electrical and chemical characterizations", R. L. Chu, L. K. Chu, M. L. Huang, L. T. Tung, T. D. Lin, C. C. Chang, J. Kwo, and M. Hong, 26th North American Molecular Beam Epitaxy Conference (NAMBE), Aug. 9-12, 2009.

178. "MBE-HfAlO for passivating InGaAs with 1 nm capacitance effective thickness", P. Chang, W. C. Lee, M. L. Huang, Y. J. Lee, M. Hong, and J. Kwo, 26th North American Molecular Beam Epitaxy Conference (NAMBE), Aug. 9-12, 2009.

179. "RF characteristics of self-aligned inversion-channel In0.53Ga0.47As MOSFETs using MBE-Al2O3/Ga2O3(Gd2O3) gate dielectrics", T. D. Lin, P. Chang, H. C. Chiu, J. Kwo, S. Lin, Shawn S. H. Hsu, and M. Hong, 26th North American Molecular Beam Epitaxy Conference (NAMBE), Aug. 9-12, 2009.

180. "Further study of epitaxial Y2O3 films on Si (111) – lattice strain/relaxation and in-situ depth profiling", Y. J. Lee. W. C. Lee, M. L. Huang, C. W. Nieh, C.-H. Hsu, J. Kwo, and M. Hong, 26th North American Molecular Beam Epitaxy Conference (NAMBE), Aug. 9-12, 2009.

181. "Engineering of threshold voltages in MBE-grown Ga2O3(Gd2O3)/In0.2Ga0.8As", Y. D. Wu, Y. C. Chang, T. D. Lin, T. H. Chiang, J. Kwo, W. Tsai, and M. Hong, 26th North American Molecular Beam Epitaxy Conference (NAMBE), Aug. 9-12, 2009.

182. "Self-aligned inversion-channel In0.75Ga0.25As MOSFETs using MBE-Al2O3/Ga2O3(Gd2O3) and ALD-Al2O3 as gate dielectrics", T. D. Lin, H. C. Chiu, P. Chang, Y. H. Chang, C. A. Lin, W. H. Chang, J. Kwo, W. Tsai, and M. Hong, 39th European Solid-State Device Research Conference (ESSDERC), Athens, Greece, Sep. 14-18, 2009.

183. “High Performance Ga2O3(Gd2O3)/Ge MOS Devices Without Interfacial Layers”, L. K. Chu, R. L. Chu, M. L. Huang, L. T. Tung, T. D. Lin, C. C. Chang, J. Kwo, and M. Hong, 39th European Solid-State Device Research Conference (ESSDERC), Athens, Greece, Sep. 14-18, 2009.

184. "Nano-meter thick single crystal hexagonal Gd2O3 on GaN for advanced complementary metal-oxide-semiconductor technology" Wen-Hsin Chang (張文馨), Chih-Hsun Lee (李志勛), Yao-Chung Chang (張耀中), Pen Chang (張翔筆), Mao-Lin Huang (黃懋霖), Yi-Jun Lee (李毅君), Chia-Hung Hsu (徐嘉鴻), J. Minghuang Hong (洪銘煌), Chiung-Chi Tsai (蔡炯棋), J. Raynien Kwo (郭瑞年) and  Minghwei Hong (洪銘輝), 15th NSRRC users' annual meeting, Hsinchu, Taiwan, Oct. 15-16, 2009.

185. "High quality nano-thick Gd2O3 films on GaN" S. Y. Wu (吳紹筠), T. Y. Lai (賴德洋), Y. J. Lee (李毅君), L. H. Lai (賴來宏), P. Chang (張翔筆), J. Kwo (郭瑞年), C.-H. Hsu (徐嘉鴻) and M. Hong (洪銘輝), 15th NSRRC users' annual meeting, Hsinchu, Taiwan, Oct. 15-16, 2009.

186. “Enhancement-mode inversion-channel and depletion-mode GaN MOSFETs using atomic-layer-deposited Al2O3 and HfO2 as gate dielectrics”, Y. C. Chang, W. H. Chang, Y. H. Chang, J. Kwo, J. M. Hong, C. C. Tsai and M. Hong, Symposium A, MRS Fall Meeting, Boston, Nov. 30 – Dec. 4, 2009.

187. “Energy-band parameters of atomic-layer-deposited Al2O3 and HfO2 on InGaAs”, M. L. Huang, Y. C. Chang, Y. H. Chang, T. D. Lin, P. Chang, M. Hong* and J. Kwo*, Symposium A, MRS Fall Meeting, Boston, Nov. 30 – Dec. 4, 2009.

188. “Atomic-layer-deposited Al2O3 and HfO2 on InGaAs – electrical and interfacial micro-structural and chemical characteristics”, Y. J. Lee, M. L. Huang, Y. C. Chang, Y. H. Chang, H. C. Chiu, P. Chang, J. Kwo* and M. Hong*, Symposium A, MRS Fall Meeting, Boston, Nov. 30 – Dec. 4, 2009.

189. “The lasing characteristic of epitaxial ZnO films on Si (111) using Y2O3 buffer layer”, C. C. Kuo, W. R. Liu, W. F. Hsieh, C. H. hsu, W. C. Lee, M. Hong, and J. Kwo, Symposium A, MRS Fall Meeting, Boston, Nov. 30 – Dec. 4, 2009.

190. “Charge Pumping Study of the Trap Density in CF4 treated TiN/Ga2O3(Gd2O3)/Ge”, C. A. Lin, L. K. Chu, T. D. Lin, R. L. Chu, L. T. Tung, M. Hong* and J. Kwo*, SISC, Washington Dc, Dec 3-5, 2009.

2010

191. “DMO magnetism and structure study on Co doped Y2O3”, C. N. Wu (巫啟男), S. Y. Huang (黃斯衍), W. C. Lee (李威縉), Y. J. Lee (李毅君), W. C. Lin (林薇甄), Y. H. Chang (張宇行), T. S. Wu (吳泰興), Y. L. Soo (蘇雲良), M. Hong (洪銘輝) and J. Kwo (郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Cheng Kung University, Feb. 2-4, 2010. 優良壁報論文獎.

192. “Electron tunneling spectroscopy study of silicon metal-oxide-semiconductor diodes with HfO2 as gate dielectric”, W. Y. Wei (魏文耀), M. L. Huang (黃懋霖), S. Y. Huang (黃斯衍), W. C. Lee (李威縉), Y. H. Chang (張宇行), M. Hong (洪銘輝) and J. Kwo (郭瑞年) , 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Cheng Kung University, Feb. 2-4, 2010. 優良壁報論文獎.

193. “Investigation on the Fermi level pinning mechanism of III-V’s by in-situ depositing ALD-Al2O3 on GaAs”, Y. H. Chang, M. L. Huang, P. Chang, H. C. Chiu, J. Kwo and M. Hong, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Cheng Kung University, Feb. 2-4, 2010.

194. “Magneto-optical properties of epitaxial Fe3Si film on GaAs(001) ”, Y. C. Liu (劉有騏) , L. J. Chang (張良君) , S. Y. Huang (黃斯衍), H. Y. Hung (洪宏宜), P. Chang  (張翔筆), S. F. Lee (李尚凡), M. Hong (洪銘輝) and J. Kwo (郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Cheng Kung University, Feb. 2-4, 2010.

195. “Interfacial electronic structure of ALD-grown Al2O3 on n-GaAs by synchrotron radiation photoemission”, M. L. Huang, Y. H. Chang, Y. J. Wang, P. Chang, T. W. Pi, J. Kwo and M. Hong, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Cheng Kung University, Feb. 2-4, 2010.

196. “Atomic-scale electronic structure at nm-thick epitaxial Gd2O3 gate oxides on GaAs (100)”, B. C. Huang , Y. P. Chiu, M. C. Shih, J. Y. Shen, M. L. Huang, W. C. Lee, T. H. Chiang , M. Hong, and J. Kwo, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Cheng Kung University, Feb. 2-4, 2010.

197. “Distribution of interfacial trap density in Ga2O3(Gd2O3)/In0.2Ga0.8As by quasi- static CV measurement/simulation and conductance method”, T. H. Chiang, H. C. Chiu, L. H. Lai, C. A. Lin, W. H. Chang, Y. C. Chang, M. Hong, and J. Kwo, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Cheng Kung University, Feb. 2-4, 2010.

198. “Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial films”, H. Y. Hung, S.Y. Huang, P. Chang, W. C. Lin, S. F. Lee, M. Hong, and J. Kwo, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Cheng Kung University, Feb. 2-4, 2010.

199.“Interfacial electrical properties of high k dielectrics on GaAs”, P. Chang, Y. H. Chang, Y. J. Chu, L. H. Lai, M. Hong, and J. Kwo, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Cheng Kung University, Feb. 2-4, 2010.

200. “Field-Induced Second Harmonic Generation of a High k Gate Dielectric / Ge(001) MOS Structure”, C. L. Chang (張嘉麟), Y. M. Chang (張玉明) , L. K. Chu (朱龍琨), R. L. Chu (朱瑞霖), T. H Chiang(江宗鴻), M. Hong (洪銘輝), and J. Kwo (郭瑞年),, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Cheng Kung University, Feb. 2-4, 2010.

201. “Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial films”, H. Y. Hung, S.Y. Huang, P. Chang, W. C. Lin, S. F. Lee, M. Hong and J. Kwo, APS March Meeting, Portland, Oregon, US, March 15-19, 2010.

202. In-situ XPS, STM and STS analyses of high k oxide/III-V interfaces”, Y. H. Chang, M. L. Huang, P. Chang, J. Y. Shen, T. D. Lin, T. W. Pi, M. Hong, and J. Kwo, APS March Meeting, Portland, Oregon, US, March 15-19, 2010.

203.“Nano-meter thick single crystal Gd2O3 on GaN for advanced complementary metal-oxide-semiconductor technology”, W. H. Chang, C. H. Lee, T. Y. Lai, Y. C. Chang, P. Chang, M. L. Huang, Y. J. Lee, C. –H. Hsu, J. M. Hong, C. C. Tsai, J. Kwo, and M. Hong, The 3rd Hsinchu - Tsukuba Joint Workshop, Hsinchu, Taiwan, Apr. 2-3, 2010.

204. “Interfacial electrical properties of high k dielectrics on GaAs”, Y. J. Chu, L. H. Lai, P. Chang, Y. H. Chang, C. A. Lin, H. C. Chiu, M. Hong, and J. Kwo, The 3rd Hsinchu - Tsukuba Joint Workshop, Hsinchu, Taiwan, Apr. 2-3, 2010.

205. “Advanced GaN MOSFETs with ALD-high k oxides as gate dielectrics”, Y. C. Chang, W. H. Chang, Y. H. Chang,  J. M. Hong, C. C. Tsai, M. Hong and J. Kwo, 4th International Workshop on High k Dielectric on High Carrier Mobility Channel Materials, Hsinchu, Taiwan, May 25-27, 2010.

206.“In-situ HfO2-based high-k dielectrics for passivating InGaAs high mobility channel materials”, P. Chang, M. Hong and J. Kwo, 4th International Workshop on High k Dielectric on High Carrier Mobility Channel Materials, Hsinchu, Taiwan, May 25-27, 2010.

207.“Insight of high-quality Ga2O3(Gd2O3)/Ge(100) entity with fluorine incorporation”, R. L. Chu, M. Hong and J. Kwo, 4th International Workshop on High k Dielectric on High Carrier Mobility Channel Materials, Hsinchu, Taiwan, May 25-27, 2010.

208."Self-aligned inversion channel In0.2Ga0.8As/GaAs MOSFET with Al2O3/Ga2O3(Gd2O3) gate dielectrics without interfacial passivation layer", W. H. Chang, T. D. Lin, H. C. Chiu, C. A. Lin, T. H. Chiang, M. Hong and J. Kwo, 4th International Workshop on High k Dielectric on High Carrier Mobility Channel Materials, Hsinchu, Taiwan, May 25-27, 2010.

209.“Fermi level unpinning in oxide-InGaAs”, W. C. Lee, T. H. Chiang, T. D. Lin, M. L. Huang, P. Chang, H. C. Chiu, Y. C. Chang, L. T. Tung, K. H. Shiu, W. E. Wang, D. Lin, W. Tsai, J. Kwo and M. Hong, 4th International Workshop on High k Dielectrics on High Carrier Mobility Channels Materials, Hsinchu, Taiwan, May 25-27, 2010.

210.Low Interfacial Trap Density in Absence of Peak Features Near Midgap of Ga2O3(Gd2O3) / In0.2Ga0.8As Gate Stacks”, C. A. Lin, H. C. Chiu, W. H. Chang, T. H. Chiang, Y. C. Chang, L. H. Lai, T. D. Lin, J. Kwo, W. E Wang, J. Dekoster, M. Caymax, M. Meuris, M. Heyns, and M. Hong, 4th International Workshop on High k Dielectrics on High Carrier Mobility Channels Materials, Hsinchu, Taiwan, May 25-27, 2010. 

211."Studies of the Fermi level pinning mechanism of III-V’s by in-situ depositing ALD-Al2O3 on GaAs", Y. H. Chang, M. L. Huang, P. Chang, J. Y. Shen, Y. J. Chu, C. L. Hsu, B. R. Chen, T. W. Pi, M. Hong and J. Kwo, E-MRS Spring Meeting, Strasbourg, France, June 7-11, 2010.

212."Distribution of interfacial trap density in Ga2O3(Gd2O3)/In0.2Ga0.8As by quasi- static CV measurement/simulation", T. H. Chiang, H. C. Chiu, L. H. Lai, C. A. Lin, W. H. Chang, Y. C. Chang, M. Hong and J. Kwo, E-MRS Spring Meeting, Strasbourg, France, June 7-11, 2010.

213.“H2S Molecular Beam Passivation of Ge and III-V semiconductors for advanced CMOS”, C. Merckling, Y. C. Chang, C. Y. Lu, J. Penaud, M. El-Kazzi, F. Bellenger, G. Brammertz, M. Hong, J. Kwo, M. Meuris, J. Dekoster, M. M. Heyns, M. Caymax, E-MRS Spring Meeting, Strasbourg, France, June 7-11, 2010.

214. “Achieving high-performance Ge MOS devices using high-k gate dielectrics Ga2O3(Gd2O3) of sub-nm EOT”, L. K. Chu, R. L. Chu, C. A. Lin, T. D. Lin, T. H. Chiang, J. Kwo,and M. Hong, the 68th Annual Device Research Conference, South Bend, Indiana, US, June 21-23, 2010.

215. “Great reduction of interfacial traps in Al2O3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealing”, Y. C. Chang, C. Merckling, J. Penaud, C. Y. Lu, G. Brammertz, W. –E. Wang, M. Hong, J. Kwo, J. Dekoster, M. Caymax, M. Meuris, and M. Heyns, the 68th Annual Device Research Conference, South Bend, Indiana, US, June 21-23, 2010.

216. “Thickness dependence structural phase transition of Gd2O3 grown on GaN”, Chia-Hung Hsu, Wen Hsin Chang, Yi Jun Lee, Te-Yang Lai, Chih-Hsun Lee, Pen Chang, Yao Chung Chang, Minghwei Hong, and J. Raynien Kwo, SXNS-11, Northwestern University, Chicago, USA, July 13-17, 2010.

217. "A1μm-gate-length self-aligned inversion-channel MBE-grown Al2O3/Ga2O3(Gd2O3) /In0.75Ga0.25As MOSFET exhibiting maximum drain current of 1.23 mA/μm", T. D. Lin, P. Chang, H. C. Chiu, Y. D. Wu, Y. J. Lee, J. Kwo and M. Hong, 16th International Conference on Molecular Beam Epitaxy, Berlin, Germany, August 22-27, 2010.

218. “Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial films”, H. Y. Hung, S. Y. Huang, P. Chang, W. C. Lin, Y. C. Liu, S. F. Lee, M. Hong, and J. Kwo, 16th International Conference on Molecular Beam Epitaxy, Berlin, Germany, August 22-27, 2010.

219. Low Interfacial Trap Density in Absence of Peak Features Near Midgap of Ga2O3(Gd2O3)/In0.2Ga0.8As Gate Stacks”, C. A. Lin, H. C. Chiu, W. H. Chang, T. H. Chiang, Y. C. Chang, L. H. Lai, T. D. Lin, J. Kwo, W. E Wang, J. Dekoster, M. Caymax, M. Meuris, M. Heyns and M. Hong, 16th International Conference on Molecular Beam Epitaxy, Berlin, Germany, August 22-27, 2010.

220. "Phase transformation of MBE-grown nm thick Y2O3 on GaN", W. H. Chang, P. Chang, T. Y. Lai, Y. J. Lee, J. Kwo, C. -H. Hsu, C. C. Tsai, J. M. Hong and M. Hong, 16th International Conference on Molecular Beam Epitaxy, Berlin, Germany, August 22-27, 2010.

221. “Achieving sub-nanometer capacitive effective thickness in Ga2O3(Gd2O3)/In0.20Ga0.80As”, W. C. Lee, T. H. Chiang, Y. D. Wu, Y. J. Lee, J. Kwo, and M. Hong, 27th North American Conference on Molecular Beam Epitaxy, Breckenridge, Colorado, September 26-29,2010.

222. “Self-aligned inversion channel In0.2Ga0.8As/GaAs MOSFET with Al2O3/Ga2O3(Gd2O3) gate dielectrics”, W. H. Chang, T. D. Lin, H. C. Chiu, C. A. Lin, T. H. Chiang, M. Hong and J. Kwo, 27th North American Conference on Molecular Beam Epitaxy, Breckenridge, Colorado, Sep. 26-29, 2010.

223. “Magnetization reversal processes of epitaxial Fe3Si film on GaAs (001)”, Y. C. Liu, S. Y. Huang, L. J. Chang, P. Chang, S. F. Lee, M. Hong, and J. Kwo, 55th Annual conference on Magnetism & Magnetic Materials, Atlanta, Georgia, USA, Nov. 14-18, 2010.

224. “In-situ atomic layer deposition-Al2O3 on freshly MBE grown GaAs”, M. L. Huang, Y. H. Chang, P. Chang, C. A. Lin, J. Kwo*, T. W. Pi, and M. Hong*, 41st IEEE SISC, San Diego, CA, Dec. 2-4, 2010.

225. “Interfacial electronic structure of Ga2O3(Gd2O3) grown on n-Ge studied by synchrotron radiation photoemission”, T.-W. Pi*, W. C. Lee, M. L. Huang, L. K. Chu, T. D. Lin, T. H. Chiang, Y. C. Wang, J. Kwo*, and M. Hong, 41st IEEE SISC, San Diego, CA, Dec. 2-4, 2010.

2011

226. “Room temperature ferromagnetism in cluster free, Co doped Y2O3 dilute magnetic oxide”, C. N. Wu (巫啟男), S. Y. Huang (黃斯衍), W. C. Lee (李威縉), Y. J. Lee (李毅君), W. C. Lin (林薇甄), Y. H. Chang (張宇行), T. S. Wu (吳泰興), Y. L. Soo (蘇雲良), M. Hong (洪銘輝), and J. Kwo (郭瑞年) , 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Taiwan Normal University, Taiepi, Jan. 25-27, 2011. 

227. Low-frequency tunneling current noise in III-V metal-oxide-semiconductor capacitors”, W. Y. Wei (魏文耀), Po-Wen Cheng (鄭博文), H. C. Chiu (邱漢欽), S. Y. Huang (黃斯衍), J. C. Chen (陳正中), M. Hong (洪銘輝), and J. Kwo (郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China) , National Taiwan Normal University, Taipei, Jan. 25-27, 2011.

228. “Anisotropic and magneto-transport property in Fe3Si epitaxial films”, H. Y. Hung (洪宏宜), Y. C. Liu (劉有騏) , S.Y. Huang (黃斯衍), P. Chang (張翔筆), W. C. Lin (林薇甄), S. F. Lee (李尚凡), M. Hong (洪銘輝), and J. Kwo (郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Taiwan Normal University, Taipei, Jan. 25-27, 2011.

229.  “Room temperature ferromagnetism in cluster free, Co doped Y2O3 dilute magnetic oxide”, C. N. Wu, S. Y. Huang, W. C. Lee, Y. J. Lee, W. C. Lin, Y. H. Chang, T. S. Wu, Y. L. Soo, M. Hong, and J. Kwo, APS March Meeting, Dallas, Texas, US, March 21-25, 2011.

230. “Atomic-scale evolution of interfacial electronic band alignment in epitaxial Gd2O3 on GaAs (100)”, Y. P. Chiu, B. C. Huang, M. C. Shih, J. Y. Shen, P. Chang, T. H. Chiang, C. S. Chang, M. L. Huang, M. Hong, and J. Kwo, APS March Meeting, Dallas, Texas, US, March 21-25, 2011. 

231. “Atomic-layer-deposited Al2O3 and HfO2 on GaN: a comparative study on interfaces and electrical characteristics”, Y. C. Chang, M. L. Huang, Y. H. Chang, Y. J. Lee, H. C. Chiu, J. Kwo, and M. Hong, INFOS’ 2011, Grenoble, France, (2011). 

232. Atomic layer deposition of Al2O3 on pristine Ga-rich n-GaAs(001)-4x6 surface: An in-situ synchrotron-radiation photoemission study”, Y. H. Chang, M. L. Huang, P. Chang, J. Y. Shen, B. R. Chen, T. W. Pi, M. Hong, and J. Kwo, INFOS’ 2011, Grenoble, France, (2011). 

233. Direct measurement of interfacial structure in epitaxial Gd2O3 on GaAs (100) using scanning tunneling microscopy”, Y. P. Chiu, M. C. Shih, B. C. Huang, J. Y. Shen, M. L. Huang, W. C. Lee, P. Chang, T. H. Chiang, C. S. Chang, M. Hong, and J. Kwo, INFOS’ 2011, Grenoble, France, (2011).  

234. InAs MOS devices with MBE-grown Gd2O3 passivation”, C. A. Lin, P.-C. Chiu, M. L. Huang, H.-K. Lin, T. H. Chiang, W. C. Lee, Y. C. Chang, Y. H. Chang, J.-I. Chyi, G. J. Brown, J. Kwo, and M. Hong, 28th Northern American Molecular Beam Epitaxy Conference, University of California, San Diego, Aug. 14-17, 2011.

235. Optimization of non-gold ohmic metal contacts for advanced GaAs-based CMOS device”, W. H. Chang, T. H. Chiang, T. D. Lin, Y. H. Chen, K. H. Wu, T. S. Huang, M. Hong, and J. Kwo, 28th Northern American Molecular Beam Epitaxy Conference, University of California, San Diego, Aug. 14-17, 2011.

236. Molecular Beam Deposition of HfAlOx/ and HfO2/Al2O3 High-k Dielectrics on In0.53Ga0.47As/InP (001)”, L. K. Chu, C. Merckling, A. Alian, J. Dekoster, J. Kwo, M. Hong, M. Caymax, and M. Heyns, 28th Northern American Molecular Beam Epitaxy Conference, University of California, San Diego, Aug. 14-17, 2011. 

237. “Clean GaAs(111)A-(2×2) surface and Gd2O3/GaAs(111)A interface : in-situ synchrotron radiation photoemission study”, Mao-Lin Huang (黃懋霖), Bor-Rong Chen (陳柏蓉), Tsung-Da Lin (林宗達), Tsung-Hung Chiang (江宗鴻), Kai-Hsuan Lee (李凱璿), Jyun-Yang Shen (沈俊仰), Tun-Wen Pi (皮敦文), J. Raynien Kwo(郭瑞年), and Minghwei Hong (洪銘輝),17th NSRRC Users’ Meeting & Workshop, Hsin chu, Oct. 19-21, 2011.

238. “Interfacial Electronic Structure of ALD Al2O3 on the Clean GaAs(001)-4x6 Surface: A High-Resolution Synchrotron Radiation Photoemission Study”, T.-W. Pi, M. L. Huang, Y. H. Chang, P. Chang, J. Y. Shen, B. R. Chen, K. H. Lee, G. K. Wertheim, M. Hong, and J. Kwo, 42nd IEEE SISC (Semiconductor Interface Specialists Conference), Arlington, VA, Dec. 1-3, 2011.

239. “Fermi level unpinning in metal/oxide and oxide/III-V interfaces: metal gates on MBE-grown Al2O3/Ga2O3 (Gd2O3)/ In0.2Ga0.8As/GaAs heterostructures”, Y. C. Chang, W. C. Hsu, T. H. Chiang, C. A. Lin, Y. D. Wu, J. Kwo, and M. Hong, 42nd IEEE SISC(Semiconductor Interface Specialists Conference), Arlington, VA, Dec. 1-3, 2011.

2012

240. Interfacial electronic structure of high k Al2O3 on the clean GaAs(001)- 4X6 surface”, T. W. Pi, M. L. Huang, Y. H. Chang, P. Chang, J. Y. Shen, B. R. Chen, J. Kwo and M. Hong,中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chung-Cheng University, Chiayi, Taiwan, Jan. 17-19, 2012.

241. Detection of inverse spin hall effect in ferromagnetic/metal films”, H. Y. Hung, G. Y. Luo, Y. C. Chiu, P. Chang, J. G. Lin, S. F. Lee, M. Hong and J. Kwo, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chung-Cheng University, Chiayi, Taiwan, Jan. 17-19, 2012.

242. “Study on strontium ruthenate thin films: Growth, structure”, C. N. Wu, Yu-Chi Liu, Shuyuan Huyan, Siou-Yong Lin, M. Hong and J. Kwo, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chung-Cheng University, Chiayi, Taiwan, Jan. 17-19, 2012.

243. “Mapping the band profile across the Gd2O3/GaAs (100) hetero-interface, Y. P. Chiu, B. C. Huang , M. C. Shih, J. Y. Shen, P. Chang, C. S. Chang, M. L. Huang, M. -H. Tsai, M. Hong, and J. Kwo, presented at the March Meeting of the American Physical Society, Boston, Massachusetts, Feb. 27-Mar. 2, 2012.

244. “In-situ MBE and ALD deposited HfO2 on In0.53Ga0.47As, W. C. Lee, C.A. Lin, M.L. Huang, J. Kwo, Y.H. Chang and P. Chang, presented at the March Meeting of the American Physical Society, Boston, Massachusetts, Feb. 27-Mar. 2, 2012.

245. “In-situ photoemission analyses of ALD-oxide/InxGa1-xAs (001) interfaces, M. L. Huang, W. C. Lee, C. A. Lin, H. Y. Lin, J. Kwo, Y. H. Chang, T. H. Chiang, T. D. Lin, M. Hong and T. -W. Pi, presented at the March Meeting of the American Physical Society, Boston, Massachusetts, Feb. 27-Mar 2, 2012.

246. “Investigation of MBE-grown In0.53Ga0.47As (001) 4X2 surface and in-situ ALD TEMAH dosed surface by STM”, Y. C. Liu (劉有騏), M. L. Huang (黃懋霖), T. D. Lin (林宗達), W. C. Li (李威縉), W. W. Pai (白偉武), M. Hong (洪銘輝), and J. Kwo (郭瑞年), Taiwan Spectroscopy Conference, Wu-ling, Taiwan, Jul. 25-28, 2012.

247.“Influence of initial GaAs reconstructed surfaces on the inversion-channel GaAs MOSFETs”, Y. C. Chang, C. Merckling, W. H. Chang, J. Kwo, and M. Hong, International MBE conference, Nara, Japan, Sep, 24-28, 2012.

248.“Thermodynamic stability of MBE-HfO2 on In0.53Ga0.47As”, T. D. Lin, P. Chang, W. C. Lee, M. L. Huang, C. A. Lin, J. Kwo, and M. Hong, International MBE conference, Nara, Japan, Sep, 24-28, 2012.

249. “Investigation of crystalline Gd2O3 phase transformation for advanced GaN MOS devices”, W. H. Chang, S.Y. Wu, P. Chang, C. H. Lee, T.Y. Lai, Y. J. Lee, T. S. Huang, C. H. Hsu, J. Kwo, and M. Hong, International MBE conference, Nara, Japan, Sep, 24-28, 2012.

250. "In-situ deposited high k dielectrics for high performance InGaAs MOS", T. D. Lin, J. Kwo, and M. Hong, 9th International Symposium on Advanced Gate Stack Technology, Saratoga Springs, NY, USA, Oct. 3-4, 2012.

251. “Electrical Analysis of InxGa1-xAs MOS Devices Passivated by ALD and MBE High-k Dielectrics”, C. A. Lin, T. H. Chiang, Y. H. Chang, T. D. Lin, W. C. Lee, P.-C. Chiu, J.-I. Chyi, J. Kwo, and M. Hong, 9th International Symposium on Advanced Gate Stack Technology, Saratoga Springs, NY, Oct. 3-4, 2012.

252. “Investigation of MBE-grown In0.53Ga0.47As (001) 4x2 surface and in-situ ALD TEMA-Hf dosed surface by STM”, Y. C. Liu, M. L. Huang, T. D. Lin, Y. T. Liu, W. C. Lee, W. W. Pai, M. Hong and J. Kwo, Semiconductor Interface Specialist Conference, San Diego, CA, Dec. 5-7, 2012.

253. “An improved interfacial passivation of employing molecule beam epitaxy grown Ge epi-layer on Ge(100) substrate and in-situ high k dielectric deposition”, R. L. Chu, W. C. Lee, Y. C. Liu, Y. C. Chang, H. Y. Lin, M. L. Huang, J. Kwo, and M. Hong, Semiconductor Interface Specialist Conference”, San Diego, CA, Dec. 5-7, 2012.

254. “InGaAs(001) surfaces and native oxide free high k interfaces”, T.-W. Pi, T. D. Lin, H. Y. Lin, Y. T. Liu, Y. C. Chang, M. L. Huang, Y. H. Chang, G. K. Wertheim, J. Kwo, and M. Hong, Semiconductor Interface Specialist Conference, San Diego, CA, Dec. 5-7, 2012.

2013

255. “Observation of Room Temperature Ferromagnetism in Cluster Free, Co doped Y2O3 Dilute Magnetic Oxide Films”, C. N. Wu, S. Y. Huang, W. C. Lee, Y. H. Chang, T. S. Wu, Y. L. Soo, M. Hong*, and J. Kwo*, MMM/Intermag 13th Joint conference, Chicago, IL, Jan., 14-16, 2013.

256. “Detection of inverse spin Hall effect in epitaxail ferromagnetic metal films, H. Y. Hung, G. Y. Luo, Y. C. Chiu, P. Chang, W. C. Lee, J. G. Lin, S. F. Lee, M. Hong*, and J. Kwo*, MMM/Intermag 13th Joint conference, Chicago, IL, Jan., 14-16, 2013.

257. “Study of in-situ atomic-layer-deposited Al2O3 on GaAs (001) with different initial GaAs reconstructed surfaces“, Y. T. Liu, H. Y. Lin, T. H. Chiang, Y. C. Chang, J. Kwo*, and M. Hong*, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), Dung Tua University, Jan 29-31, 2013.

258. “DLTS Measurement for low midgap interfacial trap density in In0.53Ga0.47As MOSCAPs by in-situ atomic-layer-deposited HfO2 passivation”, C. A. Lin, M. C. Hsieh, C. L. Tsai, Y. H. Chang, T. D. Lin, J. F. Chen, M. Hong*, and J. Kwo*,中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), Dung Tua University, Jan 29-31, 2013.

259. “Correlation of SrRuO3 film composition with in pulse laser deposition parameters”, S. Y. Huyan, Chi-nanWu, J.Y. Lee, C.Y. Lin, M. Hong*, and J. Kwo*, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), Dung Tua University, Jan 29-31, 2013.

260. “XRD and XPS research on SrRuO3 thin films: Ruthenium/Strontium composition, c-axis lattice constant and resistivity”, J. Y. Lee, Chi-nan Wu, S. Y. Huyan, C. Y. Lin, M. Hong*, and J. Kwo*, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), Dung Tua University, Jan 29-31, 2013.

261. “STM investigation on MBE-grown In0.53Ga0.47As (001) 4x2 surface and in-situ ALD TEMA-Hf dosed surface”, Y. C. Liu, M. L. Huang, T. D. Lin, Y. T. Liu, W. C. Lee, H. Y. Lin, W. W. Pai, M. Hong* and J. Kwo*, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), Dung Tua University, Jan 29-31, 2013.

262. “Emergent two-dimensional layered materials by molecular beam epitaxy “, H. Y. Lin, Y. H. Lin, P. H. Lin, T. H. Chiang, Y. C. Liu, Y. W. Chen, Y. H. Lee, C. H. Hsu, M. Hong*, and J. Kwo*, Conf. of Northern of American MBE, Oct., 2013, Bamff, Canada.

263. “Epitaxial thin-film growth of perovskite Strontium Ruthenate Ruddlesden-Popper series by Laser MBE dual target deposition”, S. Y. Huyan, C. N. Wu, J. Y. Lee, Y. C. Liu, C. F. Lee, H. Y. Lin, Y. W. Chen, M. Hong* and J. Kwo*, Conf. of Northern of American MBE, Oct., 2013, Bamff, Canada.

264. “Surface passivation of GaSb(100) using MBE-Y2O3 as gate dielectric”, R. L. Chu, W. J. Hsueh, T. H. Chiang, W. C. Lee, H. Y. Lin, G. J. Brown, T. W. Pi, J. I. Chyi, J. Kwo, and M. Hong, 30th North American Molecular Beam Epitaxy Conference (NAMBE), Oct. 6-9, 2013, Bamff, Canada.

265. “Direct Spin Injection into GaAs from Ferromagnetic Fe3Si Films“, H. Y. Hung, C. H. Chiang, B. Z. Syu, J. G. Lin, S. F. Lee, M. Hong*, and J. Kwo*”, Conf. Magnetism and Magnetic Materials, Denver, Nov. 4-8, 2013.

266. “Perfecting high κ/GaSb(100) interface using molecule beam epitaxy Y2O3”, R. L. Chu, W. J. Hsueh, T. H. Chiang, W. C. Lee, H. Y. Lin, T. D. Lin, C. H. Fu, G. J. Brown, T. W. Pi, J. I. Chyi, J. Kwo, and M. Hong, 44th IEEE Semiconductor Interface Specialists Conference (SISC), Virginia, USA, Dec. 5-7, 2013.

2014

267. “ARPES and XPS study of Bi2Se3 and Bi2Te3 thin films: the relationship between chemical composition and doping level on as-grown TI films”, Jian-Feng Li(李健逢), Po-Hao Lin(林柏皓), Hsiao-Yu Lin(林孝于), Cheng-Maw Cheng (鄭澄懋), M. Hong(洪銘輝), and J. Kwo(郭瑞年), 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Chung Hsing University, Taichung, Jan. 21-23, 2014. Excellent poster award.

268. “Epitaxial thin film growth of perovskite Sr2RuO4 by pulsed laser deposition”, S. Y. Huyan(呼延澍元), C. N. Wu(巫啟男), J. Y. Lee(李俊逸), Y. C. Liu(劉有騏), J. F. Lee(李健逢), H. Y. Lin(林孝于), Y. W. Chen(陳昱維), T. L. Hung(洪慈蓮), M. Hong(洪銘輝), and J. Kwo(郭瑞年), 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Chung Hsing University, Taichung, Jan. 21-23, 2014.

269. “Materials Properties of High Quality Bi2Te3 Thin Films by Molecular Beam Epitaxy”, P. H. Lin(林柏皓), C. Y. Lin(林孝于), J. F. Lee(李健逢), Z. K. Zheng(鄭兆凱), M. Hong(洪銘輝), and J. Kwo(郭瑞年), 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Chung Hsing University, Taichung, Jan. 21-23, 2014.

270. “Comparison of methods to extract interface state densities at atomic-layer-deposited high- k dielectric/III-V heterostructures”, Y. T. Fanchiang(范姜宇廷), Y. K. Su(蘇毓凱), K. S. Chen(陳冠雄), Y. C. Chang(張耀中), T. H. Chiang(江宗鴻), J. Kwo(郭瑞年), and M. Hong(洪銘輝), 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Chung Hsing University, Taichung, Jan. 21-23, 2014.

271. “The dependence of spin-injection efficiency on Schottky barrier heights between Fe¬3Si and n-(or p-) GaAs(100)”, B. Z. Syu(許倍準), H.Y. Hung(洪宏宜), T. H. Chiang(江宗鴻), J. G. Lin(林昭吟), S. F. Lee(李尚凡) , M. Hong(洪銘輝), and J. Kwo(郭瑞年), 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Chung Hsing University, Taichung, Jan. 21-23, 2014.

272. “Transport and XPS study of insulator: Bismuth Selenide and Bismuth Telluride”, C. Y. Wang(王澄宇), C. Y. Lin(林孝于), Po-Hao Lin(林柏皓topological), Jian-Feng Li(李健逢), S. F. Lee(李尚凡), M. Hong(洪銘輝), and J. Kwo(郭瑞年), 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Chung Hsing University, Taichung, Jan. 21-23, 2014.

273. “Growth Mechanism of Fe3Si on GaAs(100) and GaAs(111) by Scanning Tunneling Microscopy”, Y. W. Chen(陳昱維), Y. C. Liu(劉有騏), T. H. Chiang(江宗鴻), H. Y. Hung(洪宏宜), M. Hong(洪銘輝), and J. Kwo(郭瑞年), 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Chung Hsing University, Taichung, Jan. 21-23, 2014.

274.“An Investigation of Ni-InGaAs Source/Drain Ohmic Contact for III-V CMOS”, C.H. Fu(傅千驊), W. H. Chang (張文馨), R. L. Chu(朱瑞霖), T. D. Lin(林宗達), T. H. Chiang(江宗鴻), Y. D. Wu(吳彥), J. Kwo(郭瑞年) and M. Hong(洪銘輝), 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Chung Hsing University, Taichung, Jan. 21-23, 2014.

275.“Investigation of Spin Pumping in Fe3Si/GaAs and Fe3Si/Bi2Se3 Bilayer Structure”, H. Y. Hung, T. H. Chiang, H. Y. Lin, B. Z. Syu, J. G. Lin, S. F. Lee, M. Hong, and J. Kwo*, APS March Meeting, Denver, Co, March 3-7, (2014).

276.“Surface morphology evolution of Fe3Si on GaAs(100) and GaAs(111)A – Atomic layer-by-layer growth studied by scanning tunneling microscopy”, Y. C. Liu, Y. W. Chen, T. H. Chiang, H. Y. Hung, Y. H. Lin, C. K. Cheng, C. H. Hsu, T. W. Pi, J. Kwo, and M. Hong, the 18th International MBE conference, Flagstaff, AZ, USA, Sep. 7-12, (2014).

277.“Materials and Physical Properties of Topological Insulator Bi2Te3 Thin Films by Molecular Beam Epitaxy”, P. H. Lin, J. F. Lee, C. Y. Wang, H. Y. Lin, C. K. Cheng, Y. C. Liu, M. Hong, and J. Kwo, the 18th International MBE conference, Flagstaff, AZ, USA, Sep. 7-12, (2014).

278.“Strongly enhanced spin current in topological insulator/ferromagnetic metal heterostructures by spin pumping”, C. N. Wu, Y. H. Lin, Y. T. Fanchiang, H. Y. Hung, H. Y. Lin, P. H. Lin, J. G. Lin, S. F. Lee, M. Hong, and J. Kwo, the 59th Magnetism and Magnetic Materials Conference, Hawaii, Nov., 3-7, (2014).

279.“Direct Determination of Schottky Barrier Heights and Band Bending between Fe3Si and GaAs(100) by In-Situ XPS/UPS, K. Y. Lin, B. Z. Syu, Y. H. Lin, Z. J. Peng, J. F. Lee, C. H. Fu, C. P. Cheng, T. W. Pi, J. Kwo, and M. Hong, 45th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, Dec. 4-6, (2014).

280.“Comparison of MBE-Y2O3 and ALD-Y2O3 passivated n-GaSb(100)”, Y. H. Lin, R. L. Chu*, W. J. Hsueh, K. Y. Lin, T. H. Chiang, C. H. Fu, G. J. Brown, T. W. Pi, J. I. Chyi, J. Kwo, and M. Hong, 45th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, Dec. 4-6, (2014).

2015

281.“The effect of substrates on the materials properties of topological insulator films”, K. H. M. Chen (陳可璇), H. Y. Lin (林孝于), C. Y. Wang (王澄宇), C. K. Cheng (鄭兆凱), X. Q. Zhang (張鋅權), Y. H. Lee (李奕賢), C. M. Cheng (鄭澄懋), M. Hong (洪銘輝), and J. Kwo (郭瑞年), 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Tsing Hua University, Hsinchu, Jan. 28-30, 2015. Excellent poster award.

282.“Single-crystal atomic-layer-deposited Y2O3 on GaAs with high thermal stability and low interfacial trap densities”, K. Chen (陳冠雄), B. Yang (楊博宇), Y. H. Lin (林延勳), K. Y. Lin (林耕雍), S. Y. Wu (吳紹筠), C. K. Cheng (鄭兆凱), T. W. Chang (張從文), C. H. Hsu (徐嘉鴻), J. Kwo (郭瑞年), and M. Hong (洪銘輝), 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Tsing Hua University, Hsinchu, Jan. 28-30, 2015.

283.“Surface morphology evolution of Fe3Si on GaAs(100)-4x6 and GaAs(111)A-2x2 – Atomic layer-by-layer growth studied by scanning tunneling microscopy”, Y. W. Chen (陳昱維), Y. C. Liu (劉有騏), Y. H. Lin (林延勳), C. K. Cheng (鄭兆凱), K. Y. Lin (林耕雍), S. Y. Wu (吳紹筠), T. H. Chiang (江宗鴻), H. Y. Hung (洪宏宜), S. C. Tseng (曾紹欽), C. H. Hsu (徐嘉鴻), T. W. Pi (皮敦文), J. Kwo (郭瑞年), and M. Hong (洪銘輝), 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Tsing Hua University, Hsinchu, Jan. 28-30, 2015.

284.“Atomic layer deposited Y2O3 on GaAs(001)-4x6 - thickness dependence of crystallographic structures and electrical properties and the correlation”, C. K. Cheng (鄭兆凱), S. Y. Wu (吳紹筠), Y. H. Lin (林延勳), K. H. Chen (陳可璇), C. H. Hsu (徐嘉鴻), J. Kwo (郭瑞年), and M. Hong (洪銘輝), 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Tsing Hua University, Hsinchu, Jan. 28-30, 2015.

285.“Investigation of the transport properties of Bi2Se3 films grown on various substrates”, H. Y. Lin, C. Y. Wang, K. H. M. Chen, Y. H. Lin, K. H. Chen, B. Y. Yang, M. Hong, and J. Kwo, 2015 APS meeting, March. 2-6, 2015.

286.“Demonstration of large field effect in topological insulator films via a high-k back gate”, C. Y. Wang, H. Y. Lin, Y. H. Lin, K. H. Chen, B. Y. Yang, K. H. M. Chen, Z. J. Peng, S. F. Lee, M. Hong, and J. Kwo, 2015 APS meeting, San Antonio, TX, March, 2-6, 2015.

287.“Topological insulator thin film research for spintronics”, J. Kwo, International Symposium on Emergent Crystalline Materials(TECEM)/尖端晶體材料聯合實驗室國際學術研討會, Chiao Hsi, Yilan, Taiwan, May 29-30, (2015).

288.“Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high k gate dielectric using a CMOS compatible process”, C. H. Fu, Y. H. Lin, W. C. Lee, T. D. Lin, R. L. Chu, L. K. Chu, P. Chang, M. H. Chen, W. J. Hsueh, S. H. Chen, G. J. Brown, J. I. Chyi*, J. Kwo*, and M. Hong*, INFO Conference, Italy, June, (2015).

289.“Single-crystal atomic layer deposited Y2O3 on GaAs(001) - growth, structural, and electrical characterization”, S. Y. Wu, K. H. Chen, Y. H. Lin, C.K. Cheng, C.H. Hsu*, J. Kwo*, M. Hong*, INFO Conference, Italy, June, (2015).

290.“Interfacial electronic structure of the noble metals on a2-GaAs (001)-2x4 surface”, T. W. Pi, W. S. Chen, Y. T. Cheng, G. J. Wei, C. H. Wei, Y. C. Lin, Y. H. Lin, C. P. Cheng, J. Kwo*, and M. Hong*, submitted to 46th IEEE Semiconductor Interface Specialists Conference (SISC) in Key Bridge Marriott, Arlington, VA, December 2-5, 2015 (2015).

291.“Enhanced ALD-Y2O3 Thin Film Quality and Interface Cleansing Achieved by UHV Annealing for Ⅲ-Ⅴ Passivation”, K. Y. Lin, Y. H. Lin, K. H. Chen, L. B. YoungC. H. Fu, C. P. Cheng, T. W. Pi, J. Kwo*, and M. Hong*, submitted to 46th IEEE Semiconductor Interface Specialists Conference (SISC) in Key Bridge Marriott, Arlington, VA, Dec.2-5, 2015 (2015).

2016

292.“Detection of current induced spin torque ferromagnetic resonance in ferromagnetic insulator/heavy metal heterostructures”, Y. C. Liu, C. N. Wu, Y. T. Fan-Chiang, L. C. Chang, S. F. Lee, M. Hong, and J. Kwo, 13th Joint MMM-Intermag Conference, San Diego, Jan. 11-15, 2016.

293.“Structural analysis of Bi2Se3 thin films on various substrates”, C. K. Cheng, H. Y. Lin, K. H. Chen, X. Q. Zhang, Y. H. Lee, C. H. Hsu, J. Kwo, and M. Hong, 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Sun Yat-sen University, Kaohsiung, Jan. 25-27, 2016.

294.“Surface passivation of GaAs(001) using atomic-layer-deposition Y2O3 and ultra-high vacuum annealing”, T.W. Chang, K. Y. Lin, C. H. Fu, S. H. Chen, Y. H. Lin, H. W. Wan, L. B. Young, G. J. Lu, C. T. Wu, J. Kwo, and M. Hong, 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Sun Yat-sen University, Kaohsiung, Jan. 25-27, 2016.

295.“High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide semiconductor field-effect- transistors by in-situ atomic-layer-deposited Y2O3”, M. H. Chen, J. Liu, S. H. Chen, Y. H. Lin, H. W. Wan, L. B. Young, G. J. Lu, J. Kwo, and M. Hong, 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Sun Yat-sen University, Kaohsiung, Jan. 25-27, 2016.

296.“Formation of single-crystal hexagonal Yttrium Aluminum Perovskite on GaAs(111)A utilizing ALD-Y2O3/Al2O3 multilayer with post-deposition annealing”, L. B. Young, C. K. Cheng, G. J. Lu, Y. H. Lin, H. W. Wan, C. H. Hsu, J. Kwo, M. Hong, 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Sun Yat-sen University, Kaohsiung, Jan. 25-27, 2016.

297.“Mechanism of forming perovskite and garnet structures using atomic-layer deposited Y2O3-Al2O3”, G. J. Lu, C. K. Cheng, L. B. Young, Y. H. Lin, H. W. Wan, C. H. Hsu, J. Kwo, and M. Hong, 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Sun Yat-sen University, Kaohsiung, Jan. 25-27, 2016.

298.“In-situ Atomic-Layer-Deposited Al2O3 on In0.53Ga0.47As – Push of High Performance Inversion-Channel MOSFET”, H. W. Wan, Y. C. Chang, T. D. Lin, M. H. Chen, K. Y. Lin, S. H. Chen, T. W. Pi, J. Kwo, M. Hong, 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Sun Yat-sen University, Kaohsiung, Jan. 25-27, 2016.

299.“Atomic Layer Deposited Rare Earth Oxide Y2O3 on n-GaSb(001)”, Y. H. Lin*, K. Y. Lin*, L. B. Young, K. H. Chen, C. H. Fu, W. J. Hsueh, G. J. Brown, T. W. Pi, J. I. Chyi, J. Kwo, and M. Hong, 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Sun Yat-sen University, Kaohsiung, Jan. 25-27, 2016.

300.“Effect of Ultrahigh Vacuum Annealing on ALD-Y2O3/GaAs Heterostructure Studied by in-situ X-ray Photoelectron Spectroscopy”, K. Y. Lin, C. H. Fu, K. H. Chen, Y. H. Lin, L. B. Young, J. Kwo, and M. Hong, 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Sun Yat-sen University, Kaohsiung, Jan. 25-27, 2016.

301.“Interfacial Electronic Structure of Al on p-GaAs(001): A Synchrotron-Radiation Photoemission Study of Schottky Barrier Height”, Yi-Ting Cheng (鄭伊婷), Wan-Sin Chen (陳婉馨), Guo-Jhen Wei (魏國珍), Hsin Wang(王馨), Ching-Hsuan Wei (魏竟軒), Yu-Cheng Lin (林育正), Yen-Hsun Lin (林延勳), Tun-Wen Pi (皮敦文), Jueinai Kwo (郭瑞年), Minghwei Hong(洪銘輝), and Chiu-Ping Cheng(鄭秋平), 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Sun Yat-sen University, Kaohsiung, Jan. 25-27, 2016.

302.“Detection of topological surface states by spin pumping at room temperature”, Y. T. Fanchiang, H. Y. Lin, K. S. Chen, S. R. Yang, C. K. Cheng, C. N. Wu, S. F. Lee, M. Hong* and J. Kwo*, APS March Meeting, Baltimore, Maryland, March 14-18, 2016.

303.“High quality topological insulator thin films grown by molecular beam epitaxy using MoS2 monolayer as buffer layer, K. H. Chen, H. Y. Lin, C. Y. Wang, S. R. Yang, C. K. Cheng, X. Q. Zhang, Y. H. Lee, M. Hong*, and J. Kwo*, APS March Meeting, Baltimore, Maryland, March 14-18, 2016.

304.“High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited Al2O3/Y2O3 and TaN/TiN gate stacks”, M. H. Chen, J. Liu, Y. H. Lin, H. W. Wan, L. B. Young, G. J. Lu, S. H. Chen, J. Kwo, and M. Hong, Symposium on Nano Device Technology (SNDT), National Nano Device Laboratory (NDL), Hsinchu, Taiwan, May 12-13, 2016.

305.“Effective surface passivation of GaAs(001) using in-situ atomic-layer-deposited Y2O3”, T. W. Chang, K. Y. Lin, C. H. Fu, S. H. Chen, Y. H. Lin, H. W. Wan, L. B. Young, G. J. Lu, J. Kwo, and M. Hong, Symposium on Nano Device Technology (SNDT), National Nano Device Laboratory (NDL), Hsinchu, Taiwan, May 12-13, 2016.

306.“Novel materials and spin transport properties of topological insulator-based heterostructures”, J. Kwo, International Symposium on Emergent Crystalline Materials(TECEM)/尖端晶體材料聯合實驗室國際學術研討會, Chiao Hsi, Yilan, Taiwan, May 27-28, (2016).

307.“Dielectric oxides grown by atomic layer deposition (ALD) on single-crystal InGaAs surfaces studied by synchrotron radiation photoemission”, T.-W. Pi, T. D. Lin, K. Y. Lin, Y. H. Lin, H. W. Wan, Y. H. Chang, J. Kwo, and M. Hong, Compound Semiconductor Week, Toyama International Conference Center, Toyama, Japan, June 26-30, 2016.

308.“High-k oxides on pristine singe crystal III-V surfaces studied by synchrotron radiation photoemission”, T. W. Pi, C. P. Cheng, W. S. Chen, K. Y. Lin, S. Wang, Y. H. Lin, Y. T. Cheng, J. R. Kwo, and M. Hong, International Union of Materials Research Societies (IUMRS) – International Conference on Electronic Materials (ICEM), Singapore, July 4-8, 2016.

309.“Low interfacial trap densities in single crystal atomic-layer-deposited Y2O3 on GaAs(001)”, Keng-Yung Lin, Tsung-Wen Chang, Chao-Kai Cheng, Yen-Hsun Lin, Lawrence Young, Chun-Ting Wu, Chien-Hua Fu, Kuan-Hsiung Chen, Szu-Hung Chen, Chia-Hung Hsu, J. Raynien Kwo, Minghwei Hong, American Vacuum Society - 16th International Conference on Atomic Layer Deposition, Ireland, July 24-27, 2016.

310.“Synchrotron radiation photoemission study of dielectric oxides grown by atomic layer deposition (ALD) on single-crystal (In)GaAs surfaces”, T. W. Pi, K. Y. Lin, T. D. Lin, Y. H. Lin, H. W. Wan, Y. H. Chang, C. P. Cheng, J. Kwo, M. Hong, American Vacuum Soc. - 16th Intl. Conf. on Atomic Layer Deposition, Dublin, Ireland, July 24-27, 2016.

311.“Formation of Yttrium Aluminum Perovskite on GaAs and GaN utilizing ALD-Y2O3/Al2O3 nano-multilayer”, L. B. Young, G. J. Lu, C. K. Cheng, K. Y. Lin, Y. H. Lin, H. W. Wan, C. H. Hsu, J. Kwo, and M. Hong, American Vacuum Society - 16th Intl. Conf. on Atomic Layer Deposition, Dublin, Ireland, July 24-27, 2016.

312.“High quality topological insulator thin films and novel two dimensional materials grown by MBE”, H. Y. Lin, K. H. Chen, S. R. Yang, S. W. Huang, C. C. Chen, Y. H. Yen, C. K. Cheng, X. Q. Zhang, Y. H. Lee, G. Hoffmann, S. C. Tseng, C. M. Cheng, C. H. Hsu, M. Hong, J. Raynien Kwo, Max Planck-Postech-Hsinchu Workshop on complex phase materials, Dresden, Germany, August 10-11, 2016.

313.“Synchrotron radiation photoemission study of high k dielectrics on III-Vs and energy barrier for metal- semiconductor contacts”, K. Y. Lin, Y. H. Lin, H. W. Wan, W. S. Chen, Y. T. Cheng, C. P. Cheng*, T. W. Pi*, J. Kwo*, and M. Hong*, Max Planck-Postech-Hsinchu Workshop on complex phase materials, Dresden, Germany, August 10-11, 2016.

314.“The Precision Adjustment Holder for Montel Mirrors”, Bo-Yi Chen, Gung-Chian Yin, Shi-Hung Chang, Huang-Yeh Chen, Chien-Yu Lee, Bi-Hsuan Lin, Shao-Chin Tseng, Jian-Xing Wu, Minghwei Hong, J. Raynien Kwo, and Mau-Tsu Tang, MEDSI Conference, Barcelona, Europe/Spain, September 11-16, 2016.

315.“Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance”, W. S. Chen, Y. H. Lin, Y. T. Cheng, K. Y. Lin, T. W. Chang, H. W. Wan, C. P. Cheng, T. W. Pi, J. Kwo, and M. Hong, 47th IEEE Semiconductor Interface Specialists Conference , San Diego, CA, December 8-10, 2016.

316.“Epi Ge(001)-2×1 surface aimed for high-k deposition: An electronic-structure study”, Y. T. Cheng, W. S. Chen, Y. H. Lin, H. W. Wan, K. Y. Lin, S. Wang, C. P. Cheng, T. W. Pi, J. Kwo, and M. Hong, 47th IEEE Semiconductor Interface Specialists Conference , San Diego, CA, December 8-10, 2016.

317.“Determination of Schottky barrier height prior to metal formation”, C. P. Cheng, W. S. Chen, K. Y. Lin, G. J. Wei, Y. T. Cheng, Y. H. Lin, H. W. Wan, T. W. Pi, R. T. Tung, J. Kwo, and M. Hong, 47th IEEE Semiconductor Interface Specialists Conference, San Diego, CA, December 8-10, 2016.

2017

318.“Topological Insulator thin films grown on α-Al2O3 stepped terraces by molecular beam epitaxy”, C. C. Chen, K. H. Chen, H. Y. Lin, S. R. Yang, C. K. Cheng, C. M. Cheng, M. Hong, and J. Kwo, 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), Tamkang University, Taipei, Jan. 16-18, 2017.

319.“Ferromagnetic resonance study of interfacial exchange coupling in topological insulator/ferrimagnetic insulator heterostructure”, Y. T. Fanchiang, H. Y. Lin, C. C. Tseng, K. S. Chen, C. N. Wu, C. K. Cheng, S. F. Lee, J. G. Lin, M. Hong and J. Kwo,中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), Tamkang University, Taipei, Jan. 16-18, 2017.

320.“Investigation of the electronic structure of stanene on Bi2Te3 by ARPES”, H. Y. Lin, K. H. Chen, S. W. Huang, C. C. Chen, J. W. Liu, W. C. Fan, W. C. Chou, C. M. Cheng, M. Hong and J. Raynien Kwo, 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), Tamkang University, Taipei, Jan. 16-18, 2017.

321.“High quality TmIG films with tunable perpendicular magnetic anisotropy grown by sputtering”, C. C. Tseng, C. N. Wu, S. L. Yeh, K. Y. Lin, C. K. Cheng, Y. T. Fanchiang, M. Hong and J. Kwo, 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), Tamkang University, Taipei, Jan. 16-18, 2017.

322.“Epitaxial Growth of Topological Insulator Bi2Te3 Thin Films on BaF2 (111) Substrates by MBE”, S. W. Huang, H. Y. Lin, S. R. Yang, K. H. Chen, C. K. Cheng, M. Hong, J. Raynien Kwo, 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), Tamkang University, Taipei, Jan. 16-18, 2017.

323.“Synchrotron Radiation Photoemission Study Of Single Phase Ge(001)-2X1 Surface”, Yi-Ting Cheng, Wan-Sin Chen, Yen-Hsun Lin, Hsien-Wen Wan, Keng-Yung Lin, Sin Wang, Chiu-Ping Cheng, Tun-Wen Pi, Jueinai Kwo, Minghwei Hong, 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), Tamkang University, Taipei, Jan. 16-18, 2017.

324.“High quality TmIG films with perpendicular magnetic anisotropy grown by sputtering”, C. N. Wu, C. C. Tseng, S. L. Yeh, K. Y. Lin, C. K. Cheng, Y. T. Fanchiang, M. Hong and J. Kwo, APS March Meeting, New Orleans, LA, March 13-17, 2017.

325.“Ferromagnetic resonance study of interlayer exchange coupling in topological insulator/ferrimagnetic insulator heterostructure”, Y. T. Fanchiang, H. Y. Lin, C. C. Tseng, K. S. Chen, C. N. Wu, C. K. Cheng, S. F. Lee, J. G. Lin, M. Hong and J. Kwo, APS March Meeting, New Orleans, LA, March 13-17, 2017.

326.“Electronic property and spin transport of topological insulator-based heterostructures”, C. N. Wu, Y. C. Liu, H. Y. Lin, K. H. M. Chen, S. R. Yang, C. C. Tseng, J. S. Wei, C. C. Chen, S. W. Huang, S. L. Yeh, Y. H. Yen, C. W. Chao, L. U. Liang, Germar Hoffmann, Y. T. Fanchiang, Y. H. Lin, Wesley Lin, C. K. Cheng, C. M. Cheng, C. H. Hsu, T. R. Chang, S. F. Lee, J. G. Lin, M. Hong, and J. Raynien Kwo, Invited Poster, TCECM, Miaoli, Taiwan, May 24-25, 2017.

327.“Enhancement of dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y2O3/Al2O3 on GaAs (001)”, K. Y. Lin, L. B. Young, C. K. Cheng, K. H. Chen, Y. H. Lin, H. W. Wan, R. F. Cai, S. C. Lo, M. Y. Li, J. Kwo, M. Hong, 20th Conference on “Insulating Films on Semiconductors”, June 27th – 30th, 2017 in Potsdam, Germany.

328.“Analysis of border and interfacial traps in ALD-Y2O3 and -Al2O3 on GaAs via electrical responses - a comparative study”, T. W. Chang, K. Y. Lin, Y. H. Lin, L. B. Young, J. Kwo, M. Hong, 20th Conference on “Insulating Films on Semiconductors”, June 27th – 30th, 2017 in Potsdam, Germany.

329.“Ultra-high thermal stability and extremely low Dit on HfO2/p-GaAs(001) interface”, H. W. Wan, Y. H. Lin, K. Y. Lin, T. W. Chang, J. Kwo, M. Hong, 20th Conference on “Insulating Films on Semiconductors”, June 27th – 30th, 2017 in Potsdam, Germany.

330.“Single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs (111)A and (001) using atomic layer deposition”, C. K. Cheng, L. B. Young, K. Y. Lin, Y. H. Lin, H. W. Wan, G. J. Lu, M. T. Chang, R. F. Cai, S. C. Lo, M. Y. Li, C. H. Hsu, J. Kwo, M. Hong, 20th Conference on “Insulating Films on Semiconductors”, June 27th – 30th, 2017 in Potsdam, Germany.

331.“Interface dipole of high-k Y2O3 on GaAs (001)-4x6 attained using cycle-by-cycle ALD and synchrotron radiation photoelectron spectroscopy”, W. S. Chen, K. Y. Lin, L. B. Young, Y. T. Cheng, Y. H. Lin, H. W. Wan, C. Y. Yang, C. P. Cheng, T. W. Pi, J. Kwo, and M. Hong, 17th Intl. Conf. on Atomic Layer Deposition, Denver, Colorado, USA, July 15-18, 2017.

332.“Elucidation of distinct electric characteristics of ALD oxides on highly ordered GaAs (001) and In0.53Ga0.47As(001) surfaces using synchrotron radiation photoelectron spectroscopy”, Y. T. Cheng, W. S. Chen, K. Y. Lin, L. B. Young, Y. H. Lin, H. W. Wan, C. P. Cheng, T. W. Pi, J. R. Kwo, and M. Hong, 17th Intl. Conf. on Atomic Layer Deposition, Denver, Colorado, USA, July 15-18, 2017.

333.“Great enhancement of dielectric constant via high temperature annealing ALD bi-layered oxides", K. Y. Lin, L. B. Young, C. K. Cheng, Y. H. Lin, H. W. Wan, R. F. Cai, S. C. Lo, J. Kwo, and M. Hong, 17th Intl. Conf. on Atomic Layer Deposition, Denver, Colorado, USA, July 15-18, 2017.

334.“ALD-Y2O3/GaAs(001) having extremely high thermal stability at 900 °C and very low interfacial trap densities - comparative studies with ALD Al2O3 and HfO2 gate dielectrics” Y. H. Lin, H. W. Wan, L. B. Young, C. K. Cheng, K. Y. Lin, Y. T. Cheng, W. S. Chen, C. P. Cheng, T. W. Pi, J. R. Kwo, and M. Hong, 17th Intl. Conf. on Atomic Layer Deposition, Denver, Colorado, USA, July 15-18, 2017.

335.“Atomic layer deposited single crystal high-k Y-doped cubic HfO2 on GaAs(001) utilizing HfO2/Y2O3 super-cycles”, L. B. Young, C. K. Cheng, Y. H. Lin, K. Y. Lin, C. H. Hsu, J. R. Kwo, and M. Hong, 17th Intl. Conf. on Atomic Layer Deposition, Denver, Colorado, USA, July 15-18, 2017.

336.“Perfecting single-crystal ternary perovskite YAlO3 epitaxial growth on GaAs (111)A utilizing atomic layer deposited sub-nano-laminated Y2O3/Al2O3”, L. B. Young, C. K. Cheng, K. Y. Lin, Y. H. Lin, H. W. Wan, M. Y. Li, R. F. Cai, S. C. Lo, C. H. Hsu, J. R. Kwo, and M. Hong, 17th Intl. Conf. on Atomic Layer Deposition, Denver, Colorado, USA, July 15-18, 2017.

337.“Strongly exchange-coupled and surface-state-modulated magnetization dynamics in Bi2Se3/YIG heterostructures” , Y. T. Fanchiang, K. H. Chen, C. C. Tseng, C. C. Chen, C. K. Cheng, C. N. Wu, S. F. Lee*, M. Hong*, and J. Kwo*, 62th MMM conference, Pittsburg, Nov. 6-10, 2017.

338.“High-Quality Single-Crystal Thulium Iron Garnet Films with Tunable Perpendicular Magnetic Anisotropy by Off-Axis Sputtering”, C. N. Wu, C. C. Tseng, S. R. Yang, S. L. Yeh, K. Y. Lin, C. K. Cheng, Y. T. Fanchiang, M. Hong* and J. Kwo*, 62th MMM conference, Pittsburg, Nov. 6-10, 2017.

339.“Temperature-dependent barrier heights measured in high-k/GaAs – elucidating capacitance- voltage frequency dispersion for proper determination of border traps”, K. Y. Lin, T. W. Chang, H. W. Wan, Y. J. Hong, L. B. Young, J. Kwo*, M. Hong*, 48th Semiconductor Interface Specialists Conference (SISC), San Diego, CA, USA, Dec. 6-9, 2017.

2018

340.“High quality α-Sn thin film on InSb(001)”, K. H. M. Chen, H. Y. Lin, K. Y Lin, C. K. Cheng, S. W. Huang, J. S. Wei, S. R. Yang, C. M. Cheng, C. H. Hsu, M. Hong, and J. Kwo, 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Taiwan University, Taipei, Jan. 24-26, 2018.

341.“Demonstration of Large Field Effect in Topological Insulator Based Top-gating Device”, J. S. Wei, S. R. Yang, K. H. Chen, C. C. Chen, Y. H. Lin, L. B. Young, K. Y. Lin, T. W. Chang, M. Hong, and J. Kwo, 中華民國物理年會 (Annual Meeting of the Physical Society of Taiwan), National Taiwan University, Taipei, Jan. 24-26, 2018.

342.“Time Reversal Symmetry Breaking in Topological Insulator/Magnetic Insulator Heterostructures Revealed by the Negative Magnetoresistance” , S. R. Yang, K. H. M. Chen, C. C. Chen, C. N. Wu, C. C. Tseng, C. K. Cheng, M. Hong*, and J. Kwo*, 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Taiwan University, Taipei, Jan. 24-26, 2018.

343.“1000°C Thermal Stability and Low Trap Densities Achieved in HfO2/GaAs(001)” , C. Y. Yang, H. W. Wan, Y. H. Lin, J. Kwo, M. Hong, 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Taiwan University, Taipei, Jan. 24-26, 2018.

344.“Ferromagnetic resonance and spin pumping in transferred topological insulator on ferrimagnetic insulator heterostructures ”, C. C. Tseng, Y. C. Liu, C. C. Chen, S. R. Yang, Y. T. Fanchiang, C. K. Cheng, S. F. Lee, J. G. Lin, M. Hong and J. Kwo, 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Taiwan University, Taipei, Jan. 24-26, 2018.

345.“The attainment of high quality topological insulator Bi2Se3 thin films grown on ferromagnetic insulator garnets”, C. C. Chen, K. H. M. Chen, H. Y. Lin, C. N. Wu, C. C. Tseng, M. X. Guo, S. R. Yang, J. S. Wei, C. K. Cheng, Y. T. Fanchiang, C. H. Hsu, M. Hong, and J. Kwo, 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Taiwan University, Taipei, Jan. 24-26, 2018.

346.“Topological surface states mediated interfacial exchange coupling in Bi2Se3/YIG”, Y. T. Fanchiang, K. H. M. Chen, C. C. Tseng, C. C. Chen, C. K. Cheng, S. R. Yang, C. N. Wu, S. F. Lee, M. Hong, and J. Kwo, 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Taiwan University, Taipei, Jan. 24-26, 2018.

347.“Comparative Study of Trap Response Inside Conduction Band of GaAs Passivated with High Dielectric Constant Oxides of Y2O3 and HfO2”, H. W. Wan, T. W. Chang, K. Y. Lin, L. B. Young, J. Kwo, M. Hong, 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Taiwan University, Taipei, Jan. 24-26, 2018.

348.“Epitaxial Growth of Y2O3-doped High-K Cubic HfO2 on GaAs Utilizing ALD-HfO2/Y2O3 Super-Cycles”, L. B. Young, C. K. Cheng, Y. H. Lin, K. Y. Lin, C. H. Hsu, J. Kwo, M. Hong, 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Taiwan University, Taipei, Jan. 24-26, 2018.

349.“Epitaxy of single-crystal hexagonal perovskite YAlO3 on Y2O3/GaAs(111)A”, C. K. Cheng, L. B. Young, K. Y. Lin, Y. H. Lin, H. W. Wan, R. F. Cai, S. C. Lo, C. H. Hsu, J. Kwo, and M. Hong, 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Taiwan University, Taipei, Jan. 24-26, 2018.

350.“Low interfacial trap densities and high thermal stability of Y2O3 on p-In0.1Ga0.9As" , J. H. Huang, H. W. Wan , C. Y. Yang, W. S. Chen, C. K. Cheng, Y. H. Lin , J. Kwo* , M. Hong*, 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Taiwan University, Taipei, Jan. 24-26, 2018.

351.“Spin pumping in transferred topological insulator on ferrimagnetic insulator and metal/ ferrimagnetic insulator”, C. C. Tseng, Y. C. Liu, C. C. Chen, S. R. Yang, Y. T. Fanchiang, C. K. Cheng, S. F. Lee, J. G. Lin, M. Hong and J. Kwo, APS March meeting, Los Angeles, USA, Mar. 5-9, 2018.

352.“Time Reversal Symmetry Breaking in Topological Insulator/Magnetic Insulator Heterostructures Revealed by the Negative Magnetoresistance”, S. R. Yang, K. H. M. Chen, C. C. Chen, C. N. Wu, C. C. Tseng, C. K. Cheng, M. Hong*, and J. Kwo*, APS March meeting, Los Angeles, USA, Mar. 5-9, 2018.

353.“Effective passivation of GaAs(001) by HfO2 with attainment of superior thermal budget of 900oC”, C.Y. Yang, H. W. Wan, Y. H. Lin, J. Kwo, and M. Hong, 2018 25th SNDT Symposium on Nano Device Technology, National Nano Device Laboratories, Hsinchu, Taiwan, April. 20, 2018.

354.“Low interfacial trap densities and high thermal stability of Y2O3 on In0.1Ga0.9As(001)”, J. H. Huang, H. W. Wan, Y. H. Lin, C. Y. Yang, J. Kwo, and M. Hong, 2018 25th SNDT Symposium on Nano Device Technology, National Nano Device Laboratories, Hsinchu, Taiwan, April. 20, 2018.

355.“Spin transport and spin-to-charge current conversion in Bi2Se3/Au heterostructure, Y. T. Fanchiang, C. C. Tseng, Y. C. Liu, C. C. Chen, J. G. Lin*, S. F. Lee*, M. Hong*, and J. Kwo*, 21st International Conference on Magnetism, July 16-20, 2018, San Francisco, CA.

356.“Spin-orbit torque ferromagnetic resonance in transferred-topological insulator/normal metal/ferromagnetic metal heterostructure”, Y. C. Liu, C. C. Chen, S. R. Young, L. J. Chang, S. F. Lee*, M. Hong* and J. Kwo*, 21st International Conference on Magnetism, July 16-20, 2018, San Francisco, CA.

357.“Spin transport and spin-to-charge current conversion in Bi2Se3/Au-based heterostructure”, Y. C. Liu, Y. T. Fanchiang, C. C. Tseng, C. C. Chen, J. G. Lin*, S. F. Lee*, M. Hong*, and J. Kwo*, the 23rd International Colloquium on Magnetic Films and Surfaces (ICMFS-2018), UC Santa Cruz, CA, July 22-27, 2018.

358.“Magnetic proximity effect induced negative magnetoresistance in Bi2Se3/thulium iron garnet heterostructures”, S. R. Yang, C. C. Chen, C. C. Tseng, Y. T. Fanchiang, K. M. H. Chen, C. N. Wu, C. K. Cheng, M. Hong*, and J. Kwo*, the 23rd International Colloquium on Magnetic Films and Surfaces (ICMFS-2018), UC Santa Cruz, CA, July 22-27, 2018.

359.“Growth Mechanism of High-k Y2O3 on GaAs(001)-4×6 using in-situ Cycle-by-Cycle ALD and Synchrotron Radiation Photoelectron Spectroscopy”, C. P. Cheng, W. S. Chen, Y. T. Cheng, L. B. Young, H. W. Wan, C. Y. Yang, K. Y. Lin, T. W. Pi*, J. Kwo*, and M. Hong*, 18th Intl. Conf. on Atomic Layer Deposition, Incheon, South Korea, July 29 – August 1, 2018.

360.“Single-crystal Ternary Perovskite YAlO3 Epitaxial Growth on GaAs and GaN via Y2O3 Template: Overcoming a Large Film/Substrate Lattice Mismatch”, L. B. Young, C. K. Cheng, K. Y. Lin, Y. H. Lin, H. W. Wan, R. F. Cai, S. C. Lo, M. Y. Li, C. H. Hsu*, J. Kwo*, and M. Hong*, 18th Intl. Conf. on Atomic Layer Deposition, Incheon, South Korea, July 29 – August 1, 2018.

361.“High quality topological material α-Sn thin film on InSb(001)”, K. H. M. Chen, H. Y. Lin, C. K. Cheng, K. Y. Lin, J. S. Wei, S. W. Huang, S. R. Yang, Y. C. Liu, C. M. Cheng, C. H. Hsu, M. Hong*, and J. Kwo*, 20th International Conference on Molecular Beam Epitaxy, Shanghai, China, Sep. 2-7, 2018.

362.“Attainment of high quality topological insulator Bi2Se3 thin films grown on rare earth iron garnets”, C. C. Chen, K. H. M. Chen, H. Y. Lin, C. N. Wu, C. C. Tseng, Y. T. Fanchiang, M. X. Guo, S. R. Yang, J. S. Wei, C. K. Cheng, C. H. Hsu*, M. Hong*, and J. Kwo*, 20th International Conference on Molecular Beam Epitaxy, Shanghai, China, Sep. 2-7, 2018.

363.“Interfacial anchoring of oxides on pristine GaAs for achieving low Dit and high temperature thermal stability”, H. W. Wan, W. S. Chen, L. B. Young, Y. H. Lin, T. W. Pi*, J. Kwo*, and M. Hong*, 20th International Conference on Molecular Beam Epitaxy, Shanghai, China, Sep. 2-7, 2018.

364.“Initial growth mechanism of MBE oxides on (In)GaAs investigated by in-situ synchrotron radiation photoemission”, W. S. Chen, K. Y. Lin, Y. H. Lin, H. W. Wan, T. W. Pi*, J. Kwo*, and M. Hong*, 20th International Conference on Molecular Beam Epitaxy, Shanghai, China, Sep. 2-7, 2018.

365.“The Interface Study of Epitaxial Hexagonal Perovskite YAlO3 Grown on GaAs(111)”, Ren-Fong Cai, Shen-Chuan Lo, Chao-Kai Cheng, Lawrence Boyu Young, Yen-Hsun Lin, Minghwei Hong and Jueinai Kwo, the 19th International Microscopy Congress (IMC19), International Convention Center, Sydney, September 9-14, 2018.

366.“ALD-Y2O3 on GaAs(001)-4×6 - an in-situ atomic-scale study of growth mechanism using synchrotron radiation photoemission”, W. S. Chen (陳婉馨), K. Y. Lin (林耕雍), L. B. Young (楊博宇), Y. T. Cheng (鄭伊婷), Y. H. Lin (林延勳), H. W. Wan (萬獻文), C. Y. Yang (楊承曄), C.-P. Cheng (鄭秋平), T. W. Pi (皮敦文), J. Kwo (郭瑞年), and M. Hong (洪銘輝), the 24th Users’ Meeting and Workshops, National Synchrotron Radiation Research Center, Hsinchu, Taiwan, Sept. 11-13, 2018.

367.“A unique surface electronic structure of epi Ge(001)-2x1”, Y. T. Cheng (鄭伊婷), W. S. Chen (陳婉馨), Y. H. Lin (林延勳), H. W. Wan (萬獻文), K. Y. Lin (林耕雍), C.-P. Cheng (鄭秋平), T. W. Pi (皮敦文), J. Kwo (郭瑞年), and M. Hong(洪銘輝), the 24th Users’ Meeting and Workshops, National Synchrotron Radiation Research Center, Hsinchu, Taiwan, Sept. 11-13, 2018.

368.“Stress-induced perpendicular magnetic anisotropy in single crystal TmIG films”, C. K. Cheng (鄭兆凱), C. C. Tseng (曾俊智), C. N. Wu (巫啟男), K. Y. Lin (林耕雍), S. L. Yeh (葉松霖), Y. T. Fanchiang (范姜宇廷), C. H. Hsu (徐嘉鴻), J. Kwo (郭瑞年), and M. Hong (洪銘輝), the 24th Users’ Meeting and Workshops, National Synchrotron Radiation Research Center, Hsinchu, Taiwan, Sept. 11-13, 2018.

369.“Single-crystal ternary perovskite YAlO3 grown on GaAs and GaN: overcoming a large lattice mismatch via a Y2O3 template”, L. B. Young (楊博宇), C. K. Cheng (鄭兆凱), K. Y. Lin (林耕雍), Y. H. Lin (林延勳), H. W. Wan (萬獻文), R. F. Cai (蔡任豐), S. C. Lo (羅聖全), M. Y. Li (李美儀), C. H. Hsu (徐嘉鴻), J. Kwo (郭瑞年), and M. Hong (洪銘輝), the 24th Users’ Meeting and Workshops, National Synchrotron Radiation Research Center, Hsinchu, Taiwan, Sept. 11-13, 2018.

2019

370.“Angle-resolved photoemission spectroscopy system ultra-high vacuum connected to advanced thin film growth for in-situ characterization”, K. Y. Lin, H. Y. Lin, S. W. Huang, C. M. Cheng, J. Kwo and M. Hong, 台灣物理年會 (Taiwan Physical Society annual meeting), National Chiao Tung University, Hsinchu, Jan. 23-25, 2019.

371.“Detection of proximity-induced exchange gap of topological surface states in topological insulator-magnetic insulator heterostructures", S. R. Yang, Y. T. Fanchiang, C. C. Chen, C. C. Tseng, Y. C. Liu, M. X. Guo, M. Hong, S. F. Lee, and J. Kwo, 台灣物理年會 (Taiwan Physical Society annual meeting), National Chiao Tung University, Hsinchu, Jan. 23-25, 2019.

372.“Room-temperature anomalous Hall effect in bulk-insulating topological insulators (Bi,Sb)2Te3 on thulium iron garnets”, C. C. Chen, J. S. Wei, S. R. Yang, M. X. Guo, C. K. Cheng, S. W. Huang, K. Y. Lin, K. H. M. Chen, Y. T. Fanchiang, M. Hong, and J. Kwo, 台灣物理年會 (Taiwan Physical Society annual meeting), National Chiao Tung University, Hsinchu, Jan. 23-25, 2019.

373.“Al-gated Al2O3/HfO2/p-Ge MOSCAPs in greatly reducing C-V Hysteresis and Oxide Defect Density”, Y. J. Hong, H. W. Wan, Y. T. Cheng, J. Kwo and M. Hong, 台灣物理年會 (Taiwan Physical Society annual meeting), National Chiao Tung University, Hsinchu, Jan. 23-25, 2019.

374.“Photoemission study of topological insulator grown on ferromagnetic insulator heterostructures”, S. W. Huang, K. Y. Lin, C. C. Chen, M. X. Guo, C. K. Cheng, C. M. Cheng, M. Hong, and J. Kwo,台灣物理年會 (Taiwan Physical Society annual meeting), National Chiao Tung University, Hsinchu, Jan. 23-25, 2019.

375.“Spin-Orbit torque ferromagnetic resonance in transferred-topological insulator/normal metal/ferromagnetic metal heterostructure”, Y. C. Liu(劉有騏), C. C. Chen (陳俊嘉), S. R. Young(楊尚融), S. W. Huang (黃聖文), L. J. Chang (張良君), S. F. Lee*(李尚凡), M. Hong* (洪銘輝), and J. Kwo* (郭瑞年), 台灣物理年會 (Taiwan Physical Society annual meeting), National Chiao Tung University, Hsinchu, Jan. 23-25, 2019.

376.“BTI Characterization of MBE Si-cap Ge Gate Stack and Defect Reduction via Forming Gas Annealig”, H. W. Wan, Y. J. Hong, Y. T. Cheng, J. Kwo, and M. Hong, 2019 IEEE International Reliability Physics Symposium, Monterey Bay, California on March 31 to April 3, 2019.

377.“Fundamental understaing of oxide defects in HfO2 and Y2O3 on GaAs(001) with high thermal stability”, H. W. Wan, Y. J. Hong, J. Liu, L. B. Young, Y. H. Lin, J. Kwo, and M. Hong, 2019 IEEE International Reliability Physics Symposium, Monterey Bay, California on 3/31 – 4/ 3, 2019.

378.“Manifestation of exchange gap in band structure of topological insulator/magnetic insulator heterostructures in magneto-transport measurements”, Y. T. Fanchiang, S. R. Yang, C. C. Chen, C. C. Tseng, Y. C. Liu, M. X. Guo, M. Hong, S. F. Lee, and J. Kwo, the Joint European Magnetic Symposia (JEMS) in Uppsala, Sweden Aug. 26-30, 2019.

379.“Perfection of hetero-interfaces in enabling high-performance electronic/spintronic/photonic devices and beyond Moore`s Law”, Minghwei Hong, J. Raynien Kwo, NTU, and NTHU, Max Planck-Postech-Hsinchu Workshop on Complex phase Materials, Sep 4-6, 2019.

380.“Evolution of the band structure of α-Sn (001) thin film on InSb(001)”, Ko-Hsuan (Mandy) Chen, M. Hong, J. Kwo, NTHU, Hsinchu, Max Planck-Postech-Hsinchu Workshop on Complex phase Materials, Sep 4-6, 2019.

381.“Band structure study of topological material strained α-Sn on InSb(001) and (111)B”, Keng-Yung (Wesley) Lin, J. Kwo, M. Hong, NTU, Taipei, Max Planck-Postech-Hsinchu Workshop on Complex phase Materials, Sep 4-6, 2019.

382.“Structural and compositional study of high-quality (Bi1-xSbx)2Te3 thin films grown by molecular beam epitaxy”, Chao-Kai (Kent) Cheng, J. Kwo, M. Hong, NTU, Taipei, Max Planck-Postech-Hsinchu Workshop on Complex phase Materials, Sep 4-6, 2019.

383.“Magneto-transport study of proximity-induced exchange Dirac gap in topological insulator-magnetic insulator heterostructures”, Yu-Ting (Jason) Fanchiang, J. Kwo, M. Hong, NTU, Taipei, Max Planck-Postech-Hsinchu Workshop on Complex phase Materials, Sep 4-6, 2019.

384.“Observation of room-temperature anomalous Hall effect in bulk-insulating topological insulators (Bi,Sb)2Te3 on thulium iron garnets”, Chun-Chia (Alan) Chen, M. Hong and J. Kwo, NTHU, Hsinchu, Max Planck-Postech-Hsinchu Workshop on Complex phase Materials, Sep 4-6, 2019.

385.“Electronic structure of topological insulator Bi2Se3 thin films on ferromagnetic insulator thulium iron garnet heterostructures”, Sheng-Wen (Wendy) Huang, M. Hong, J. Kwo, NTHU, Hsinchu, Max Planck-Postech-Hsinchu Workshop on Complex phase Materials, Sep 4-6, 2019.

386.“Low-Temperature Ultra-Thin Epitaxial Si Cap Enabling Highly Reliable GeSi Gate Stacks”, Hsien-Wen (Jason) Wan, J. Kwo, M. Hong, NTU, Taipei, Max Planck-Postech-Hsinchu Workshop on Complex phase Materials, Sep 4-6, 2019.

387.“Atomic and molecular oxygen bonding with epi Ge(001)-2*1 surface studied by in-situ high-resolution synchrotron radiation”, Yi-Ting Cheng, J. Kwo, M. Hong, NTU, Taipei, Max Planck-Postech-Hsinchu Workshop of Complex phase Materials, Sep 4-6, 2019.

388.“An early stage of oxidation of an epi Ge(001)-2x1 studied by in-situ high-resolution synchrotron radiation photoemission”, Yi-Ting Cheng, Hsien-Wen Wan, Chiu Ping Cheng, Jueinai Kwo, Minghwei Hong, and Tun-Wen Pi, 25th NSRRC User's Meeting & Workshops, Hsinchu, Taiwan on September 17-20, 2019.

389.“Low-Temperature Ultra-Thin Epitaxial Si Cap Enabling Highly Reliable Ge MOS”, H. W. Wan, Y. J. Hong, Y. T. Cheng, C. K. Cheng, L. B. Young, C. T. Wu, J. Kwo, and M. Hong, 50th IEEE Semiconductor Interface Specialists Conference, San Diego, California, USA, December 12-14, 2019.

390.“Comparative studies of (001), (110) and (111) epi-Ge surfaces oxidation by in-situ high-resolution synchrotron radiation photoemission”, Y. T. Cheng, H. W. Wan, C. P. Cheng, T. W. Pi, J. Kwo, and M. Hong, 50th IEEE Semiconductor Interface Specialists Conference, San Diego, California, USA, December 12-14, 2019.

391.“Thin Si-capped Ge(100), (110), and (111) Gate Stacks – Attainment of Low Interfacial Trap Density for FinFET Application and the Reliability”, H. W. Wan, Y. T. Cheng, C. K. Cheng, Y. J. Hong, T. Y. Chu, C. T. Wu, J. Kwo, and M. Hong, 50th IEEE Semiconductor Interface Specialists Conference, San Diego, California, December 12-14, 2019.

2020

392.“Bi-carrier transport in vertical p-n junctions Sb2Te3/Bi2Te3 with high-quality interfaces”, C. C. Chen, Y. T. Fanchiang, C. K. Cheng, C. T. Wu, M. Hong, and J. Kwo, 台灣物理年會 (Taiwan Physical Society annual meeting), National Pingtung University, Feb. 5-7, 2020.

393.“Top-gate electric-field effects on transport properties of (BixSb1-x)2Te3 thin films”, W. J. Zou, Y. T. Fanchiang, J. S. Wei, C. C. Chen, L. B. Young, Y. H. Lin, M. Hong, and J. Kwo, 台灣物理年會 (Taiwan Physical Society annual meeting), National Pingtung University, Feb. 5-7, 2020.

394.“Growth of α-Sn thin films on InSb(001) and (111)B by molecular beam epitaxy”, K. H. M. Chen, K. Y. Lin, C. K. Cheng, S. W. Huang, C. M. Cheng, M. Hong, and J. Kwo, 台灣物理年會 (Taiwan Physical Society annual meeting), National Pingtung University, Feb. 5-7, 2020.

395.“Crystal structure, electronic band structure and thermal stability of α-Sn on InSb(111)B”, K. Y. Lin, K. H. Chen, C. K. Cheng, S. W. Huang, C. M. Cheng, M. Hong, and J. Kwo, 台灣物理年會 (Taiwan Physical Society annual meeting), National Pingtung University, Feb. 5-7, 2020.

396.“Electronic characteristics of (001), (110) and (111) epi-Ge surfaces and their oxidation using in-situ high-resolution synchrotron radiation photoemission”, Y. T. Cheng, H. W. Wan, C.-P. Cheng, T. W. Pi, J. Kwo and M. Hong, 台灣物理年會 (Taiwan Physical Society annual meeting), National Pingtung University, Pingtung, Feb. 5-7, 2020.

397.“Structure characterization of Y-doped HfO2 epitaxial films”, C. H. Hsu, S. Yang, C. Y. Lin, L. B. Young, M. Hong and J. Kwo, 台灣物理年會 (Taiwan Physical Society annual meeting), National Pingtung University, Pingtung, Feb. 5-7, 2020.