2003
001.“GaAs-based
MOSFETs with Al2O3 Gate Dielectrics Grown by
Atomic Layer Deposition”, P. D. Ye, G. D. Wilk, B. Yang,
J. Kwo, H.-J. L. Gossmann, M.
Frei, S. N. G. Chu, S. Nakahara, J. P. Mannaerts, M. Sergent, M. Hong,
K. K. Ng, and J. Bude, DRC, June, 2003.
2004
002.“High
k
Gate Dielectrics for Si Nano Electronics”,
J. Kwo, to appear in the Vacuum Technology, Proceeding of the First
Taiwan MBE conference, Kaochiung, April 29-30, 2004.
003.“MBE Grown High
k
Gate Dielectrics of HfO2 and (Hf-Al)O2 for Si
and III-V Semiconductors Nano-electronics, W. G. Lee, Y. J. Lee, Y. D.
Wu, P. Chang, Y. L. Hsu, C. P. Chen, J. P. Mannaerts , S. Maikap, C. W.
Liu, L. S. Lee, W. Y. Hsieh, M. J. Tsai, S. Y. Lin, R. L. Lo, M. Hong,
and J. Kwo, to appear in the
Vacuum Technology, Proceeding of the First Taiwan MBE conference,
Kaochiung, April 29-30, 2004.
004.“Single Crystal
g-Al2O3 Films on Si (111), Epitaxial growth,
Structural and Electrical Properties”, S. Y. Wu, M. Hong, A.R. Kortan,
J. Kwo, and J. P. Mannaerts,
to appear in the Vacuum Technology, Proceeding of the First Taiwan MBE
conference, Kaochiung, April 29-30, 2004.
005.
“Towards GaAs MOSFET, MBE Growth, MESFET Processing, and
Characterization”, P. J. Tsai, Y. W. Chen, H.P. Yang, M. Hong,
J. Kwo, J. Chi, and J. P.
Mannaerts, to appear in the Vacuum Technology, Proceeding of the First
Taiwan MBE conference, Kaochiung, April 29-30, 2004.
006.
“Demonstration of Atomically Abrupt
Interface of HfO2 High k
Gate Dielectrics with Si for Nano
CMOS”, Wei-Jin Lee, Yi-Jun Li, Ya-Ling Hsu, Kuen-Yu Lee, Chi-Hsin Chu,
Chien-Chung Huang, Y. L. Huang, T. Gustafsson, E. Garfunkel, Sidhu
Maikap, L. S. Lee, Shi-Yen Lin, Minghwei Hong, and J. Kwo,
extended abstract in the proceeding of the Taiwan International
Conference on Nano science, June 30-July3, 2004.
007.
“Recent Advances in High
k
Gate
Dielectrics for Nano CMOS”, J. Kwo, extended abstract in the
proceeding of the Taiwan International Conference on Nano Science, June
30-July3, 2004.
008.
“Tailoring Oxide-Semiconductor
Interfaces – an Enabling Sub-nano Approach for New Science and Advanced
Devices”, M. Hong and J. Kwo, extended abstract in the proceeding
of the Taiwan International Conference on Nano science, June 30-July 3,
2004.
009.
“MBE Grown HfO2 High
k
Gate
Dielectrics for Si Nano CMOS”, Wei-Jin Lee, Yi-Jun Lee, Chi-Hsin Chu,
Kuen Yu Lee,,, Kuo-Liang Chaw, Ya-Ling Hsu, Ching Han Pan, F. R. Chen,
T. Gustafsson, E. Garfunkel, S. Maikap, L. S. Lee, M. Hong, and J.
Kwo, submitted to Conf. Proc. of IUMRS, 2004, Nov 16-18, 2004, ITRI,
Hsin Chu.
010.
“Synthesis of HfO2 High
k
Gate
Dielectrics by Sputter Deposition”, Yen-Dar Wu, Chien-Chung Huang,
Yi-Jun Lee, Ya-Ling Hsu, Chi-Hsin Chu, Kuo-Liang Jaw, Wei-Jin Lee, Ching
Han Pan, F. R. Chen, T. Gustafsson, E. Garfunkel, Sidhu Maikap, L. S.
Lee, Minghwei Hong, and J. Kwo, submitted to Conf. Proc. of
IUMRS, 2004, Nov 16-18, 2004, ITRI, Hsin Chu.
011.
“HfO2 and Sc2O3
High Dielectrics for GaAs compound semiconductor Passivation”, Hsiang-Bie
Chang, Wei-Jin Lee, Yi-Lin Huang, Chieh-Ping Chen, Yi-Jun Lee, Ya-Ling
Hsu, T. Gustafsson, E. Garfunke3, Minghwei Hong, and J. Kwo,
submitted to Conf. Proc. of IUMRS, 2004, Nov 16-18, 2004, ITRI, Hsin
Chu.
012.
“Towards GaAs MOSFET: MBE Growth,
Processing, Characterization, and Analysis”, K. Jaw, P. J. Tsai, Y. W.
Chen, H. P. Yang, P. Chang, J. P. Mannearts, J. Chi, J. Kwo, and
M. Hong, submitted to Conf. Proc. Of IUMRS, 2004, Nov 16-18, 2004, ITRI,
Hsin Chu.
013.
“Structural and Electrical Properties of Ga2O3(Gd2O3)/GaN
MOS Diodes”, M. Hong, C. P. Chen,
J. Kwo, A. R. Kortan, and J. P. Mannaert, The Annual Taiwan Physics
Society Meeting, Tsing Hua University, Hsin Chu, Taiwan, Feb. 9-11,
2004.
014.
“Epitaxial growth and structure of thin single crystal
g-Al2O3 films on Si (111) using e-beam evaporation of sapphire in
ultra-high vacuum”, M. Hong, A. R. Kortan,
J. Kwo, J. P. Mannaerts, and
S. Y. Wu, Materials Research Society (MRS) Spring Meeting, April 12-16,
2004, San Francisco, CA.
015.
“Structure of Sc2O3
films epitaxially grown on a-Al2O3
(111)”, A. Kortan, M. Hong, J.
Kwo, C. P. Chen, J. P. Mannaerts, and S. H. Liou, Materials Research
Society (MRS) Spring Meeting, April 12-16, 2004, San Francisco, CA.
016.
“Fundamental study and oxide reliability of the MBE grown Ga2-xGdxO3
dielectrics for compound semiconductor MOSFET’s”,
J. Kwo, M. Hong, J. P.
Mannaerts, Y. D. Wu, Q. Y. Lee, B. Yang, and T. Gustafsson, Materials
Research Society (MRS) Spring Meeting, April 12-16, 2004, San Francisco,
CA.
017.
“Single crystal g-Al2O3 films on Si (111) –
Epitaxial growth, structural, and electrical properties”, S. Y. Wu, M.
Hong, A. R. Kortan, J. Kwo, J. P. Mannaerts, MBE Taiwan, the 1st
Taiwan MBE Workshop, National Sun Yat-sen University, Kaohsiung, Taiwan,
April 29-30, 2004.
018.
“Towards GaAs MOSFET – MBE Growth, MESFET processing,
and characterization”, P. J. Tsai, Y. W. Chen, H. P. Yang, P. Chang, M.
Hong, J. Kwo, J. Chi, and J. P. Mannaerts, MBE Taiwan, the 1st
Taiwan MBE Workshop, National Sun Yat-sen University, Kaohsiung, Taiwan,
April 29-30, 2004.
019.
“MBE grown high-k gate dielectrics of HfO2
and (Hf,Al)O2 for Si and III-V semiconductors nano-electronics”,
W. G. Lee, Y. J. Lee, Y. D. Wu, P. Chang, Y. L. Hsu, C. P. Chen, J. P.
Mannaerts, S. Maikap, C. W. Liu, L. S. Lee, W. Y. Hsieh, M. J. Tsai, S.
Y. Lin, R. L. Lo, M. Hong, and J. Kwo, MBE Taiwan, the 1st
Taiwan MBE Workshop, National Sun Yat-sen University, Kaohsiung, Taiwan,
April 29-30, 2004.
020.
“Demonstration of atomically abrupt interface of HfO2
high-k
gate dielectrics with Si for nano CMOS”,
Wei-Jin Lee, Yi-Jun Lee, Ya-Ling Hsu, Kuen-Yu Lee, Chi-Hsin Chu, Chien-Chung
Huang, Y. L. Huang, T. Gustafsson, E. Garfunkel, Sidhu Maikap, L. S.
Lee, Shi-Yen Lin, Minghwei Hong, and
J. Raynien Kwo,
Taiwan International Conference on Nano Science and
Technology, (TICON 2004), Center for Nano-Science and Technology,
University System of Taiwan, National Tsing Hua University, Hsin Chu,
Taiwan, June 30 to July 3, 2004.
021.
“Towards
GaAs MOSFET: MBE Growth, Processing, Characterization, and Analysis”, K.
Jaw, P. J. Tsai, Y. W. Chen, H. P. Yang, P. Chang, M. Hong,
J. Kwo, J. Chi, and J. P.
Mannearts,
Taiwan International Conference on Nano Science and Technology, (TICON
2004), Center for Nano-Science and Technology, University System of
Taiwan, National Tsing Hua University, Hsin Chu, Taiwan, June 30 to July
3, 2004.
022.
“Epitaxial growth and structure of thin single
crystal Sc2O3 films on Si (111)”,
C. P. Chen, M. Hong, J. Kwo,
H. M. Cheng, Y. L. Huang, S. Y. Lin, J. Chi, H. Y. Lee, Y. F. Hsieh, and
J. P. Mannaerts, International
Conference on MBE, August 23-27, 2004 and the paper will be published in
J. Crystal Growth.
023.
“MBE Grown High k
Gate Dielectrics of HfO2 and (Hf-Al)O2 for Si and III-V Semiconductors Nano-electronics”, W. G. Lee, Y.
J. Lee, Y. D. Wu, P. Chang, Y. L. Hsu, C. P. Chen, J. P. Mannaerts , S.
Maikap, C. W. Liu, L. S. Lee, W. Y. Hsieh, M. J. Tsai, S. Y. Lin, R.L.
Lo, M. Hong, and J. Kwo, International Conference on MBE, August 23-27, 2004 and the paper will be
published in J. Crystal Growth.
024.
“Depth-profile study of the electronic structures at
Ga2O3(Gd2O3)- and Gd2O3-GaN
interfaces by x-ray photoelectron spectroscopy”, T. S. Lay, Y. Y. Liao,
W. H. Hung, M. Hong, and J. Kwo,
International
Conference on MBE, August 23-27, 2004 and the paper will be published in
J. Crystal Growth.
025.
“Depth-profiling the electronic
structures at HfO2/Si interface grown by molecular beam
epitaxy”,
T. S. Lay, S. C. Chang, C. C. Yeh, W. H. Hung,
J. Kwo and M. Hong,
NAMBE 2004 – 22nd North American MBE
conference – Banff, Alberta, Canada October 11-13, 2004.
026.
“HfO2 and Sc2O3 high k
dielectrics for GaAs compound semiconductor
passivation”, H-B.
Chang, W-J. Lee, Y-L. Huang, C-P. Chen, Y-J.
Lee, Y-L. Hsu, T. Gastafsson, E. Garfunkel, M. Hong,
and J. Kwo, IUMRS-ICA-2004 (International Conference in Asia),
Industrial Technology Research Institute,
027.
“MBE grown HfO2 high k
gate dielectrics for Si nano CMOS”, W-J.
Lee, Y-J. Lee, K-Y. Lee, C-H.
Chu, K-L. Jaw, Y-L. Hsu, C-H. Pan, F. R. Chen, T. Gastafsson, E.
Garfunkel, S. Maikap, L. S. Lee, M. Hong, and J. Kwo,
IUMRS-ICA-2004 (International Conference in Asia), Industrial Technology
Research Institute, November 16-18, 2004.
028.
“Synthesis of HfO2 high k
gate dielectrics by sputter deposition”, Y. D. Wu, C. C. Huang, Y-J.
Lee, Y-L. Hsu, C-H. Chu, K-L.
Jaw, W-J.
Lee, C-H. Pan, F. R. Chen, T. Gastafsson, E.
Garfunkel, S. Maikap, L. S. Lee, M. Hong, and J. Kwo,
IUMRS-ICA-2004 (International Conference in Asia), Industrial Technology
Research Institute, November 16-18, 2004.
029.
“GaAs-based MOSFET: growth, device processing,
characterization, and analysis”, Y. W. Chen, K. Jaw, P. J. Tsai, H. P.
Yang, H-B. Chang, J. Kwo, J. Chi, J. P. Mannaerts, and M. Hong,
IUMRS-ICA-2004 (International Conference in Asia), Industrial Technology
Research Institute,
030.
“Interfacial roughness between oxide and GaAs studied
by x-ray reflectivity”, Y. L. Huang, H-B. Chang, C. P. Chen, H. Y. Lee,
H. J. Liu, J. Kwo, and M. Hong, IUMRS-ICA-2004 (International
Conference in Asia), Industrial Technology Research Institute, November
16-18, 2004.
031.
“Thin single crystal g-Al2O3 films on Si (111) –
epitaxial growth, structures, and electrical characteristics”, S. Y. Wu,
W-J. Lee, Y. L. Huang, Y-J. Lee, Y-L. Hsu, Y. F. Hsieh, S. Gwo, J.
Kwo, A. R. Kortan, J. P. Mannaerts, and M. Hong, IUMRS-ICA-2004
(International Conference in Asia), Industrial Technology Research
Institute, November 16-18, 2004.
032.
“MBE grown HfO2 gate dielectrics for Si
Nano CMOS and III-V semiconductor MOSFETs”, J. Kwo, M. Hong, J.
P. Mannaerts, W. J. Lee, H. P. Chang, Y. J. Lee, C. H. Chu, K. L. Jaw,
Y. L. Hsu, K. Y. Lee, C. H. Pan, C. C. Huang, Y. L. Huang, T. Gustafsson,
and E. Garfunkel,
Materials Research Society (MRS) Fall Meeting, November 29 – December 3,
2004, Boston, MA.
033.
“MBE Growth and Characterization of High-Quality Single Crystal Sc2O3
Films on Si (111)”, M. Hong, H. Y. Lee, A. R. Kortan,
J. Kwo, C. P. Chen, Y. F.
Hsieh, H.-M. Cheng, Y. L. Hwang, and J. P. Mannaerts, Materials Research
Society (MRS) Fall Meeting, November 29 – December 3, 2004, Boston, MA. 2005
034.
“Epitaxial growth of half metal thin films on GaAs(100) for spin
injection”,
Y. L. Hsu, P. Chang, Y. H. Chiu, Y. L.
Huang, M. L. Huang, W. G. Lee, Y. P. Lin, M. Hong,
and J. Kwo,
The
Annual Taiwan Physics Society Meeting, National Sun Yat-Sen University,
Kaohsiung, Taiwan, Feb. 1-3, 2005.
035.
“The
thermal stability of High k
Dielectrics TiN/HfO2/Si Gate Stack for Nano CMOS”,
C. S. Chu, W. J. Lee, K. L. Jaw, K. Y. Lee, C. H. Pan, M. Hong, and
J. Kwo,
The Annual Taiwan Physics Society Meeting, National Sun Yat-Sen
University, Kaohsiung, Taiwan, Feb. 1-3, 2005.
036.
“Structural and Electrical Characteristics of High k
Gate Dielectrics HfO2 thin films”, Y. J. Lee, W. J. Lee, Y.
L. Huang, K. Y. Lee, C. H. Pan, Y. L. Hsu, R.L. Lo, T. Gustafsson, E.
Garfunkel, M. Hong, and J. Kwo,
The Annual Taiwan Physics Society Meeting, National Sun Yat-Sen
University, Kaohsiung, Taiwan, Feb. 1-3, 2005.
037.
“Depletion mode n-channel InGaAs/GaAs MOSFET, device processing and
characterization”,
K. Jaw, P. J. Tsai, Y. W. Chen, H. P. Yang, P.
Chang, J. Kwo, J. Chi, and M.
Hong,
The Annual Taiwan Physics Society Meeting, National Sun Yat-Sen
University, Kaohsiung, Taiwan, Feb. 1-3, 2005.
038.
“Sc2O3/Si(111) interfacial chemistry studied by
synchrotron radiation based x-ray photoelectron spectroscopy”, M.-L.
Huang (黃懋霖), C.-H. Chen (陳家浩), S.-C. Wang (王世杰), P. Chang (張翔筆), C. P. Chen(陳治平), C. H. Wu(吳佳慧), Y. S. Chang(張宇行), J. Kwo (郭端年), and M. Hong (洪銘輝), The Annual Taiwan Physics Society Meeting, National Sun Yat-Sen
University, Kaohsiung, Taiwan, Feb. 1-3, 2005.
獲得"年會壁報論文獎",此獎項為全部五百多篇posters不分sessions選出十多篇獲獎之一
039.
“Epitaxial growth of half metal thin films on GaAs(100)
for spin injection”,
Y. L. Hsu,
P. Chang, Y. H. Chiu, Y. L. Huang, M. L. Huang, Y. J. Lee, K. Y.
Lee, W. G. Lee, Y. Lin, M. Hong,
and J. Kwo, The American
Physical Society
March Meeting, Los Angeles, CA, March 21-26, 2005.
040.
“Thin single crystal Sc2O3
Films on Si (111) with very sharp interface”, M. Hong, H. Y. Lee, A. R.
Kortan, J. Kwo, P. Chang, Y. L. Huang, C. P. Chen, The American
Physical Society March Meeting, Los Angeles, CA, March 21-26, 2005.
041.
“Depletion mode n-channel InGaAs/GaAs MOSFET using Ga2O3(Gd2O3)
as a gate dielectric”, K. Jaw, Y. Chen, P. Tsai, H. P. Yang, P. Chang,
J. Kwo, J. Chi, and M. Hong, Material Research Society Spring
Meeting, San Francisco, CA, March 28 – April 1, 2005.
042.
“HfO2 high k
dielectrics for GaAs compound semiconductor
passivation”, P. Chang, W. C. Lee, Y. L. Huang, Y. J. Lee, Z. K. Yang,
M. Hong, and J. Kwo, Material Research Society Spring Meeting,
San Francisco, CA, March 28 – April 1, 2005.
043.
“Temperature annealed Ga2O3(Gd2O3)/GaAs
heterostructures”, Y. L. Huang, P. Chang, Z. K. Yang, Y. J. Lee, H. Y.
Lee, H. J. Liu, J. Kwo, J. P. Mannaerts, and M. Hong, Material
Research Society Spring Meeting, San Francisco, CA, March 28 – April 1,
2005.
044.
“Interfacial study of high k
dielectrics TiN/HfO2/Si gate stack for
nano CMOS”, W. C. Lee, C. H. Chu, Y. J. Lee, K. Jaw, K. Y. Lee, C. H.
Pan, Y. L. Hsu, P. Chang, Y. L. Huang, T. Gustafsson, E. Garfunkel, M.
Hong, and J. Kwo, Material Research Society Spring Meeting, San
Francisco, CA, March 28 – April 1, 2005.
045.
“Depletion-mode InGaAs/GaAs MOSFET with oxide passivated by amorphous
Si”, P. J. Tsai, U. N. Chiu, L. K. Chu, Y. W. Chen, H. P. Yang, P.
Chang, J. Kwo, J. Chi, and M. Hong, MBE Taiwan 2005, May 19-20,
Hsinchu, Taiwan.
046.
“Growth rate effects on InGaAs/GaAs quantum dots”, C. Y. Huang, T. M. Ou,
W. T. Chang, M. C. Wu, J. J. Shen, C. Y. Liang, S. Y. Lin, P. Chang, T.
D. Lin, M. Hong, J. Kwo, and J. Chi, MBE Taiwan 2005, May 19-20,
Hsinchu, Taiwan.
047.
“Interface study of MBE-grown novel oxide/semiconductor heterostructures”,
Y. J. Lee, W. C. Lee, P. Chang, Y. L. Huang, J. P. Mannaerts, M. Hong,
and J. Kwo, MBE Taiwan 2005, May 19-20, Hsinchu, Taiwan. (This
paper was selected as the 2nd price among the student papers
(42 totals) presented at the conference.)
048.
“Epitaxial magnetic films of Fe3Si/GaAs heterostructures for
spintronics”, Y. L. Hsu, P. Chang, Y. H. Chiu, J. P. Mannaerts, Y. L.
Huang, Z. K. Yang, Y. J. Lee, M. L. Huang, W. G. Lee, F. C. Hsu, R. L.
Lo, C. D. Chen, Y. Lin, M. Hong, and J. Kwo, MBE Taiwan 2005, May
19-20, Hsinchu, Taiwan.
049.
“Ga2O3(Gd2O3)/Si (100)
heterostructures grown by molecular beam epitaxy”, T. D. Lin, P. Chang,
T. H. Chiang, C. W. Nieh, J. Kwo, and M. Hong, MBE Taiwan 2005,
May 19-20, Hsinchu, Taiwan.
050.
“Thermodynamic stability of Ga2O3(Gd2O3)/GaAs
heterostructures”, Z. K. Yang, Y. L. Huang, P. Chang, Y. J. Lee, H. Y.
Lee, H. J. Liu, J. Kwo, T. S. Lay, and M. Hong, MBE Taiwan 2005,
May 19-20, Hsinchu, Taiwan.
051.
“The electrical characteristics of high k MOSFET with MBE-grown HfO2 gate oxide and
TiN metal gate”, C. S. Chiu, K. L. Jaw, W. G. Lee, Y. L. Huang, C. H.
Pan, M. Hong, and J. Kwo, MBE Taiwan 2005, May 19-20, Hsinchu,
Taiwan.
052.
“Studies of MBE grown hetero-structures using x-ray reflectivity”, Z. K.
Yang, Y. H. Chang, M. H. Fu, Y. L. Huang, P. Chang, H. Y. Lee, H. J.
Liu, J. Kwo, and M. Hong, MBE Taiwan 2005, May 19-20, Hsinchu,
Taiwan.
053.
“Depletion-mode GaAs-based MOSFET with Ga2O3(Gd2O3)
as a gate dielectric”, L. K. Chu, P. J. Tsai, U. N.Chiu, Y. W.
Chen, H. P. Yang, P. Chang, J.
Kwo, J. Chi, and M. Hong,
2005奈米國家型科技計畫成果發表會, 9/21-23, 2005,
國際會議中心, Taipei, Taiwan.
054.
“Surface
passivation of III-V compound semiconductors using
atomic-layer-deposition grown Al2O3”,
M. L. Huang, Y. C. Chang, C. H. Chang, Y. J. Lee, P. Chang,
J. Kwo, T. B. Wu and M. Hong,
2005奈米國家型科技計畫成果發表會, 9/21-23, 2005,
國際會議中心, Taipei, Taiwan.
055.
“MBE
grown high k
Ga2O3(Gd2O3)
gate dielectrics for Si nano-electronic”,
T. D. Lin, P. Chang, W. J. Lee, Z. K. Yang, H. T. Lee, J. Kwo, and M.
Hong,
2005奈米國家型科技計畫成果發表會, 9/21-23, 2005,
國際會議中心, Taipei, Taiwan.
056.
“High-Quality Nano-Thickness Single Crystal Sc2O3
film Grown on Si (111)”, C.
P. Chen, A. R. Kortan, P. Chang, Y. L. Huang, H. Y. Lee,
J. Kwo,
M. W. Chu, C. H. Chen,
L. Goncharova, E. Garfunkel, and T. Gustafsson, and M. Hong,
2005奈米國家型科技計畫成果發表會, 9/21-23, 2005,
國際會議中心, Taipei, Taiwan.
057.
“Gamma
phase nano single crystal Al2O3 on Si(111)”,
S. Y. Wu,
W. C. Lee , Y. L. Huang, J. P. Mannaerts, A. R.
Kortan, J. Kwo,
C. H. Hsu, and M. Hong,
2005奈米國家型科技計畫成果發表會, 9/21-23, 2005,
國際會議中心, Taipei, Taiwan.
058.
“Thermodynamic
stability of Ga2O3 (Gd2O3)/GaAs
interface”,
Z. K. Yang,
Y. L. Huang, P. Chang, Y.
J. Lee,
H. Y. Lee,
H. J. Liu, J. Kwo,
J. P. Mannaerts, and M. Hong,
2005奈米國家型科技計畫成果發表會, 9/21-23, 2005,
國際會議中心, Taipei, Taiwan.
059.
“The
electrical characteristics of high-К MOSFET with MBE-grown HfO2
gate oxide and TiN metal gate”,
C. H. Pan, C. S. Chu, K. L. Jaw, W C. Lee, Y. J. Lee ,Z. K. Yang, Y.
L. Huang, M. Hong, and J. Kwo,
2005奈米國家型科技計畫成果發表會, 9/21-23, 2005,
國際會議中心, Taipei, Taiwan.
060.
“High k
dielectric HfO2
films and interfaces deposited by molecular beam epitaxy and
sputtering”, W. C. Lee,
Y. D.
Wu,
Y. J. Lee,
Kuen-Yu Lee, J. P. Mannaerts, F. R.
Chen, Lyudmila Goncharova, T.
Gustafsson, E.Garfunkel,
M. Hong,
and
J. Kwo,
2005奈米國家型科技計畫成果發表會, 9/21-23, 2005,
國際會議中心, Taipei, Taiwan.
061.
“Hafnium
Oxide for Advanced Gate Dielectrics on Compound Semiconductor Grown by
MBE”, P. Chang, Z. K. Yang, Y. J. Lee, W. G. Lee, C. M. Huang,
C. H. Hsu, M. Hong, and J. Kwo,
2005奈米國家型科技計畫成果發表會, 9/21-23, 2005,
國際會議中心, Taipei, Taiwan.
062.
“High-quality thin single crystal Sc2O3 films
grown on Si (111)”, C. P.
Chen, M. Hong, A. R. Kortan, P. Chang, Y. L. Huang, H. Y. Lee,
J. Kwo, M. W. Chu,
C. H. Chen, L. Goncharova, E. Garfunkel, and T. Gustafsson,
annual users meeting, the National Synchrotron Radiation Research
Center, Hsin Chu, October 25, 26, 2005.
(佳作 out of 180 posters)
063.
“Structural Study of MBE-Grown Nano-Thick HfO2/GaAs
Heterostructures”, Z. K.Yang, P. Chang, C. M. Huang, C.-H. Hsu,
J. Kwo, and M. Hong, annual
users meeting, the National Synchrotron Radiation Research Center, Hsin
Chu, October 25, 26, 2005. (2nd
place in the competition,
out of 180 posters)
064.
“Structural Characteristics of MBE-Grown Y2O3 Film
on Si (111)”,
C.-W. Nieh, W.-G. Lee, Z.-K. Yang, Y.-J. Lee, P.
Chang, T.-D. Lin, J. Kwo, C.
H. Hsu, and M. Hong,
annual users
meeting, the National Synchrotron Radiation Research Center, Hsin Chu,
October 25, 26, 2005. (佳作out of 180 posters)
065.
“Structural Characteristics of Fe3Si
Epitaxial Magnetic Films on GaAs (001)”,
Y. L. Hsu, Z. K. Yang, M. C. Hang, C.
H. Hsu, M. Hong, and
J. Kwo,
annual users meeting, the National Synchrotron Radiation Research
Center, Hsin Chu, October 25, 26, 2005. (佳作out of 180 posters)
066.
“Gamma
phase nano thick single crystal Al2O3 on Si
(111)”,
S.-Y. Wu, C.-H. Hsu, A. R.
Kortan,
J. Kwo, W. C. Lee, J. P. Mannaerts, Y. L. Huang, and M.
Hong,
annual users meeting, the National Synchrotron Radiation Research
Center, Hsin Chu, October 25, 26, 2005. (佳作out of 180 posters)
067.
“Incorporation of Co into the HfO2 layer grown on Si(100) by
electron beam co-deposition”, S. J. Chang, W. C. Lee, J. Hwang, M. Hong,
and J. Kwo, 2005 Annual conference for surface coating and technology,
Taiwan.
12月的台灣鍍膜協會辦的研討會. 2006
068.
“Structural and Magnetic
Characteristics of Fe3Si Epitaxial Films on GaAs (001)”, Y.
L. Hsu, W. Chang, C. H. Hsu, H. H. Hung, M. Hong
and J. Kwo, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Taiwan University, Jan. 16-18, 2006. (the
best poster paper in the field of magnetism)
069.
“Electrical and Structural Characteristics of High-k
Dielectrics on Si(100), and MBE-grown Template by Sputtering.”, Y.
D. Wu, W. C. Lee, Y. J. Lee, M. C. Hang, M. Hong, and
J. Kwo, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Taiwan University, Jan. 16-18, 2006.
070.
“Structural Characteristics of MBE-Grown Y2O3 Film
on Si (111)”, C.-W. Nieh, W.-C. Lee, Z.-K. Yang, Y.-J. Lee, P. Chang,
T.-D. Lin, J. Kwo, C. H. Hsu
and M. Hong, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Taiwan University, Jan. 16-18, 2006.
071.
“Surface passivation of III-V compound semiconductors using
atomic-layer- deposition grown Al2O
072.
“Magnetic Properties of Co-doped HfO
073.
“Structure of epitaxial Ga2O3(Gd2O3)
films grown on Si(111)”, T. D. Lin, M. C. Hang, P. Chang, W. C. Lee, Z.
K. Yang, C. H. Hsu, J. Kwo,
and M. Hong, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Taiwan University, Jan. 16-18, 2006.
074.
“Electrical characteristics of High-k
MOSCAP and MOSFET devices with MBE-grown HfO2 gate oxide
and TiN metal gate”, C. H. Pan, W. C. Lee, K. L. Jaw, C. P. Chen, K. Y.
Lee, Y. J. Lee, Z. K. Yang, Y. N. Chiou, M.C. Wu, M. Hong, and J. Kwo, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Taiwan University, Jan. 16-18, 2006.
075.
“Structural Study of MBE-Grown HfO2 on GaAs Heterostructures.”,
Z. K. Yang, P. Chang, W. C. Lee, C. M. Huang, C.-H. Hsu, M. Hong, and
J. Kwo, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Taiwan University, Jan. 16-18, 2006. (the best
poster paper in the field of Semiconductors).
076.
“A Novel
Template Approach by MBE for ALD Growth of High k
Dielectrics”, K. Y. Lee, W. C. Lee, M. L. Huang, Y. C. Lee, C. H.
Chang, Y. K. Chiou, M. Hong, and
J. Kwo, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Taiwan University, Jan. 16-18, 2006.
077.
“Magnetic Properties of Co-doped HfO
078.
“Surface passivation
of III-V compound semiconductors using atomic-layer-deposition grown Al2O
079.
“High-quality Thin Single-Crystal Y2O3 films Grown
on Si (111)”,
C.-W. Nieh, W.-C. Lee, Z.-K. Yang,
Y.-J. Lee, P. Chang, T.-D. Lin, M. Hong,
J. Kwo, and C. H. Hsu,
APS
March Meeting 2006,
080.
“Cubic HfO2 Doped with Y2O3 for
Advanced Gate Dielectrics by MBE”,
Z. K. Yang,
W. C. Lee, P. Chang, M. L. Huang,
Y. L. Huang,
M. Hong,
C. M. Huang,
C. H. Hsu, and J. Kwo,
APS
March Meeting 2006, March 13-17, 2006.
081.
“A Novel
Template Approach by MBE for ALD Growth of High k
Dielectrics”, K. Y. Lee, W. C. Lee, M. L. Huang, Y. C. Lee, C. H.
Chang, Y. K. Chiou, M. Hong, and
J. Kwo, APS
March Meeting 2006, March 13-17, 2006.
082.
“Local environment surrounding Co in MBE-grown HfO2: Co thin films probed by EXAFS and
XMCD”, Y. L. Soo, M. Hong, J. Kwo
et al,
APS
March Meeting 2006, March 13-17, 2006.
083.
“Local valence structure of Fe in Fe3Si/GaAs (100)”,
K. L. Yu, M. Hong, J. Kwo et
al,
APS
March Meeting 2006, March 13-17, 2006.
084.
“Measuring and
Modeling the Scaling Trend of the RF Noise in MOSFETs”,
H. L. Kao, Albert Chin, C. C.
Liao, Sean P. McAlister, J. Kwo,
and M. Hong, Device Research Conference,
Pennsylvania State University,
Pennsylvania, USA, June 26-28, 2006..
085.
“Very
Low Voltage SiO2/HfON/HfAlO/TaN Memory with Fast Speed and
Good Retention”,
C. H. Lai,
A. Chin, H. L. Kao, K. M. Chen, M. Hong,
J. Kwo and C. C. Chi,
Symposia on VLSI Technology and Circuits, Hilton Hawaiian Village,
Honolulu, Hawaii, USA, June 13-17, 2006.
086.
“High
Performance Micro-Crystallized TaN/SrTiO3/TaN Capacitors for
Analog and RF Applications”, K. C. Chiang, C. C. Huang, A. Chin, W. J.
Chen, H. L. Kao, M. Hong, and J.
Kwo, Symposia on VLSI Technology and Circuits, Hilton Hawaiian
Village, Honolulu, Hawaii, USA, June 13-17, 2006.
087.
“Structural Investigation of Epitaxial HfO2 Films by X-ray
Scattering”, C. H. Hsu, Z. K. Yang, P. Chang,
J. Kwo,
M. Hong,
Chih-Mao Huang, and Hsin-Yi Lee, 5th International Conference
on Synchrotron Radiation in Materials Science, Chicago, July 30 – August
2, 2006.
088.
“A Novel Template Approach by MBE for ALD Growth of High k Dielectrics”, K.
Y. Lee(李昆育), W. C. Lee, C. H. Chung, Y. K. Chiou, M.L. Hung, Y. J. Lee and M. Hong,
and J. Kwo,
MBE Taiwan 2006 & High-K Materials Workshop, June 1-3,2006. selected
as the second best student
poster award
089.
“Structural and Magnetic Characteristics of Epitaxial Fe3Si/GaAs
Heterostructures”, Y. L. Hsu(徐雅玲), M. L. Huang, W. Chang, C. H. Hsu, M. Hong and
J. Kwo,
MBE Taiwan 2006 & High-K Materials Workshop, June 1-3,2006,
the best student poster award.
090.
“Analysis of Yttrium-doped and Pure Hafnium Oxide High κ Dielectric Thin
Films on GaAs”, W. C. Lee (李威縉), Y. J. Lee(李毅君), Z. K. Yang(楊智凱), P. Chang(張翔筆), M.L. Huang(黃懋霖), S. C. Liou(劉思謙), C. H. Hsu(徐嘉鴻), M. Hong(洪銘輝), and J. Kwo (郭瑞年),
MBE Taiwan 2006 & High-K Materials Workshop, June 1-3,2006.
091.
“Grown Ga2O3(Gd2O3) thin film
of cubic phase on Si(111) by molecular beam epitaxy”, M. C. Hang, T. D.
Lin, Z. K. Yang, H. Niu, C. H. Hsu,
J. Kwo, and M. Hong,
MBE Taiwan 2006 & High-K Materials Workshop, June 1-3, 2006.
092.
“Structure Characteristics and Strain Relaxation Behavior of Ultrathin Y2O3
Films Epitaxially Grown on Si(111)”, C. W. Nieh, W. C. Lee, Y. J. Lee,
Z. K. Yang, J. Kwo, C. H. Hsu
and M. Hong,
MBE Taiwan 2006 & High-k Materials Workshop, June 1-3,2006.
093.
“Inelastic Electron Tunneling Spectroscopy Study on MBE-grown HfO2
Metal-Oxide-Semiconductor System”, C.C. Huang (黃建中), H. C. Ho, Y. D. Wu, W. C. Lee, M. Hong, and
J. Kwo,
MBE Taiwan 2006 & High-K Materials Workshop, June 1-3,2006.
094.
“The Improvement of Interfacial and Electrical Properties for Sputtered
Ti-doped HfO2 by Using a MBE-Grown Template”, Y. D. Wu(吳彥達), Y. J. Lee, W. C. Lee, M. L. Huang, H. C. Chiu,
M. Hong, J. Kwo,
MBE Taiwan 2006 & High-K Materials Workshop, June 1-3,2006.
095.
“Electrical characteristics of High-k
MOSCAP and MOSFET devices with MBE-grown HfO2
gate oxide and TiN metal gate” C. H. Pan, W. C. Lee, C. S. Chiou, C. P.
Chen, K. Y. Lee, Y. J. Lee, Z. K. Yang, Y. N. Chiou, M. Hong, and
J. Kwo,
MBE Taiwan 2006 & High-K Materials Workshop, June 1-3,2006.
096.
“Characteristics of initial growth of Ga2O3(Gd2O3)
on GaAs”, M. L. Huang, T. D. Lin, W. C. Lee, T. H. Chiang,
J. Kwo, and M. Hong,
MBE Taiwan 2006 & High-K Materials Workshop, June 1-3,2006.
097.
“Interfacial characteristics of high-quality single-crystal Sc2O3
grown on Si(111)”, H. Y. Chou, P. Chang, Z. K. Yang, M. L. Huang,
J. Kwo, and M. Hong,
MBE Taiwan 2006 & High-K Materials Workshop, June 1-3,2006.
098.
“Electric spin injection in GaAs/AlGaAs Quantum well LEDs”, Y. N. Chiu,
C. C. Ho, P. Chang, H. P. Yang, M. Hong, and
J. Kwo,
MBE Taiwan 2006 & High-K Materials Workshop, June 1-3,2006.
099.
“Magnetic Properties of MBE Grown Cobalt Doped HfO
100.
“Determination of Spin Polarization of
Ferromagnetic Fe3Si Epitaxial Films by Point-Contact Andreev
Reflection”, Y. H. Chiu, T. W. Chiang, S. Y. Huang, Y. L. Hsu, S. F.
Lee, and J. Kwo, Taiwan Annual Magnetism and Magnetic Technology Conference,
National Taiwan Univ., Taipei, June 28-30, 2006,
selected as the best Student Poster Award.
101.
“Structural properties of yttrium-doped and pure hafnium oxide high
k
dielectric thin films on GaAs”, Y. J. Lee, Z. K. Yang, W. C. Lee, P.
Chang, S. C. Liou, M. W. Chu, C. H. Chen, M. Hong, and
J. Kwo, 14th International Conference on Molecular Beam
Epitaxy (MBE2006), September 3-8, 2006.
102.
“Structural, Magnetic properties, and Spin LED of Epitaxial Fe3Si/GaAs
Heterostructures”, Y. L. Hsu, M. L. Huang, Y. N. Chiu, C. C. Ho, P.
Chang, C. H. Hsu, M. Hong and J.
Kwo, 14th International Conference on Molecular Beam
Epitaxy (MBE2006), September 3-8, 2006.
103.
“MBE Grown High-Quality Gd2O3/ Si (111)
Heterostructure”, T. D. Lin, M. C. Hang, P. Chang, W. C. Lee, Z. K.
Yang, H. Niu, C. H. Hsu, J. Kwo,
and M. Hong, 14th International Conference on Molecular Beam
Epitaxy (MBE2006), September 3-8, 2006.
104.
“Probing the initial growth of Ga2O3(Gd2O3)
on GaAs using in situ X-ray photoelectron spectroscopy”, M. L. Huang, T.
D. Lin, W. C. Lee, J. Kwo,
and M. Hong, 14th International Conference on Molecular Beam
Epitaxy (MBE2006), September 3-8, 2006.
105.
“Cubic phase HfO2 Epitaxially grown by MBE”, Z. K. Yang, W.
C. Lee, P. Chang, M.L. Huang, Y. L. Huang, C. M. Huang, C. H. Hsu, M.
Hong, and J. Kwo, 14th
International Conference on Molecular Beam Epitaxy (MBE2006), September
3-8, 2006.
106.
“Depletion mode GaAs-based MOSFET with Ga2O3(Gd2O3)
as a gate dielectric”, P. J. Tsai, L. K. Chu, Y. W. Chen, U. N. Chiu, H.
P. Yang, P. Chang, J. Kwo, J.
Chi, and M. Hong, 14th International Conference on Molecular
Beam Epitaxy (MBE2006), September 3-8, 2006.
107.
“MBE grown high κ dielectrics of Ga2O3(Gd2O3)
for GaN”, Y. C. Chang, Y. N. Chiu, S. Y. Wu, H. C. Chiu, P. Chang, Y. J.
Lee, J. Kwo, Y. H. Wang, and
M. Hong, 14th International Conference on Molecular Beam
Epitaxy (MBE2006), September 3-8, 2006.
108.
“Cubic Phase HfO2 Epitaxial Thin films
Grown by MBE”, Z. K. Yang(楊智凱), W. C. Lee(李威縉), Y. J. Lee(李毅君), Y. H. Chang(張宇行), C.H. Lee(李奇勳), K. L. Yu(于冠禮), C. -H. Hsu(徐嘉鴻), M.T. Tang(湯茂竹), M. Hong(洪銘輝), and J.
Kwo(郭瑞年), NSRRC Annual User Meeting, Sep 27-28, 2006,
NSRRC, Hsin Chu, Taiwan.
中心用戶年會報告摘要,
selected as the Third best
poster award. 2007
109.
“MBE and ALD grown High κ Gate Dielectrics
on GaN”,
H.C. Chiu (邱漢欽), Y. C. Chang (張耀中), K. Y. Lee (李昆育), W. C. Lee (李威縉), T. D. Lin (林宗達), Y. J. Lee (李毅君) , M. L. Huang (黃懋霖), M. Hong (洪銘輝), J. Kwo (郭瑞年) and Y. H. Wang (王永和), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Central University, Jan. 23-25, 2007.
110.
“High-κ dielectrics on germanium MOS - XPS and
electrical studies”, C. H. Lee(李奇勳), M. L. Huang(黃懋霖), K. Y. Lee(李昆育), W. C. Lee(李威縉), T. D. Lin(林宗達), Y. J. Lee(李毅君), M. Hong(洪銘輝), and J.
Kwo(郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Central University, Jan. 23-25, 2007.
111.
“Determination
of Spin Polarization of Ferromagnetic Fe3Si epitaxial Films
by Point-Contact Andreev Reflection”, Y. H. Chiu(邱亦欣), T. W. Chiang(江典蔚), S. Y. Huang(黃斯衍), Y. L. Hsu(徐雅玲), S. F. Lee(李尚凡), M. Hong(洪銘輝) and J. Kwo(郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Central University, Jan. 23-25, 2007.
112.
“MOS Ge Diodes Based on High k
Gate Dielectrics Grown by MBE and ALD”,K. Y. Lee(李昆育), W. C. Lee, T. D. Lin, C. H. Lee, Y. C. Chang, Y. J. Lee, M. L. Huang, Y.
D. Wu, M. Hong, J. Kwo, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Central University, Jan. 23-25, 2007.
113.
“The
mechanism of Fermi level pinning/unpinning at high κ Oxide/GaAs
interface”, M. L. Huang (黃懋霖), W. C. Lee (李威縉) , P. Chang (張翔筆) , T. D. Lin (林宗達), Y. J. Lee (李毅君), and M. Hong (洪銘輝), J. Kwo
(郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Central University, Jan. 23-25, 2007.
114.
“Investigation of a new diluted magnetic oxide with
room temperature ferromagnetism-
Co doped HfO
115.
“Structural and compositional study of cubic HfO2
doped with Y2O
116.
“Inelastic Electron Tunneling Spectroscopy study on
HfO2 MOS structure”, S. L. You(游璇龍), C. C. Huang(黃建中), W. C. Lee(李威縉), M. L. Huang (黃懋霖), H. C. Ho(何信佳), M. Hong(洪銘輝), and J.
Kwo(郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Central University, Jan. 23-25, 2007.
117.
“MOS Ge Diodes Based on High k
Gate Dielectrics Grown by MBE and ALD”, K. Y. Lee, W. C. Lee, T. D. Lin,
C. S. Lee, Y. C. Chang, Y. J. Lee, M. L. Huang, Y. D. Wu, M. Hong,
J. Kwo,
118.
“Inelastic Electron Tunneling Spectroscopy of Silicon Based MOS Diode
with High Permittivity Gate Dielectrics”, S. L. You, C. C. Huang, W. C.
Lee, M. L. Huang, H. C. Ho, M. Hong, and
J. Kwo,
119.
“MBE and ALD grown High κ Dielectrics Gate Stacks on GaN”, Y. C. Chang,
K. Y. Lee, W. C. Lee, T. D. Lin, Y. J. Lee, M. L. Huang, M. Hong,
J. Kwo and Y. H. Wang,
120.
“Investigations
of a New Diluted Magnetic Oxide with Room Temperature Ferromagnetism in
Co-doped HfO
121.
“The mechanism of Fermi level pinning/unpinning at high k
Oxide/GaAs
interface”, M. L. Huang, W. C. Lee, P. Chang, T. D. Lin, Y. J. Lee, and
M. Hong, J. Kwo,
122.
“Enhancement-Mode (with Channel Inversion) and Depletion-Mode MOSFETs
with Ga2O3(Gd2O3)/Si3N4
Dual-Layer Gate Dielectrics on In0.2Ga0.8As”, Jun-Fei
Zheng, Wilman Tsai, Tsung-Da Lin, Chih-Ping Chen, Minghwei Hong, J.
Raynien Kwo, Sharon Cui and
Tso-Ping Ma,
123.
“Growth and material characteristics of Ga2O3(Gd2O3)Si3N4
dual-layer gate dielectric for inversion-channel and depletion mode GaAs-based
MOSFET”, T. D. Lin, C. P. Chen, M. L. Huang, Y. J. Lee, C. H. Lee, M. C.
Pan, M. Hong, J. Kwo, J. F. Zheng, W. Tsai, S. Cui, and T. P. Ma,
124.
"High κ dielectrics fabricated using a novel MBE template approach for
subsequent ALD growth: MOSFET’s and MOS Diode’s characteristics", C. H.
Pan, K. Y. Lee, W.C. Lee, L. K. Chu, M. L. Huang, C.H. Chu, Y.J. Lee, M.
Hong, and J.
Kwo, 25th North American
Molecular Beam Epitaxy Conference, Albuquerque, New Mexico, USA,
September 23-26, 2007.
125.
"Growth and structural characteristics of GaN/nano thick
g-Al2O3/Si
(111)", W. C. Lee, H. M. Ng, Y. J. Lee, L. T. Tung, S. Y. Wu, C. H. Lee,
J. Kwo, C. H. Hsu, and M.
Hong, 25th North American Molecular Beam Epitaxy
Conference, Albuquerque, New Mexico, USA , September 23-26, 2007.
126.
"Nano thick Y2O3 films grown on Si (111) with a
structural perfection", W. C. Lee, C. W. Nieh, Y. J. Lee, Z. K. Yang,
C.-H. Hsu, A. R. Kortan, J. Kwo,
and M. Hong, 25th North American Molecular Beam Epitaxy
Conference, Albuquerque, New Mexico, USA, September 23-26, 2007.
127.
"Oxide scalability in Ga2O3(Gd2O3)/In0.20Ga0.80As/GaAs
hetero-structures", K. H. Shiu, C. H. Chiang, Y. D. Wu, W. C Lee, Y. J.
Lee, P. Chang, L. T. Tung, J. Kwo,
and M. Hong, 25th North American Molecular Beam Epitaxy
Conference, Albuquerque, New Mexico, USA, September 23-26, 2007.
128.
"MBE grown Ga2O3(Gd2O3)
high-k
dielectrics for
Germanium passivation", C. H. Lee, T. D. Lin, L. T. Tung, K. Y Lee,
J.
Kwo, and M. Hong, 25th North
American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico,
USA, September 23-26, 2007.
129.
"Structural Investigation of MBE Grown Yttrium-Doped HfO2
Heterostructures", C. H. Lee, Z. K. Yang, W. C. Lee, Y. J. Lee, B.H.
Lin, C. H. Hsu, J. Kwo and M.
Hong, NSRRC 13th Users' Meeting October 31-November 7, 2007, Hsinchu,
Taiwan.
130.
"Growth and structural characteristics of GaN/nano thick
g-Al2O3/Si(111)",
W. C. Lee, H. M. Ng, Y. J. Lee, L. T. Tsung, S.Y. Wu, C. H. Lee,
J. Kwo, C. H. Hsu, and M.
Hong, NSRRC 13th Users' Meeting, 10/31-11/7, 2007, Hsinchu, Taiwan.
131.
"Structural Characteristics and Strain Relaxation Behavior of Nano-thick
Y2O3 Films Epitaxially Grown on Si(111)", Y. J
Lee, W. C. Lee, C. W. Nieh, Z. K. Yang,
J. Kwo, C. H. Hsu, and M.
Hong, NSRRC 13th Users' Meeting, 2007, 10/31-11/7, Hsinchu, Taiwan.
132.
"Self-aligned Inversion N-channel Ga2O3(Gd2O3)/GaAs
MOSFET with TiN Gate and Ga2O3(Gd2O3)
Dielectric", C. P. Chen, T. D. Lin, Y. C. Chang, M. Hong, and
J. Kwo, International
Semiconductor Device Research Symposium (ISDRS), College Park, MD, USA,
December 12-14, 2007.
133.
"InGaAs n-MOS devices integrated using ALD-HfO2/metal gate
without surface cleaning and interfacial layer passivation", Y. C.
Chang, M. L. Huang, Y. J. Lee, K. Y. Lee, T. D. Lin, M. Hong,
J. Kwo, C. C. Liao, K. Y.
Cheng, and T. S. Lay, International Semiconductor Device Research
Symposium (ISDRS), College Park, MD, USA, December 12-14, 2007. 2008
134.
“Achieving one nanometer
equivalent oxide thickness in atomic layer deposited HfO2 on
In0.53Ga0.47As”,
K. Y. Lee (李昆育), P. Chang (張翔筆), Y. C. Chang (張耀中), M. L. Huang (黃懋霖), Y. J. Lee (李毅君), M. Hong (洪銘輝) and J.
Kwo (郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chiao Tung University, Jan. 23-25, 2008.
135.
“Inelastic Electron
Tunneling Spectroscopy Study of MOS Diodes Based on High-κ Gate
Dielectrics”,
C. J. Wang (王政鈞), S. L. You (游璇龍), C. C. Huang (黃建中), H. C. Ho (何信佳), J. Kwo (郭瑞年), P. Chang (張翔筆), W. C. Lee (李威縉), K. Y. Lee (李昆育), M. L. Huang (黃懋霖), Y. D. Wu (吳彥達), Y. J. Lee (李毅君), and M. Hong (洪銘輝), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chiao Tung University, Jan. 23-25, 2008.
136.
“Thickness-dependent
growth of epitaxial ZnO film on Si(111) using a
γ-Al2O3
buffer layer”, Y. H. Li (李岳勳)
W. R. Liu (劉維仁), W. C. Lee (李威縉), M. Hong (洪銘輝), J. Kwo (郭瑞年), C.-H. Hsu (徐嘉鴻), Z. K. Yang (楊智凱), B. H. Lin (林碧軒), and W. F. Hsieh (謝文峰), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chiao Tung University, Jan. 23-25, 2008.
137.
“Oxide scalability in Al2O3/Ga2O3(Gd2O3)/In0.2Ga0.8As/GaAs
MOS capacitors under high temperature annealing”,
K. H. Shiu(徐堃豪), C. H. Chiang(江宗鴻), P. Chang (張翔筆), W. C. Lee (李威缙), J. Kwo
(郭瑞年), and M. Hong(洪銘輝), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chiao Tung University, Jan. 23-25, 2008.
138.
“High
κ
dielectrics hcp Gd2O3 on GaN with an equivalent
oxide thickness approaching 0.5 nm”, W. H. Chang (張文馨), Y. C. Chang (張耀中), P. Chang (張翔筆), C. H. Lee (李志勛), M. L. Huang (黃懋霖), Y.J. Lee (李毅君), M. Hong (洪銘輝), J. Kwo
(郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chiao Tung University, Jan. 23-25, 2008.
139.
“High-κ dielectrics on
high carrier mobility semiconductors – structural, chemical, and
electrical characterizations”,
L. T. Tung (董烈廷), M. L. Huang(黃懋霖), Y. J. Lee(李毅君), K. Y. Lee(李昆育), P. Chang(張翔筆), K. H. Shiu(徐堃豪), M. Hong(洪銘輝), and J.
Kwo(郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chiao Tung University, Jan. 23-25, 2008.
140.
“High-κ gate dielectrics
in-situ deposited on
ultra high vacuum prepared Ge surface”,
B. H. Chin (覃炳華), W. C. Lee(李威縉), T. D. Lin(林宗達), C. H. Lee(李奇勳), M. Hong(洪銘輝), and J.
Kwo(郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chiao Tung University, Jan. 23-25, 2008.
141.
“Effective passivation of
nano-thick Y2O3/GaAs hetero-structure with
in situ Al2O3”,
Y. C. Leea (李易靜), M. L. Huang (黃懋霖), P. Chang (張翔筆), W. C. Lee (李威縉), M. Hong (洪銘輝) and J. Kwo (郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chiao Tung University, Jan. 23-25, 2008.
142.
“Interfacial engineering for high-quality epitaxial
ZnO on Si(111) using a thin Y2O3
buffer layer”, W. R. Liu (劉維仁),Y. H. Li (李岳勳), W. C. Lee(李威缙),Y. J. Lee(李毅君), B. H. Lin(林碧軒), Z. K. Yang (楊智凱), M. Hong (洪銘輝), J.
Kwo (郭瑞年), C.-H. Hsu (徐嘉鴻), and W. F. Hsieh (謝文峰), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chiao Tung University,
143.
“Electronic structure analysis of High-k HFO2
materials using electron energy loss spectroscopy (EELS)”, S. C. Liou (劉思謙), M. W. Chu (朱明文), C.H. Chen (陳正弦), Y. J. Lee(李毅君), M. Hong (洪銘輝), and
J. Kwo (郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chiao Tung University, Jan. 23-25, 2008.
144.
“Spin injection across Fe3Si/AlGaAs
interface deposited by molecular beam epitaxy”, C. Y. Hsieh (謝政義), H. C. Ho (何信佳), P. Chang (張翔筆), Y. N. Chiu (邱淵楠), Y. S. Lee (李奕昇), M. Hong (洪銘輝), and J. Kwo (郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chiao Tung University, Jan. 23-25, 2008.
145.
“Atomic-layer-deposited HfO2
on In0.53Ga0.47As – passivation and energy-band
parameters”, Y. C. Chang, K. Y. Lee, M. L. Huang, Y. J. Lee, T. D. Lin,
M. Hong, and J. Kwo, American
Physical Society March Meeting at New Orleans, Louisiana, March 10-14,
2008.
146.
“Inelastic Electron Tunneling Spectroscopy Study of
MOS Diodes Based on High-
Gate Dielectrics”, S. L. You, C. C. Huang, C. J.
Wang, H. C. Ho, J. Kwo, W. C.
Lee, K. Y. Lee, Y. D. Wu, Y. J. Lee, and M. Hong, American Physical
Society March Meeting at New Orleans, Louisiana,
147.
“Interfacial-layers-free Ga2O3(Gd2O3)/Ge
MOS Diodes”, C. H. Lee, T. D. Lin, K. Y. Lee, M. L. Huang, L. T. Tung,
M. Hong, and J. Kwo, American
Physical Society March Meeting at New Orleans, Louisiana, March 10-14,
2008.
148.
“Self-aligned
inversion-channel and D-mode InGaAs MOSFET using Al2O3/Ga2O3(Gd2O3)
as gate dielectrics”, T. D. Lin, C. P. Chen, H. C. Chiu, P. Chang, C. A.
Lin, M. Hong, J. Kwo, and W.
Tsai, Device Research Conference, U. C. Santa Barbara, June 24-27, 2008.
149.
“Inversion-channel GaN nMOSFET with atomic-layer-deposited Al2O3
as gate dielectric”, Y. C. Chang, W. H. Chang, H. C. Chiu, L. T. Tung,
C. H. Lee, K. H. Shiu, and M. Hong,
J. Kwo, J. M. Hong, and C. C.
Tsai. Device Research Conference, U. C. Santa Barbara,
150.
“MBE grown nm-thick single crystal Sc2O3 template
on Si for GaN overgrowth”, W. C. Lee, Y. J. Lee, C. H. Lee, S. Y. Wu,
J. Kwo, C. H. Hsu, H. M. Ng,
and M. Hong, the 15th International Molecular beam Epitaxy
Conference, Vancouver, Canada, Aug 4-8, 2008.
151.
“GaN metal oxide semiconductor diode with MBE-Al2O3
as a template followed by ALD growth - Electrical and interfacial
characteristics”, H. C. Chiu, C. H. Lee, W. H. Chang, W. C. Lee, Y. H.
Chang, J. Kwo, and M. Hong,
the 15th International Molecular beam Epitaxy Conference,
Vancouver, Canada, Aug 4-8, 2008.
152.
“High k
dielectrics
153.
“Characteristics
of Metal-Oxide-Semiconductor devices with MBE-Grown Y2O3
on Ge(100)”, L. K. Chu, W. C. Lee, C. H. Lee, M. Hong and
J. Kwo, the 15th International Molecular beam Epitaxy
Conference, Vancouver, Canada, Aug 4-8, 2008.
154.
“Molecular Beam Epitaxy Grown Al2O3/HfO2
High-κ Dielectrics for Germanium”, B. H. Chin, W. C. Lee, C. H.
Lee, L. K. Chu, Y. J. Lee, L. T. Tung, T. D. Lin, M. Hong, and
J. Kwo, the 15th International Molecular beam Epitaxy
Conference, Vancouver, Canada, Aug 4-8, 2008.
155.
“Inversion Channel Enhancement mode MOSFETs with Re-grown Source and
Drain Contacts”, C. Liao, D. Cheng, C. Cheng, K. Y. Cheng*, M. Feng, C.
H. Chiang, J. Kwo, and M.
Hong, the 15th International Molecular beam Epitaxy
Conference, Vancouver, Canada, Aug 4-8, 2008.
156.
“Depletion-mode InGaAs MOSFET with
MBE grown Ga2O3(Gd2O3)
gate dielectric”,
C. A. Lin, T.
D. Lin,
C. H. Chiang,
M. Hong, and
J. Kwo,
the 15th
International Molecular beam Epitaxy Conference, Vancouver, Canada, Aug
4-8, (2008).
157.
“Research on III-V and Ge nano-electronics for key technology beyond Si
CMOS”, Ming-Hwei Hong, J. Kwo,
M. L. Huang, T. D. Lin, Y. C. Chang, W. C. Lee, P. Chang, and L. K. Chu,
The 2nd IEEE Nanotechnology Materials and Devices Conference
(NMDC2008), Main Campus (Yoshida Campus) of Kyoto University, Japan, Oct
20-22, 2008.
158.
“Approaching Fermi Level
Unpinning in Oxide-In0.2GA0.8As”, T. H. Chiang, W. C. Lee,
T. D. Lin, D. Lin, K. H. Shiu, J.
Kwo, W. E. Wang, W. Tsai, and M. Hong, International Electron
Devices Meeting, San Francisco, CA, Dec 15-17, 2008. 2009
159.
“Study of Spin Injection from Fe3Si into
GaAs by Spin-Light Emitting Diode”, Y. S. Li (李奕昇), C. Y. Hsieh (謝政義), H. C. Ho(何信佳),P. Chang (張翔筆), M. Hong (洪銘輝), and J. Kwo (郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Changhua University of Education, Jan. 19-21, 2009. (優等獎)
160.
“In-situ investigation of interface between Gd2O3
and GaAs(100) by cross-sectional Scanning Tunneling Microscopy”, J. Y.
Shen (沈俊仰), M. C. Shih (施敏權), Y. P. Chiu (邱雅萍), M. L. Huang (黃懋霖), W. C. Lee (李威縉), T. H. Jiang (江宗鴻), M. Hong (洪銘輝), and J. Kwo (郭瑞年), the Taiwan AVS meeting, Jan. 19-21, 2009.
161.
“Direct Observation of interface structure in epitaxial Gd2O3
on GaAs(100) by STM”, Y. P. Chiu a(邱雅萍),
M. C. Shih (施敏權),
J. Y. Shen (沈俊仰), M.
Hong (洪銘輝), and J.
Kwo
(郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Changhua University of Education, Jan. 19-21, 2009.
162.
“DMO magnetism and structural analysis of Co doped
Y2O3 films”, C. N. Wu (巫啟男), Y. H. Chang (張宇行), Y. L. Soo (蘇雲良), W. C. Lee (李威縉), Y. J. Lee (李毅君), T. Y. Lai (賴德洋), M. Hong (洪銘輝), and J. Kwo (郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Changhua University of Education, Jan. 19-21, 2009.
163.
“Investigation of the Al2O3/Ga2O3(Gd2O3)/In0.2Ga0.8As/GaAs
gate stack by coherent phonon spectroscopy”, C. Y. Chuang (莊卓穎), Y.-M. Chang (張玉明), T. H. Chiang (江宗鴻), H. C. Chiu (邱漢欽), C. L. Chang (張嘉麟), M. Hong (洪銘輝), and J. Kwo (郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Changhua University of Education, Jan. 19-21, 2009.
164.
“Electrical analysis of Fermi level unpinning in Ga2O3(Gd2O3)/Ge
interface”,
R. L. Chu, L. K.
Chu, T. D. Lin, Y. C. Chang, M. Hong, and
J. Kwo, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Changhua
University of Education, Jan. 19-21, 2009.
165.
“Depletion-mode InGaAs MOSFET with MBE grown Ga2O3(Gd2O3)
gate dielectric”, C. A. Lin (林俊安), L. T. Tung (董烈廷), T. D. Lin (林宗達), T. H. Chiang (江宗鴻), M. Hong (洪銘輝), and J. Kwo (郭瑞年), American Vacuum Society (AVS) Workshop「Beyond Si CMOS」
& 2009 ROC Physical Society Annual Meeting, Changhua,
Taiwan, Jan. 19-21, 2009. (優等獎the best poster paper in the field of Semiconductors)
166.
“Approaching Fermi Level Unpinning in Oxide-In0.2Ga0.8As”,W.
C. Lee, T. H. Chiang, T. D. Lin, D. Lin, K. H. Shiu,
J. Kwo, W. E. Wang, W. Tsai, and M. Hong, 3rd
International Workshop on High k
Dielectrics on high Mobility Channel Materials, Hsinchu, Taiwan, Jan. 19th,
2009.
167.
"Energy-band parameters of atomic-layer-deposited Al2O3
and HfO2 on InxGa1-xAs", M. L. Huang,
Y. C. Chang, Y. H. Chang, T. D. Lin,
J. Kwo, and M. Hong, 3rd
International Workshop on High k
Dielectrics on high
Mobility Channel Materials, Hsinchu, Taiwan, Jan. 19th ,
2009.
168.
“Ge MOS devices with UHV-Ga2O3(Gd2O3)
without interfacial layers” L. K. Chu, T. D. Lin, C. H. Lee, W. C. Lee,
R. L. Chu, Y. C. Lee, C. C. Chang, M. Hong*, and
J. Kwo*, 3rd
International Workshop on High
k
Dielectrics on high
Mobility Channel Materials, Hsinchu, Taiwan, Jan. 19th, 2009.
169.
“Inversion-channel and D-mode GaN MOSFETs using atomic-layer-deposited
Al2O3 as gate dielectrics”, Y. C. Chang, W. H.
Chang, Y. H. Chang, L.T. Tung, D. Y. Lai, M. Hong*,
J. Kwo*, J. M. Hong, and C.
C. Tsai, 3rd International Workshop on High k
Dielectrics on high
Mobility Channel Materials, Hsinchu, Taiwan, Jan. 19th, 2009.
170.
"Achieving a low interfacial density of states in atomic layer deposited
Al2O3 on In0.53Ga0.47As", H.
C. Chiu, L. T. Tung, Y. H. Chang, Y. J. Lee, C. C. Chang,
J. Kwo, and M. Hong, 2009 APS
March meeting, Pittsburgh, USA, Mar. 16-20th, 2009.
171.
“Energy-band parameters of atomic-layer-deposited Al2O3
and HfO2 on InxGa1-xAs”,
M. L. Huang, Y. C. Chang, Y. H. Chang, T. D. Lin, M. Hong, and
J. Kwo, 2009 APS March
meeting, Pittsburgh, USA, Mar. 16-20th, 2009.
172.
"Inversion-channel GaN MOSFET using atomic-layer-deposited Al2O3
as gate dielectric", Y. C. Chang, Y. H. Chang, H. C. Chiu, Y. H.
Chang, L. T. Tung, C. H. Lee, M. Hong, J.
Kwo, J. M. Hong, C. C. Tsai, VLSI-TSA, April 27-29, 2009
173.
“Metal-Oxide-Semiconductor devices with UHV-Ga2O3(Gd2O3)
on Ge(100)”, L. K. Chu, T. D. Lin, C. H. Lee, L. T. Tung, W. C. Lee,R.
L. Chu, C. C. Chang, M. Hong, and
J. Kwo, VLSI-TSA, April 27-29, 2009.
174.
"Self-aligned inversion channel In0.53Ga0.47As
N-MOSFETs with ALD-Al2O3 and MBE-Al2O3/Ga2O3(Gd2O3)
as gate dielectrics", H. C. Chiu, T. D. Lin, P. Chang, W. C. Lee, C. H.
Chiang, J. Kwo, Y. S.
Lin, Shawn. S. H. Hsu, W. Tsai, M. Hong, VLSI-TSA, April 27-29, 2009.
175.
“High performance self-aligned inversion-channel
MOSFETs with In0.53Ga0.47As channel and ALD-Al2O3
gate dielectric”,
H. C. Chiu, P.
Chang, M. L. Huang, T. D. Lin, Y. H. Chang, J. C. Huang, S. Z. Chen,
J. Kwo, W. Tsai, and M. Hong, Device Research Conference, Penn State
University, University Park, PA on June 22-24, 2009.
176.
“Achieving
Nearly Free Fermi-Level Movement and Vth Engineering in Ga2O3(Gd2O3)/In0.2Ga0.8As”,
T. D. Lin, Y. D. Wu, Y. C. Chang, T. H. Chiang, C. Y. Chuang, C.
A. Lin, W. H. Chang, H. C. Chiu, W. Tsai,
J. Kwo, and M. Hong, Device
Research Conference, Penn State University, University Park, PA on June
22-24, 2009.
177.
"High quality Ga2O3(Gd2O3)
on Ge (100) – electrical and chemical characterizations", R. L. Chu, L.
K. Chu, M. L. Huang, L. T. Tung, T. D. Lin, C. C. Chang,
J. Kwo, and M. Hong, 26th North American Molecular Beam
Epitaxy Conference (NAMBE), Aug. 9-12, 2009.
178.
"MBE-HfAlO for passivating InGaAs with 1 nm capacitance effective
thickness", P. Chang, W. C. Lee, M. L. Huang, Y. J. Lee, M. Hong, and
J. Kwo, 26th North American Molecular Beam Epitaxy
Conference (NAMBE), Aug. 9-12, 2009.
179.
"RF characteristics of self-aligned inversion-channel In0.53Ga0.47As
MOSFETs using MBE-Al2O3/Ga2O3(Gd2O3)
gate dielectrics", T. D. Lin, P. Chang, H. C. Chiu,
J. Kwo, S. Lin, Shawn S. H. Hsu, and M. Hong, 26th North
American Molecular Beam Epitaxy Conference (NAMBE), Aug. 9-12, 2009.
180.
"Further study of epitaxial Y2O3 films on Si (111)
– lattice strain/relaxation and in-situ depth profiling", Y. J. Lee. W.
C. Lee, M. L. Huang, C. W. Nieh, C.-H. Hsu,
J. Kwo, and M. Hong, 26th
North American Molecular Beam Epitaxy Conference (NAMBE), Aug. 9-12,
2009.
181.
"Engineering of threshold voltages in MBE-grown Ga2O3(Gd2O3)/In0.2Ga0.8As",
Y. D. Wu, Y. C. Chang, T. D. Lin, T. H. Chiang,
J. Kwo, W. Tsai, and M. Hong, 26th North American
Molecular Beam Epitaxy Conference (NAMBE), Aug. 9-12, 2009.
182.
"Self-aligned inversion-channel In0.75Ga0.25As
MOSFETs using MBE-Al2O3/Ga2O3(Gd2O3)
and ALD-Al2O3 as gate dielectrics", T. D. Lin, H.
C. Chiu, P. Chang, Y. H. Chang, C. A. Lin, W. H. Chang,
J. Kwo, W. Tsai, and M. Hong, 39th European Solid-State Device
Research Conference (ESSDERC), Athens, Greece, Sep. 14-18, 2009.
183.
“High Performance Ga2O3(Gd2O3)/Ge
MOS Devices Without Interfacial Layers”, L. K. Chu, R. L. Chu, M. L.
Huang, L. T. Tung, T. D. Lin, C. C. Chang,
J. Kwo, and M. Hong, 39th
European Solid-State Device Research Conference (ESSDERC), Athens,
Greece, Sep. 14-18, 2009.
184.
"Nano-meter thick single
crystal hexagonal Gd2O3 on GaN for advanced
complementary metal-oxide-semiconductor technology"
Wen-Hsin Chang (張文馨), Chih-Hsun Lee (李志勛), Yao-Chung Chang (張耀中), Pen Chang (張翔筆), Mao-Lin Huang (黃懋霖), Yi-Jun Lee (李毅君), Chia-Hung Hsu (徐嘉鴻), J. Minghuang Hong (洪銘煌), Chiung-Chi Tsai (蔡炯棋), J.
Raynien Kwo (郭瑞年) and Minghwei Hong (洪銘輝), 15th NSRRC users' annual meeting, Hsinchu, Taiwan, Oct. 15-16, 2009.
185.
"High quality nano-thick Gd2O3
films on GaN"
S. Y. Wu (吳紹筠), T. Y. Lai (賴德洋), Y. J. Lee (李毅君), L. H. Lai (賴來宏), P. Chang (張翔筆), J. Kwo
(郭瑞年), C.-H. Hsu (徐嘉鴻) and M. Hong (洪銘輝), 15th NSRRC users' annual meeting, Hsinchu,
Taiwan, Oct. 15-16, 2009.
186.
“Enhancement-mode inversion-channel and depletion-mode GaN MOSFETs using
atomic-layer-deposited Al2O3 and HfO2
as gate dielectrics”, Y. C. Chang, W. H. Chang, Y. H. Chang,
J. Kwo, J. M. Hong, C. C.
Tsai and M. Hong, Symposium A, MRS Fall Meeting, Boston, Nov. 30 – Dec.
4, 2009.
187.
“Energy-band parameters of atomic-layer-deposited Al2O3
and HfO2 on InGaAs”, M. L. Huang, Y. C. Chang, Y. H. Chang,
T. D. Lin, P. Chang,
M. Hong* and J. Kwo*,
Symposium A, MRS Fall Meeting, Boston, Nov. 30 – Dec. 4, 2009.
188.
“Atomic-layer-deposited Al2O3 and HfO2
on InGaAs – electrical and interfacial micro-structural and
chemical characteristics”,
Y. J. Lee, M. L. Huang, Y. C. Chang, Y. H. Chang, H. C.
Chiu, P. Chang, J. Kwo* and
M. Hong*,
Symposium A, MRS Fall Meeting, Boston, Nov. 30 – Dec. 4, 2009.
189.
“The lasing characteristic of epitaxial ZnO films on Si (111) using Y2O3
buffer layer”, C. C. Kuo, W. R. Liu, W. F. Hsieh, C. H. hsu, W. C. Lee,
M. Hong, and J. Kwo,
Symposium A, MRS Fall Meeting, Boston, Nov. 30 – Dec. 4, 2009.
190.
“Charge Pumping Study of the Trap Density in CF4 treated TiN/Ga2O3(Gd2O3)/Ge”,
C. A. Lin,
L. K.
Chu,
T. D. Lin, R. L. Chu, L. T. Tung,
M. Hong* and J. Kwo*, SISC,
Washington Dc, Dec 3-5, 2009. 2010
191.
“DMO magnetism and structure study on Co doped Y2O3”,
C. N. Wu (巫啟男), S. Y. Huang (黃斯衍),
W. C. Lee (李威縉), Y. J. Lee (李毅君),
W. C. Lin (林薇甄), Y. H. Chang (張宇行),
T. S. Wu (吳泰興),
Y. L. Soo (蘇雲良),
M. Hong (洪銘輝) and
J. Kwo (郭瑞年),
中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Cheng
Kung University, Feb. 2-4, 2010.
獲優良壁報論文獎.
192.
“Electron tunneling spectroscopy study of silicon metal-oxide-semiconductor
diodes with HfO2 as gate dielectric”, W. Y. Wei (魏文耀), M. L. Huang (黃懋霖), S. Y. Huang (黃斯衍), W. C. Lee (李威縉), Y. H. Chang (張宇行), M. Hong (洪銘輝) and J. Kwo (郭瑞年)
, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Cheng Kung
University, Feb. 2-4, 2010.
獲優良壁報論文獎.
193.
“Investigation on the Fermi level pinning mechanism
of III-V’s by in-situ depositing ALD-Al2O3 on
GaAs”,
Y. H. Chang, M. L. Huang, P.
Chang, H. C. Chiu, J. Kwo and
M. Hong,
中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Cheng Kung
University, Feb. 2-4, 2010.
194.
“Magneto-optical properties of epitaxial Fe3Si
film on GaAs(001) ”, Y. C. Liu (劉有騏) , L. J. Chang (張良君) , S. Y. Huang (黃斯衍), H. Y. Hung (洪宏宜), P. Chang (張翔筆), S. F. Lee (李尚凡), M. Hong (洪銘輝) and J. Kwo
(郭瑞年),
中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Cheng Kung
University, Feb. 2-4, 2010.
195.
“Interfacial electronic structure of ALD-grown Al2O3
on n-GaAs by synchrotron radiation photoemission”,
M. L. Huang, Y. H. Chang, Y. J. Wang,
P. Chang, T. W. Pi, J. Kwo
and M. Hong,
中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Cheng Kung
University, Feb. 2-4, 2010.
196.
“Atomic-scale electronic structure at nm-thick
epitaxial Gd2O3 gate oxides on GaAs (100)”, B. C.
Huang , Y. P. Chiu, M. C. Shih, J. Y. Shen,
M. L. Huang, W. C. Lee, T. H. Chiang , M. Hong, and
J. Kwo,
中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Cheng Kung
University, Feb. 2-4, 2010.
197.
“Distribution of interfacial
trap density in
Ga2O3(Gd2O3)/In0.2Ga0.8As
by quasi- static CV measurement/simulation and conductance method”,
T. H. Chiang, H. C. Chiu, L. H. Lai, C.
A. Lin, W. H. Chang, Y. C. Chang, M. Hong, and
J. Kwo,
中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Cheng Kung
University, Feb. 2-4, 2010.
198.
“Strong crystal anisotropy of magneto-transport property
in
Fe3Si epitaxial films”, H.
Y. Hung, S.Y. Huang, P. Chang, W. C. Lin, S. F. Lee, M. Hong, and
J. Kwo,
中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Cheng Kung
University, Feb. 2-4, 2010.
199.“Interfacial electrical properties of high k
dielectrics on GaAs”, P. Chang, Y. H. Chang, Y. J. Chu, L. H. Lai, M.
Hong, and J. Kwo,
中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Cheng Kung
University, Feb. 2-4, 2010.
200.
“Field-Induced Second Harmonic Generation of a High k
Gate Dielectric / Ge(001) MOS Structure”,
C.
L. Chang
(張嘉麟), Y. M. Chang (張玉明) , L. K. Chu (朱龍琨), R. L. Chu (朱瑞霖), T. H Chiang(江宗鴻), M. Hong (洪銘輝), and
J. Kwo (郭瑞年),,
中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Cheng Kung
University, Feb. 2-4, 2010.
201.
“Strong crystal anisotropy
of magneto-transport property
in
Fe3Si epitaxial films”, H. Y. Hung,
S.Y. Huang, P. Chang, W. C. Lin, S. F. Lee, M. Hong and
J. Kwo,
APS March Meeting, Portland, Oregon, US, March 15-19, 2010.
202.
“In-situ XPS, STM and STS analyses of high k oxide/III-V interfaces”,
Y. H. Chang, M. L. Huang, P. Chang, J. Y. Shen, T. D. Lin,
T. W. Pi, M. Hong, and J.
Kwo,
APS March Meeting,
Portland, Oregon, US, March 15-19, 2010.
203.“Nano-meter
thick single crystal Gd2O3 on GaN for advanced
complementary metal-oxide-semiconductor technology”, W. H. Chang, C. H.
Lee, T. Y. Lai, Y. C. Chang, P. Chang, M. L. Huang, Y. J. Lee, C. –H.
Hsu, J. M. Hong, C. C. Tsai, J.
Kwo, and M. Hong, The 3rd Hsinchu - Tsukuba Joint Workshop, Hsinchu,
Taiwan, Apr. 2-3, 2010.
204.
“Interfacial electrical
properties of high k dielectrics on GaAs”,
Y. J. Chu, L. H. Lai, P. Chang,
Y. H. Chang, C. A. Lin, H. C. Chiu, M. Hong, and
J. Kwo, The 3rd Hsinchu -
Tsukuba Joint Workshop, Hsinchu, Taiwan, Apr. 2-3, 2010.
205. “Advanced GaN MOSFETs with ALD-high
k
oxides as gate dielectrics”, Y. C. Chang, W. H. Chang, Y.
H. Chang, J. M. Hong, C. C.
Tsai,
M. Hong and J. Kwo, 4th
International Workshop on High
k
Dielectric on High Carrier Mobility Channel Materials, Hsinchu, Taiwan,
May 25-27, 2010.
206.“In-situ HfO2-based high-k dielectrics for passivating InGaAs high mobility channel
materials”, P. Chang,
M. Hong
and J. Kwo, 4th
International Workshop on High
k
Dielectric on High Carrier Mobility Channel Materials, Hsinchu, Taiwan,
May 25-27, 2010.
207.“Insight of high-quality Ga2O3(Gd2O3)/Ge(100)
entity with fluorine incorporation”, R. L. Chu,
M. Hong and J. Kwo, 4th
International Workshop on High
k
Dielectric on High Carrier Mobility Channel Materials, Hsinchu, Taiwan,
May 25-27, 2010.
208."Self-aligned
inversion channel In0.2Ga0.8As/GaAs MOSFET with Al2O3/Ga2O3(Gd2O3)
gate dielectrics without interfacial passivation layer", W. H. Chang, T.
D. Lin, H. C. Chiu, C. A. Lin, T. H. Chiang, M. Hong and
J. Kwo, 4th International Workshop on High
k
Dielectric on High Carrier Mobility Channel Materials, Hsinchu, Taiwan,
May 25-27, 2010.
209.“Fermi level unpinning in oxide-InGaAs”,
W. C. Lee, T. H. Chiang, T. D. Lin, M. L. Huang, P. Chang, H. C. Chiu,
Y. C. Chang, L. T. Tung, K. H. Shiu, W. E. Wang, D. Lin, W. Tsai,
J. Kwo and M. Hong,
4th International Workshop on High
k Dielectrics on High Carrier Mobility Channels Materials, Hsinchu, Taiwan, May 25-27,
2010.
210.“Low
Interfacial Trap Density in Absence of Peak Features Near Midgap of Ga2O3(Gd2O3)
/ In0.2Ga0.8As Gate Stacks”, C. A. Lin, H.
C. Chiu, W. H. Chang, T. H. Chiang, Y. C. Chang, L. H. Lai, T. D. Lin,
J. Kwo,
W. E Wang, J.
Dekoster, M. Caymax, M. Meuris, M. Heyns,
and M. Hong,
4th International Workshop on High
k Dielectrics on High Carrier Mobility Channels Materials, Hsinchu, Taiwan, May 25-27, 2010.
211."Studies of the Fermi level pinning mechanism of III-V’s
by in-situ depositing ALD-Al2O3 on GaAs",
Y. H. Chang, M. L. Huang, P. Chang, J. Y. Shen,
Y. J. Chu, C.
L. Hsu, B. R. Chen, T. W. Pi, M. Hong and
J. Kwo, E-MRS Spring Meeting,
Strasbourg, France, June 7-11, 2010.
212."Distribution
of interfacial trap density in Ga2O3(Gd2O3)/In0.2Ga0.8As
by quasi- static CV measurement/simulation", T. H. Chiang, H. C. Chiu,
L. H. Lai, C. A. Lin, W. H. Chang, Y. C. Chang, M. Hong and
J. Kwo, E-MRS Spring Meeting, Strasbourg, France, June 7-11, 2010.
213.“H2S
Molecular Beam Passivation of Ge and III-V semiconductors for advanced
CMOS”, C. Merckling, Y. C. Chang, C. Y. Lu, J. Penaud, M. El-Kazzi, F.
Bellenger, G. Brammertz, M. Hong,
J. Kwo, M. Meuris, J. Dekoster, M. M. Heyns, M. Caymax, E-MRS Spring
Meeting, Strasbourg, France, June 7-11, 2010.
214. “Achieving high-performance Ge
MOS devices using
high-k
gate dielectrics Ga2O3(Gd2O3)
of sub-nm EOT”,
L. K. Chu, R. L. Chu, C. A. Lin, T. D. Lin, T. H. Chiang,
J. Kwo,and M. Hong,
the 68th Annual Device Research Conference, South Bend,
Indiana, US, June 21-23, 2010.
215.
“Great
reduction of interfacial traps in Al2O3/GaAs (100)
starting with Ga-rich surface and through systematic thermal annealing”,
Y. C. Chang, C. Merckling, J. Penaud, C. Y. Lu, G.
Brammertz, W. –E. Wang, M. Hong,
J. Kwo, J. Dekoster, M. Caymax, M. Meuris, and M. Heyns,
the 68th Annual Device Research Conference, South Bend,
Indiana,
US, June 21-23, 2010.
216.
“Thickness
dependence structural phase transition of Gd2O3
grown on GaN”, Chia-Hung Hsu, Wen Hsin Chang, Yi Jun Lee, Te-Yang Lai,
Chih-Hsun Lee, Pen Chang, Yao Chung Chang, Minghwei Hong, and
J. Raynien Kwo, SXNS-11, Northwestern University, Chicago, USA, July
13-17, 2010.
217.
"A1μm-gate-length
self-aligned inversion-channel MBE-grown Al2O3/Ga2O3(Gd2O3) /In0.75Ga0.25As
MOSFET exhibiting maximum drain current of 1.23 mA/μm", T. D. Lin, P.
Chang, H. C. Chiu, Y. D. Wu, Y. J. Lee,
J. Kwo and M. Hong,
16th
International Conference on Molecular Beam Epitaxy, Berlin, Germany,
August 22-27, 2010.
218.
“Strong
crystal anisotropy of magneto-transport property in Fe3Si
epitaxial films”, H. Y. Hung, S. Y. Huang, P. Chang, W. C. Lin, Y. C.
Liu, S. F. Lee, M. Hong, and J.
Kwo,
16th
International Conference on Molecular Beam Epitaxy, Berlin, Germany,
August 22-27, 2010.
219.
“Low
Interfacial Trap Density in Absence of Peak Features Near Midgap of Ga2O3(Gd2O3)/In0.2Ga0.8As
Gate Stacks”, C. A. Lin, H. C. Chiu, W. H. Chang, T. H. Chiang,
Y. C. Chang, L. H. Lai, T. D. Lin,
J. Kwo,
W. E Wang, J.
Dekoster, M. Caymax, M. Meuris, M. Heyns
and M. Hong, 16th
International Conference on Molecular Beam Epitaxy, Berlin, Germany,
August 22-27, 2010.
220.
"Phase
transformation of MBE-grown nm thick Y2O3 on GaN",
W. H. Chang, P. Chang, T. Y. Lai, Y. J. Lee,
J. Kwo, C. -H. Hsu, C. C. Tsai, J. M. Hong and M. Hong,
16th
International Conference on Molecular Beam Epitaxy, Berlin, Germany,
August 22-27, 2010.
221. “Achieving
sub-nanometer capacitive effective thickness in Ga2O3(Gd2O3)/In0.20Ga0.80As”,
W. C. Lee, T. H. Chiang, Y. D. Wu, Y. J. Lee,
J. Kwo, and M. Hong, 27th North American Conference on
Molecular Beam Epitaxy, Breckenridge, Colorado, September 26-29,2010.
222. “Self-aligned
inversion channel In0.2Ga0.8As/GaAs MOSFET with Al2O3/Ga2O3(Gd2O3)
gate dielectrics”, W. H. Chang, T. D. Lin, H. C. Chiu, C. A. Lin, T. H.
Chiang, M. Hong and J. Kwo,
27th North American Conference on Molecular Beam Epitaxy,
Breckenridge, Colorado, Sep. 26-29, 2010.
223.
“Magnetization reversal processes of epitaxial Fe3Si
film on GaAs (001)”, Y. C. Liu, S. Y. Huang, L. J. Chang, P. Chang, S.
F. Lee, M. Hong, and J. Kwo,
55th Annual conference on Magnetism & Magnetic Materials,
Atlanta, Georgia, USA, Nov. 14-18, 2010.
224.
“In-situ atomic layer deposition-Al2O3
on freshly MBE grown GaAs”, M. L. Huang, Y. H. Chang, P. Chang, C. A.
Lin, J. Kwo*, T. W. Pi, and
M. Hong*, 41st IEEE SISC, San Diego, CA, Dec. 2-4, 2010.
225.
“Interfacial electronic structure of Ga2O3(Gd2O3)
grown on n-Ge studied by synchrotron radiation photoemission”, T.-W.
Pi*, W. C. Lee, M. L. Huang, L. K. Chu, T. D. Lin, T. H. Chiang, Y. C.
Wang, J. Kwo*, and M. Hong,
41st IEEE SISC, San Diego, CA, Dec. 2-4, 2010. 2011
226.
“Room temperature
ferromagnetism in cluster free, Co doped Y2O3
dilute magnetic oxide”, C. N. Wu (巫啟男), S. Y. Huang (黃斯衍),
W. C. Lee (李威縉), Y. J. Lee
(李毅君),
W. C. Lin (林薇甄), Y. H. Chang (張宇行),
T. S. Wu (吳泰興),
Y. L. Soo (蘇雲良),
M. Hong (洪銘輝), and
J. Kwo (郭瑞年) , 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Taiwan Normal University, Taiepi, Jan.
25-27, 2011.
227.
“Low-frequency
tunneling current noise in III-V metal-oxide-semiconductor capacitors”,
W. Y. Wei (魏文耀), Po-Wen Cheng
(鄭博文), H. C. Chiu (邱漢欽), S. Y. Huang (黃斯衍), J. C. Chen (陳正中), M. Hong (洪銘輝), and J. Kwo (郭瑞年),
中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China) , National Taiwan Normal University, Taipei, Jan.
25-27, 2011.
228.
“Anisotropic and magneto-transport property in Fe3Si epitaxial
films”, H. Y. Hung (洪宏宜), Y. C. Liu (劉有騏) , S.Y. Huang (黃斯衍), P. Chang (張翔筆), W. C. Lin (林薇甄), S. F. Lee (李尚凡), M. Hong (洪銘輝), and J. Kwo (郭瑞年), 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Taiwan Normal University, Taipei, Jan. 25-27, 2011.
229.
“Room
temperature ferromagnetism in cluster free, Co doped Y2O3
dilute magnetic oxide”, C. N. Wu, S. Y. Huang, W. C. Lee, Y. J. Lee, W.
C. Lin, Y. H. Chang, T. S. Wu, Y. L. Soo, M. Hong, and
J. Kwo, APS March Meeting, Dallas, Texas, US, March 21-25, 2011.
230.
“Atomic-scale evolution of interfacial electronic band
alignment in epitaxial Gd2O3 on GaAs (100)”, Y. P.
Chiu, B. C. Huang, M. C. Shih, J. Y. Shen, P. Chang, T. H. Chiang, C. S.
Chang, M. L. Huang, M. Hong, and
J. Kwo, APS March Meeting, Dallas, Texas, US, March 21-25, 2011.
231.
“Atomic-layer-deposited Al2O3 and HfO2
on GaN: a comparative study on interfaces and electrical
characteristics”,
Y. C. Chang, M. L. Huang, Y. H. Chang, Y. J. Lee, H. C. Chiu,
J. Kwo, and M. Hong, INFOS’
2011, Grenoble, France, (2011).
232.
“Atomic layer deposition of Al2O3
on pristine Ga-rich n-GaAs(001)-4x6 surface: An in-situ
synchrotron-radiation photoemission study”,
Y. H. Chang,
M. L. Huang, P. Chang, J. Y. Shen, B. R. Chen, T. W.
Pi, M. Hong, and J. Kwo,
INFOS’ 2011, Grenoble, France,
(2011).
233.
“Direct measurement of interfacial structure in epitaxial Gd2O3
on GaAs (100) using scanning tunneling microscopy”,
Y. P. Chiu, M. C. Shih, B. C. Huang, J. Y. Shen, M. L. Huang, W. C. Lee,
P. Chang, T. H. Chiang, C. S. Chang, M. Hong, and
J. Kwo,
INFOS’ 2011, Grenoble,
France, (2011).
234.
“InAs
MOS devices with
MBE-grown
Gd2O3 passivation”,
C. A.
Lin, P.-C. Chiu, M. L. Huang, H.-K. Lin,
T. H. Chiang,
W. C. Lee, Y. C. Chang, Y. H. Chang,
J.-I. Chyi, G. J. Brown,
J. Kwo,
and M. Hong,
28th Northern
American Molecular Beam Epitaxy Conference, University of California,
San Diego, Aug. 14-17, 2011.
235.
“Optimization
of non-gold ohmic metal contacts for advanced GaAs-based CMOS device”,
W. H. Chang, T. H. Chiang, T. D. Lin, Y. H. Chen, K. H. Wu, T. S. Huang,
M. Hong, and J. Kwo,
28th Northern
American Molecular Beam Epitaxy Conference, University of California,
San Diego, Aug. 14-17, 2011.
236.
“Molecular
Beam Deposition of HfAlOx/ and HfO2/Al2O3
High-k
Dielectrics on In0.53Ga0.47As/InP (001)”,
L. K. Chu, C. Merckling, A. Alian, J. Dekoster, J.
Kwo,
M. Hong, M. Caymax, and M.
Heyns, 28th Northern American Molecular Beam Epitaxy
Conference, University of California, San Diego, Aug. 14-17, 2011.
237.
“Clean GaAs(111)A-(2×2) surface and Gd2O3/GaAs(111)A
interface : in-situ
synchrotron radiation photoemission study”, Mao-Lin Huang (黃懋霖), Bor-Rong Chen (陳柏蓉), Tsung-Da Lin (林宗達), Tsung-Hung Chiang (江宗鴻), Kai-Hsuan Lee (李凱璿), Jyun-Yang Shen (沈俊仰), Tun-Wen Pi (皮敦文), J. Raynien Kwo(郭瑞年), and Minghwei Hong (洪銘輝),17th
NSRRC Users’ Meeting & Workshop, Hsin chu, Oct. 19-21, 2011.
238.
“Interfacial Electronic Structure of ALD Al2O3 on
the Clean GaAs(001)-4x6 Surface: A High-Resolution Synchrotron Radiation
Photoemission Study”, T.-W. Pi, M. L. Huang, Y. H. Chang, P.
Chang, J. Y. Shen, B. R. Chen, K. H. Lee, G. K. Wertheim, M. Hong, and
J. Kwo, 42nd IEEE SISC (Semiconductor Interface Specialists
Conference), Arlington, VA, Dec. 1-3, 2011.
239.
“Fermi level unpinning in metal/oxide and oxide/III-V interfaces: metal
gates on MBE-grown Al2O3/Ga2O3
(Gd2O3)/ In0.2Ga0.8As/GaAs
heterostructures”, Y. C. Chang, W. C. Hsu, T. H. Chiang, C. A.
Lin, Y. D. Wu, J. Kwo, and M. Hong, 42nd IEEE
SISC(Semiconductor Interface Specialists Conference), Arlington, VA,
Dec. 1-3, 2011. 2012 240. “Interfacial electronic structure of high k Al2O3 on the clean GaAs(001)- 4X6 surface”, T. W. Pi, M. L. Huang, Y. H. Chang, P. Chang, J. Y. Shen, B. R. Chen, J. Kwo and M. Hong,中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chung-Cheng University, Chiayi, Taiwan, Jan. 17-19, 2012. 241. “Detection of inverse spin hall effect in ferromagnetic/metal films”, H. Y. Hung, G. Y. Luo, Y. C. Chiu, P. Chang, J. G. Lin, S. F. Lee, M. Hong and J. Kwo, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chung-Cheng University, Chiayi, Taiwan, Jan. 17-19, 2012. 242. “Study on strontium ruthenate thin films: Growth, structure”, C. N. Wu, Yu-Chi Liu, Shuyuan Huyan, Siou-Yong Lin, M. Hong and J. Kwo, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), National Chung-Cheng University, Chiayi, Taiwan, Jan. 17-19, 2012. 243. “Mapping the band profile across the Gd2O3/GaAs (100) hetero-interface”, Y. P. Chiu, B. C. Huang , M. C. Shih, J. Y. Shen, P. Chang, C. S. Chang, M. L. Huang, M. -H. Tsai, M. Hong, and J. Kwo, presented at the March Meeting of the American Physical Society, Boston, Massachusetts, Feb. 27-Mar. 2, 2012. 244. “In-situ MBE and ALD deposited HfO2 on In0.53Ga0.47As”, W. C. Lee, C.A. Lin, M.L. Huang, J. Kwo, Y.H. Chang and P. Chang, presented at the March Meeting of the American Physical Society, Boston, Massachusetts, Feb. 27-Mar. 2, 2012. 245. “In-situ photoemission analyses of ALD-oxide/InxGa1-xAs (001) interfaces”, M. L. Huang, W. C. Lee, C. A. Lin, H. Y. Lin, J. Kwo, Y. H. Chang, T. H. Chiang, T. D. Lin, M. Hong and T. -W. Pi, presented at the March Meeting of the American Physical Society, Boston, Massachusetts, Feb. 27-Mar 2, 2012. 246. “Investigation of MBE-grown In0.53Ga0.47As (001) 4X2 surface and in-situ ALD TEMAH dosed surface by STM”, Y. C. Liu (劉有騏), M. L. Huang (黃懋霖), T. D. Lin (林宗達), W. C. Li (李威縉), W. W. Pai (白偉武), M. Hong (洪銘輝), and J. Kwo (郭瑞年), Taiwan Spectroscopy Conference, Wu-ling, Taiwan, Jul. 25-28, 2012. 247.“Influence of initial GaAs reconstructed surfaces on the inversion-channel GaAs MOSFETs”, Y. C. Chang, C. Merckling, W. H. Chang, J. Kwo, and M. Hong, International MBE conference, Nara, Japan, Sep, 24-28, 2012. 248.“Thermodynamic stability of MBE-HfO2 on In0.53Ga0.47As”, T. D. Lin, P. Chang, W. C. Lee, M. L. Huang, C. A. Lin, J. Kwo, and M. Hong, International MBE conference, Nara, Japan, Sep, 24-28, 2012. 249. “Investigation of crystalline Gd2O3 phase transformation for advanced GaN MOS devices”, W. H. Chang, S.Y. Wu, P. Chang, C. H. Lee, T.Y. Lai, Y. J. Lee, T. S. Huang, C. H. Hsu, J. Kwo, and M. Hong, International MBE conference, Nara, Japan, Sep, 24-28, 2012. 250. "In-situ deposited high k dielectrics for high performance InGaAs MOS", T. D. Lin, J. Kwo, and M. Hong, 9th International Symposium on Advanced Gate Stack Technology, Saratoga Springs, NY, USA, Oct. 3-4, 2012. 251. “Electrical Analysis of InxGa1-xAs MOS Devices Passivated by ALD and MBE High-k Dielectrics”, C. A. Lin, T. H. Chiang, Y. H. Chang, T. D. Lin, W. C. Lee, P.-C. Chiu, J.-I. Chyi, J. Kwo, and M. Hong, 9th International Symposium on Advanced Gate Stack Technology, Saratoga Springs, NY, Oct. 3-4, 2012. 252. “Investigation of MBE-grown In0.53Ga0.47As (001) 4x2 surface and in-situ ALD TEMA-Hf dosed surface by STM”, Y. C. Liu, M. L. Huang, T. D. Lin, Y. T. Liu, W. C. Lee, W. W. Pai, M. Hong and J. Kwo, Semiconductor Interface Specialist Conference, San Diego, CA, Dec. 5-7, 2012. 253. “An improved interfacial passivation of employing molecule beam epitaxy grown Ge epi-layer on Ge(100) substrate and in-situ high k dielectric deposition”, R. L. Chu, W. C. Lee, Y. C. Liu, Y. C. Chang, H. Y. Lin, M. L. Huang, J. Kwo, and M. Hong, Semiconductor Interface Specialist Conference”, San Diego, CA, Dec. 5-7, 2012.
254. “InGaAs(001) surfaces and native oxide free high k
interfaces”, T.-W. Pi, T. D. Lin, H. Y. Lin, Y. T. Liu, Y. C.
Chang, M. L. Huang, Y. H. Chang, G. K. Wertheim, J. Kwo, and M. Hong,
Semiconductor Interface Specialist
Conference, San Diego, CA, Dec. 5-7, 2012.
2013 255. “Observation of Room Temperature Ferromagnetism in Cluster Free, Co doped Y2O3 Dilute Magnetic Oxide Films”, C. N. Wu, S. Y. Huang, W. C. Lee, Y. H. Chang, T. S. Wu, Y. L. Soo, M. Hong*, and J. Kwo*, MMM/Intermag 13th Joint conference, Chicago, IL, Jan., 14-16, 2013. 256. “Detection of inverse spin Hall effect in epitaxail ferromagnetic metal films”, H. Y. Hung, G. Y. Luo, Y. C. Chiu, P. Chang, W. C. Lee, J. G. Lin, S. F. Lee, M. Hong*, and J. Kwo*, MMM/Intermag 13th Joint conference, Chicago, IL, Jan., 14-16, 2013. 257. “Study of in-situ atomic-layer-deposited Al2O3 on GaAs (001) with different initial GaAs reconstructed surfaces“, Y. T. Liu, H. Y. Lin, T. H. Chiang, Y. C. Chang, J. Kwo*, and M. Hong*, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), Dung Tua University, Jan 29-31, 2013. 258. “DLTS Measurement for low midgap interfacial trap density in In0.53Ga0.47As MOSCAPs by in-situ atomic-layer-deposited HfO2 passivation”, C. A. Lin, M. C. Hsieh, C. L. Tsai, Y. H. Chang, T. D. Lin, J. F. Chen, M. Hong*, and J. Kwo*,中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), Dung Tua University, Jan 29-31, 2013. 259. “Correlation of SrRuO3 film composition with in pulse laser deposition parameters”, S. Y. Huyan, Chi-nanWu, J.Y. Lee, C.Y. Lin, M. Hong*, and J. Kwo*, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), Dung Tua University, Jan 29-31, 2013. 260. “XRD and XPS research on SrRuO3 thin films: Ruthenium/Strontium composition, c-axis lattice constant and resistivity”, J. Y. Lee, Chi-nan Wu, S. Y. Huyan, C. Y. Lin, M. Hong*, and J. Kwo*, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), Dung Tua University, Jan 29-31, 2013. 261. “STM investigation on MBE-grown In0.53Ga0.47As (001) 4x2 surface and in-situ ALD TEMA-Hf dosed surface”, Y. C. Liu, M. L. Huang, T. D. Lin, Y. T. Liu, W. C. Lee, H. Y. Lin, W. W. Pai, M. Hong* and J. Kwo*, 中華民國物理年會 (Annual Meeting of the Physical Society of the Republic of China), Dung Tua University, Jan 29-31, 2013. 262. “Emergent two-dimensional layered materials by molecular beam epitaxy “, H. Y. Lin, Y. H. Lin, P. H. Lin, T. H. Chiang, Y. C. Liu, Y. W. Chen, Y. H. Lee, C. H. Hsu, M. Hong*, and J. Kwo*, Conf. of Northern of American MBE, Oct., 2013, Bamff, Canada.263. “Epitaxial thin-film growth of perovskite Strontium Ruthenate Ruddlesden-Popper series by Laser MBE dual target deposition”, S. Y. Huyan, C. N. Wu, J. Y. Lee, Y. C. Liu, C. F. Lee, H. Y. Lin, Y. W. Chen, M. Hong* and J. Kwo*, Conf. of Northern of American MBE, Oct., 2013, Bamff, Canada. 264. “Surface passivation of GaSb(100) using MBE-Y2O3 as gate dielectric”, R. L. Chu, W. J. Hsueh, T. H. Chiang, W. C. Lee, H. Y. Lin, G. J. Brown, T. W. Pi, J. I. Chyi, J. Kwo, and M. Hong, 30th North American Molecular Beam Epitaxy Conference (NAMBE), Oct. 6-9, 2013, Bamff, Canada. 265. “Direct Spin Injection into GaAs from Ferromagnetic Fe3Si Films“, H. Y. Hung, C. H. Chiang, B. Z. Syu, J. G. Lin, S. F. Lee, M. Hong*, and J. Kwo*”, Conf. Magnetism and Magnetic Materials, Denver, Nov. 4-8, 2013.
266. “Perfecting high
κ/GaSb(100)
interface using molecule beam epitaxy
Y2O3”, R. L.
Chu, W. J. Hsueh, T. H. Chiang, W. C. Lee, H. Y. Lin,
T. D. Lin, C. H. Fu, G. J. Brown,
T. W. Pi, J. I. Chyi, J. Kwo, and M. Hong,
44th IEEE
Semiconductor Interface Specialists Conference (SISC), Virginia, USA, Dec. 5-7, 2013.
2014 267. “ARPES and XPS study of Bi2Se3 and Bi2Te3 thin films: the relationship between chemical composition and doping level on as-grown TI films”, Jian-Feng Li(李健逢), Po-Hao Lin(林柏皓), Hsiao-Yu Lin(林孝于), Cheng-Maw Cheng (鄭澄懋), M. Hong(洪銘輝), and J. Kwo(郭瑞年), 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Chung Hsing University, Taichung, Jan. 21-23, 2014. Excellent poster award. 268. “Epitaxial thin film growth of perovskite Sr2RuO4 by pulsed laser deposition”, S. Y. Huyan(呼延澍元), C. N. Wu(巫啟男), J. Y. Lee(李俊逸), Y. C. Liu(劉有騏), J. F. Lee(李健逢), H. Y. Lin(林孝于), Y. W. Chen(陳昱維), T. L. Hung(洪慈蓮), M. Hong(洪銘輝), and J. Kwo(郭瑞年), 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Chung Hsing University, Taichung, Jan. 21-23, 2014. 269. “Materials Properties of High Quality Bi2Te3 Thin Films by Molecular Beam Epitaxy”, P. H. Lin(林柏皓), C. Y. Lin(林孝于), J. F. Lee(李健逢), Z. K. Zheng(鄭兆凱), M. Hong(洪銘輝), and J. Kwo(郭瑞年), 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Chung Hsing University, Taichung, Jan. 21-23, 2014. 270. “Comparison of methods to extract interface state densities at atomic-layer-deposited high- k dielectric/III-V heterostructures”, Y. T. Fanchiang(范姜宇廷), Y. K. Su(蘇毓凱), K. S. Chen(陳冠雄), Y. C. Chang(張耀中), T. H. Chiang(江宗鴻), J. Kwo(郭瑞年), and M. Hong(洪銘輝), 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Chung Hsing University, Taichung, Jan. 21-23, 2014. 271. “The dependence of spin-injection efficiency on Schottky barrier heights between Fe¬3Si and n-(or p-) GaAs(100)”, B. Z. Syu(許倍準), H.Y. Hung(洪宏宜), T. H. Chiang(江宗鴻), J. G. Lin(林昭吟), S. F. Lee(李尚凡) , M. Hong(洪銘輝), and J. Kwo(郭瑞年), 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Chung Hsing University, Taichung, Jan. 21-23, 2014. 272. “Transport and XPS study of insulator: Bismuth Selenide and Bismuth Telluride”, C. Y. Wang(王澄宇), C. Y. Lin(林孝于), Po-Hao Lin(林柏皓topological), Jian-Feng Li(李健逢), S. F. Lee(李尚凡), M. Hong(洪銘輝), and J. Kwo(郭瑞年), 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Chung Hsing University, Taichung, Jan. 21-23, 2014. 273. “Growth Mechanism of Fe3Si on GaAs(100) and GaAs(111) by Scanning Tunneling Microscopy”, Y. W. Chen(陳昱維), Y. C. Liu(劉有騏), T. H. Chiang(江宗鴻), H. Y. Hung(洪宏宜), M. Hong(洪銘輝), and J. Kwo(郭瑞年), 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Chung Hsing University, Taichung, Jan. 21-23, 2014.
274.“An
Investigation of Ni-InGaAs Source/Drain Ohmic Contact for III-V CMOS”,
C.H. Fu(傅千驊), W. H. Chang (張文馨), R. L. Chu(朱瑞霖), T. D. Lin(林宗達), T. H. Chiang(江宗鴻), Y. D. Wu(吳彥達), J. Kwo(郭瑞年) and M. Hong(洪銘輝), 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Chung Hsing University, Taichung, Jan. 21-23, 2014.
2015 281.“The effect of substrates on the materials properties of topological insulator films”, K. H. M. Chen (陳可璇), H. Y. Lin (林孝于), C. Y. Wang (王澄宇), C. K. Cheng (鄭兆凱), X. Q. Zhang (張鋅權), Y. H. Lee (李奕賢), C. M. Cheng (鄭澄懋), M. Hong (洪銘輝), and J. Kwo (郭瑞年), 中華民國物理年會(Annual Meeting of the Physical Society of Taiwan), National Tsing Hua University, Hsinchu, Jan. 28-30, 2015. Excellent poster award. 2016 2017 2018 2019 2020
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