清大物理---先進奈米薄膜實驗室

Group SCI Papers

研究群 SCI 論文

[2003]

1. “Rapid Post-metallization annealing effects on High  Y2O3/Si capacitor” , T. S. Lay*, Y. Y. Liao, W. D. Liu, Y. H. Lai, W. H. Hung, J. Kwo, M. Hong, and J. P. Mannaerts, Solid-State Electronics, 47, No. 6, p. 1021-1025, (2003). （Cited：2, SCI：1.247）

2. “Advances in High  Gate Dielectrics for Si and III-V Semiconductors”, J. Kwo*, M. Hong, B. Busch, D. A. Muller, Y. J. Chabal, A. R. Kortan*, J. P. Mannaerts, B. Yang, P. Ye, H. Gossmann, A. M. Sergent, K. K. Ng, J. Bude, W. H. Schulte, E. Garfunkel, and T. Gustafsson, J. Crystal Growth, 251, 645-650, (2003). （Cited：21, SCI：1.681）

3. “Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric”, B. Yang*, P. D. Ye, J. Kwo, M. Frei, H. Gossmann, J. P. Mannaerts, M. Sergent, M. Hong, K. Ng, and J. Bude, J. Crystal Growth, 251, 837-842, (2003). （Cited：4, SCI：1.681）

4. “GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition”, P. D. Ye*, G. D. Wilk, J. Kwo, B. Yang, H.-J. L. Gossmann, M. R. Frei, S. N. G. Chu, J. P. Mannaerts, M. Sergent, M. Hong, K. Ng, and J. Bude, IEEE Electron Device Letters 24, No.4, 209-211, (2003). （Cited：25, SCI：2.825）

5. “Optimization of AuGe/Ni/Au ohmic contacts for GaAs MOSFETs”, H. C. Lin*, S. Senanayake, and K. Y. Cheng, M. Hong, J. Kwo, B. Yang, and J. P. Mannaerts, IEEE Trans. Electron Dev., 50, No. 4, 880-885, (2003). （Cited：0, SCI：2.105）

6. “Schottky Barrier Height and Interfacial State Density on Oxide-GaAs Interface”, J. S. Hwang*, M. F. Chen, C. C. Chang, M. F. Chen, C. C. Chen, K. I. Lin, F. C. Tang, M. Hong, and J. Kwo, J. Appl. Phys. 94, 348-353, (2003). （Cited：3, SCI：2.498）

7. “GaAs MOSFET with nm-thin dielectric grown by atomic layer deposition”, P. D. Ye*, G. D. Wilk, B. Yang, J. Kwo, S. N. G. Chu, S. Nakahara, H.-J. L. Gossmann, J. P. Mannaerts, M. Hong, K. K. Ng, and J. Bude, Appl. Phys. Lett. 83, 180-182, (2003). （Cited：30, SCI：4.127）

[2004]

8. “Depletion Mode InGaAs Metal Oxide Semiconductor Field Effect Transistor with Gate Oxide Dielectrics Grown by Atomic Layer Deposition “, P. D. Ye*, G. D. Wilk, B. Yang, J. Kwo, H. J. L. Gosserman, M. Hong, K. K. Ng, and J. Bude, Appl. Phys. Lett., 84, 434-436, (2004). （Cited：11, SCI：4.127）

9. “GaAs-based metal-oxide-semiconductor field-effect-transistors with Al2O3 gate dielectrics grown by atomic layer deposition”, P. D. Ye*, G. D. Wilk, B. Yang, J. Kwo, H. J. L. Gossmann, M. Frei, J. P. Mannaerts, M. Sergent, M. Hong, K. K. Ng, and J. Bude, J. Electron. Mater. 33, 912-915, (2004). (Cited：3, SCI：1.358）

[2005]

10. “Thin single crystal Sc2O3 films Epitaxially grown on Si (111)”, C. P. Chen, M. Hong*, J. Kwo, H. M. Cheng, Y. L. Huang, S. Y. Lin, J. Chi, H. Y. Lee, Y. F. Hsieh, and J. P. Mannaerts, Journal of Crystal Growth 278, 638–642, 2005. (Cited：3, SCI：1.681）

11. “MBE Grown High κ Gate Dielectrics of HfO2 and (Hf-Al)O2 for Si and III-V Semiconductors Nano-electronics, W. G. Lee, Y. J. Lee, Y. D. Wu, P. Chang, Y. L. Hsu, C. P. Chen, J. P. Mannaerts , S. Maikap, C. W. Liu, L. S. Lee, M. J. Tsai, S. Y. Lin, T. Gustffson, M. Hong, and J. Kwo*, J. Crystal Growth, 278, 619-623, (2005) （Cited：3, SCI：1.681）

12. “Depth Profile Study of the Electronic Structures at Ga2O3(Gd2O3) and Gd2O3/GaN interfaces by x-ray photoelectron spectroscopy. “, T. S. Lay*, Y. Y. Liao, W. H. Hung, M. Hong, J. Kwo, and J. P. Mannaerts, J. Crystal Growth, 278, 624-628, (2005). （Cited：1, SCI：1.681）

13. “Depth-Profiling the Electronic Structures at HfO2/Si Interface Grown by Molecular Beam Epitaxy”, T. S. Lay*, S. C. Chang, C. C. Yeh, W. H. Hung, J. Kwo and M. Hong, NAMBE 2004 – 22nd North American MBE conference – Banff, Alberta, Canada October 11-13, 2004, J. Vac. Sci.Technol., B 23 (3), 1291-1293, (2005). （Cited：10, SCI：1.626）

14.“Thermodynamic stability of Ga2O3 (Gd2O3)/GaAs Interface at High Temperatures”, Y. L. Huang, P. Chang, Z. K. Yang, Y. J. Lee, H. Y. Lee, H. J. Liu, J. Kwo, J. P. Mannaerts, and M. Hong*, Appl. Phys. Lett., 86, 191905, (2005). （Cited：10, SCI：4.127）

15. “High-quality nanothickness Single Crystal Sc2O3 Films Grown on Si (111)”, M. Hong*, A. R. Kortan, P. Chang, C. P. Chen, Y. L. Huang, H. Y. Chou, H. Y. Lee, J. Kwo, M.-W. Chu, C. H. Chen, L. Goncharova, E. Garfunkel, and T. Gustafsson, Appl. Phys. Lett, 87, 251902, (2005). （Cited：4, SCI：4.127）

16. “High-quality thin Single Crystal γ-Al2O3 Films Grown on Si (111)”, S. Y. Wu, M. Hong*, A. R. Kortan, J. Kwo, J. P. Mannaerts, W. G. Lee, and Y. L. Huang, Appl. Phys. Lett, 87, 091908, (2005). （Cited：5, SCI：4.127）

17. “Surface Passivation of III-V Compound Semiconductors Using Atomic-layer-deposition Grown Al2O3”, M. L. Huang, Y. C. Chang, C. H. Chang, Y. J. Lee, and P. Chang, J. Kwo, T. B. Wu, and M. Hong*, Appl. Phys. Lett., 87, 252104, (2005). （Cited：25, SCI：4.127.）

[2006]

18. “Structure of Sc2O3 films epitaxially grown on -Al2O3 (0001), A. R. Kortan*, N. Kopylov, J. Kwo, M. Hong*, C. P. Chen, J. P. Mannaerts, and S. H. Liou, Appl. Phys. Lett. 88, 021906, (2006). （Cited：4, SCI：3.977）.

19. “Scanning Atomic Force Microscopic Nanolithography on Hafnium Oxide Thin Film Grown on Si (100)”, Rong-Li Lo*, W.-C. Lee and J. Kwo, Jpn. J. Appl. Phys. 45, 2067, (2006). （Cited：03, SCI：1.222）

20. “Energy-band parameters of atomic-layer-deposition-Al2O3/InGaAs heterostructures”, M. L. Huang, Y. C. Chang, C. H. Chang, T. D. Lin, J. Kwo, T. B. Wu, and M. Hong*, Appl. Phys. Lett. 89, 012903, (2006). （Cited：7, SCI：3.977）.

21. “Structural and electrical studies of Ga2O3(Gd2O3)/GaAs under high temperature annealing”, C. P. Chen, Y. J. Lee, Y. C. Chang, Z. K. Yang, M. Hong*, J. Kwo, H. Y. Lee, and T. S. Lay, J. Appl. Phys. 100, 104502, (2006). （Cited：0, SCI：2.316）

22. “Structure of HfO2 films epitaxially grown on GaAs (001)”, C. H. Hsu, P. Chang, Z. K. Yang, Y. J. Lee, M. Hong, J. Kwo*, C. M. Huang, and H. Y. Lee, Appl. Phys. Lett. 89, 122907, (2006). （Cited：4, SCI：3.977）.

23. “A molecular beam epitaxy grown template for subsequent atomic layer deposition of high  dielectrics”, K. Y. Lee, W. C. Lee, Y. J. Lee, M. L. Huang, C. H. Chang, T. B. Wu, M. Hong, and J. Kwo*, Appl. Phys. Lett. 89, 222906, (2006). （Cited：1, SCI：3.977）.

24. “Interfacial self-cleaning of atomic layer deposition of HfO2 gate dielectrics on In0.15Ga0.85As”, C. H. Chang, Y. K. Chiu, Y. C. Chang, K. Y. Lee, T. D. Lin, T. B. Wu*, M. Hong, and J. Kwo, Appl. Phys. Lett. 89, 242911 (2006). (Cited：4, SCI：3.977）.

[2007]

25. “A novel approach of using a MBE template for ALD growth of high  dielectrics”, K. Y. Lee, W. C. Lee, M. L. Huang, C. H. Chang, Y. J. Lee, Y. K. Chiu, T. B. Wu, M. Hong and J. Kwo*, Journal of Crystal growth, 301-302, 378-380, (2007). （Cited：0, SCI：1.809）

26. “MBE Grown High-Quality Gd2O3/ Si (111) Heterostructure”, T. D. Lin, M. C. Hang, P. Chang, W. C. Lee, Z. K. Yang, H. Niu, C. H. Hsu, J. Kwo, and M. Hong*, Journal of Crystal growth, 301-302, 386-389, (2007). （Cited：2, SCI：1.809）

27. “MBE grown high κ dielectrics of Ga2O3(Gd2O3) for GaN”, Y. C. Chang, Y. N. Chiu, S. Y. Wu, H. C. Chiu, P. Chang, Y. J. Lee, J. Kwo, Y. H. Wang, and M. Hong*, Journal of Crystal growth, 301-302, 390-393, (2007). （Cited：0, SCI：1.809）

28. “Structural and Magnetic properties of Epitaxial Fe3Si/GaAs Heterostructures”, Y. L. Hsu, M. L. Huang, Y. N. Chiu, C. C. Ho, P. Chang, C. H. Hsu, M. Hong and J. Kwo*, Journal of Crystal growth, 301-302, 588-591, (2007). （Cited：0, SCI：1.809）

29. “Interfacial trap characteristics in depletion mode GaAs MOSFETs”, T. C. Lee, C. Y. Chan, P. J. Tsai, Shawn S. H. Hsu, J. Kwo, M. Hong*, Journal of Crystal growth, 301-302, 1009-1012, (2007). （Cited：0, SCI：1.809）

30. “Depletion mode GaAs-based MOSFET with Ga2O3(Gd2O3) as a gate dielectric”, P. J. Tsai, L. K. Chu, Y. W. Chen, U. N. Chiu, H. P. Yang, P. Chang, J. Kwo, J. Chi, and M. Hong*, Journal of Crystal growth, 301-302, 1013-1016, (2007). （Cited：2, SCI：1.809）

31. “Defining new frontiers in electronic devices with high dielectrics and interfacial engineering”, M. Hong*, W. C. Lee, M. L. Huang, Y. C. Chang, T. D. Lin, Y. J. Lee, J. Kwo, C. H. Hsu and H. Y. Lee, Thin Solid Films, 515, 5581 (2007). （Cited：0, SCI：1.666）

32. “III-V MOSFET’s with High  Dielectrics”, M. Hong,* J. Kwo, P. J. Tsai , Y. C. Chang, M. L. Huang , C. P. Chen, and T. D. Lin, Japan, Jpn. J. Appl. Phys. 46, 5B : 3167（2007）(Cited：2 , SCI : 1.222)

33. “Effect of Al incorporation in the thermal stability of atomic-layer-deposited HfO2 for gate dielectric applications”, Yan-Kai Chiou, Che-Hao Chang, Chen-Chan Wang, Kun-Yu Lee, Tai-Bor Wu*, Raynien Kwo and Minghwei Hong, Journal of The Electrochemical Society, 154 (4) G99-G102 (2007). (Cited：2, SCI: 2.387).

34. “Advance in Next Century Nano CMOSFET Research and Its Future Prospects for Industry”, Huey-liang Hwang, Yan-Kai Chiou, Che-Hao Chang, Chen-Chan Wang, Kun-Yu Lee, Tai-Bor Wu, J. Raynien Kwo, and Minghwei Hong, Kuei-Shu Chang-Liao, Chun-Yuan Lu, Chun-Chang Lu, Yin Yin Kyi, Albert Chin, Chun-Heng Chen, Joseph Ya-min Lee, and Fu-Chien Chiu, Applied Surface Science, 254(1), 236-241, (2007). (Cited：0, SCI : 1.436)

35. “Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) with high dielectric constant”, Z. K. Yang, Y. J. Lee, W. C. Lee, P. Chang, M. L. Huang, and M. Hong, C.-H. Hsu, J. Kwo*, Appl. Phys. Lett. 90, 152908 (2007). （Cited：2, SCI：3.977）.

36. “Structural and electrical characteristics of atomic layer deposited high  HfO2 on GaN”, Y. C. Chang, H. C. Chiu, Y. J. Lee, M. L. Huang, K. Y. Lee, and M. Hong*, Y. N. Chiu, J. Kwo, and Y. H. Wang, Appl. Phys. Lett. 90, 232904 (2007).（Cited：0, SCI：3.977）.

37. “Observation of room temperature ferromagnetic behavior in cluster free in Co doped HfO2 films”, Y. H. Chang, Y. L. Soo, S. F. Lee, W. C. Lee, M. L. Huang, Y. J. Lee, S. C. Weng, W. H. Sun, J. M. Ablett, C-. C. Kao, M. Hong, and J. Kwo*, Appl. Phys. Lett. 91, 082504 (2007). （Cited：0, SCI：3.977）.

38. “Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111), Z. K. Yang, Y. J. Lee, W. C. Lee, P. Chang, M. L. Huanga), M. Hong, K. L. Yu, M.-T. Tang, and C.-H. Hsu*, and J. Kwo*, Appl. Phy. Lett, 91, 202909 (2007). Cited：0, SCI：3.977）.

39. “Local Environment Surrounding Co in MBE-grown Co-doped HfO2 Thin Films Probed by Extended X-ray Absorption Fine Structure”, Y. L. Soo*, S. C. Weng, W. H. Sun, S. L. Chang, W. C. Lee, Y. S. Chang, J. Kwo, M. Hong, J. M. Ablett, C-. C. Kao, D. G. Liu, and J. F. Lee, Phys. Rev. B. Brief Report, 76, 132404 (2007). （SCI：3.107）.

40. “Ga2O3(Gd2O3)/Si3N4 Dual -Layer Gate Dielectric for InGaAs Enhancement Mode MOSFET with Channel Inversion”, J. F. Zheng , W. Tsai, T. D. Lin, Y. J. Lee, C. P. Chen, and M. Hong *, J. Kwo, S. Cui, and T. P. Ma, Appl. Phys. Lett, 91, 223502, (2007). （SCI：3.977）

[2008]

42. “Time dependent preferential sputtering in the HfO₂ layer on Si”, S. J. Chang, W. C. Lee, J. C. Huang*, M. Hong, and J. Kwo, Thin Solid Films, 516, 948 (2008).（Cited：9, SCI：1.693）

43. “Inelastic electron tunneling spectroscopy study of metal-oxide-semiconductor device with high-κ gate dielectrics”, S. L. You, C. C. Huang, H. C. Ho, J Kwo*, W. C. Lee and M. Hong, Appl. Phys. Lett. 92, 012113 (2008).（Cited：3, SCI：3.726）

44. “Transmission Electron Microscopy Characterization of HfO₂/GaAs Heterostructures Grown by Molecular Beam Epitaxy”, S. C. Liou, M. W. Chu*, C. H. Chen, Y. J. Lee, P. Chang, W. C. Lee, Z. K. Yang, M. Hong, J. Kwo, Applied Physics A-materials science and processing, 91, 585, (2008). (Cited：2, SCI：1.857）

45. “Nano-meter thick Y₂O₃ films grown on Si (111) approaching a structural perfection”, C. W. Nieh, Y. J. Lee, W. C. Lee, Z. K. Yang, A. R. Kortan, M. Hong*, J. Kwo, and C. H. Hsu*, Appl. Phys. Lett, 92, 061914 (2008). (Cited：5, SCI：3.726)

46. “Atomic-layer-deposited HfO₂ on In_0.53Ga_0.47As – passivation and energy-band parameters”, Y. C. Chang, M. L. Huang, K. Y. Lee, Y. J. Lee, T. D. Lin, M. Hong^*,J. Kwo*, T. S. Lay, C. C. Liao and K. Y. Cheng, Appl. Phys. Lett, 92, 072901 (2008). （Cited：37, SCI：3.726）

47. “Si metal-oxide-semiconductor devices with high κ dielectrics fabricated using a novel MBE template approach followed by atomic layer deposition”, C. H. Pan, J. Kwo*, K. Y. Lee, W. C. Lee, L. K. Chu, M. L. Huang, Y. J. Lee, and M. Hong, JVST 2008, 25th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico, USA, September 23-26, 2007, Conf. Proc in J. Vacu. Scien. Tech. B, 26, 1178, (2008).（Cited：2, SCI：1.445）

48. “Growth and Structural Characteristics of GaN/AlN/nano thick g-Al₂O₃/Si (111) ”, W. C. Lee, Y. J. Lee, L. T. Tung, S. Y. Wu, C. H. Lee, M. Hong*, H. M. Ng, J. Kwo, and C. H. Hsu, JVST 2008, 25th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico, USA, September 23-26, 2007, Conf. Proc. in J. Vacu. Scien. Tech. B, 26, 1064, (2008).（Cited：5, SCI：1.445）

49. “High-quality nano thick single crystal Y₂O₃ films epitaxially grown on Si (111) – growth and structural characteristics”, Y. J. Lee, W. C. Lee, C. W. Nieh, Z. K. Yang, A. R. Kortan, M. Hong*, J. Kwo, and C.-H. Hsu, JVST 2008. 25th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico, USA, September 23-26, 2007. Conf. Proc. in J. Vacu. Scien. Tech. B, 26, 1124 (2008).（Cited：6, SCI：1.445）

50. “Oxide scalability in Ga₂O₃(Gd₂O₃)/In _0.2Ga_0.80As/GaAs hetero-structures”, K. H. Shiu, C. H. Chiang, Y. J. Lee, W. C. Lee, P. Chang, L. T. Tung, M. Hong* , J. Kwo, and W. Tsai, JVST 2008. 25th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico, USA, September 23-26, 2007, Conf. Proc. J. Vacu. Scien. Tech. B, 26, 1132, (2008).（Cited：10, SCI：1.445）

51. “Molecular beam epitaxy grown Ga₂O₃(Gd₂O₃) high-κ dielectrics for Germanium passivation-x-ray photoelectron spectroscopy (XPS) and electrical characteristics”, C. H. Lee, T. D Lin, K. Y. Lee, L. T. Tung, Y. C. Chang, M. L. Huang, M. Hong*, and J. Kwo, JVST 2008, 25th North American Molecular Beam Epitaxy Conference, Albuquerque, New Mexico, USA, September 23-26, 2007, Conf. Proc. in J. Vacu. Scien. Tech. B, 26, 1128, (2008).（Cited：15, SCI：1.445）

52. “Correlation between Crystal Structure and Photoluminescence for Epitaxial ZnO on Si (111) using a g-Al₂O₃ Buffer Layer”, W.-R. Liu, Y.-H. Li, and W. F. Hsieh^*,C.-H. Hsu^*, W. C. Lee, M. Hong, J. Kwo, J. Physics, D-APPLIED PHYSICS, 41, 065105, (2008).（Cited：3, SCI：2.104）

53. “1nm equivalent oxide thickness in Ga₂O₃(Gd₂O₃) / In_0.2Ga_0.8As metal-oxide-semiconductor capacitors”, K. H. Shiu, T. H. Chiang, P. Chang, L. T. Tung, W. Tsai, J. Kwo*, and M. Hong*, Applied Phys. Letters, 92, 172904, (2008).（Cited：24, SCI：3.726）

54. “Achieving one nanometer capacitive effective thickness in atomic layer deposited HfO₂ on In_0.53Ga_0.47As,” K. Y. Lee, Y. J. Lee, P. Chang, M. L. Huang, Y. C. Chang, M. Hong*, and J. Kwo*, Appl. Phys. Letters, 92, 252908, (2008).（Cited：14, SCI：3.726）

55. “High-performance self-aligned inversion-channel In_0.53Ga_0.47As metal-oxide- semiconductor field effect transistor with Al₂O₃/Ga₂O₃(Gd₂O₃) as gate dielectrics”, T. D. Lin, H. C. Chiu, P. Chang, L. T. Tung, C. P. Chen, M. Hong*, J. Kwo*, Y. C. Wang, and W. Tsai, Appl. Phys. Lett, 93, 033516, (2008).（Cited：54, SCI：3.726）

56. “Inversion-channel GaN nMOSFET with atomic-layer-deposited Al₂O₃ as gate dielectric”, Y. C. Chang, W. H. Chang, H. C. Chiu, L. T. Tung, C. H. Lee, K. H. Shiu, M. Hong*, and J. Kwo*, Appl. Phys. Lett, 93, 053504 (2008).（Cited：15, SCI：3.726）

57. “Self-aligned inversion n-channel In_0.2Ga_0.8As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga₂O₃(Gd₂O₃) dielectric”, C. P. Chen, T. D. Lin, Y. J. Lee, Y. C. Chang, M. Hong*, and J. Kwo, Solid-State Electronics 52, 1615 (2008). Presented at the 2007 ISDRS Univ. Maryland. (Cited：11, SCI: 1.577)

58. “Achieving a low interfacial of states in atomic layer deposited Al₂O₃on In_0.53Ga_0.47As”, H. C. Chiu, L. T. Tung, Y. H. Chang, Y. J. Lee, C. C. Chang, J. Kwo*, and M. Hong*, Appl. Phys. Lett, 93, 202903, (2008). （Cited：15, SCI：3.726）

59. “Approaching Fermi level unpinning in oxide-In_0.2Ga_0.8As”, T. H. Chiang, W. C. Lee, K. H. Shiu, D. Lin, T. D. Lin, J. Kwo, W. E. Wang , W. Tsai, and M. Hong, IEDM Abstract Digest , San Francisco, Dec. (2008).

[2009]

60. “Depletion-mode InGaAs MOSFET with MBE grown Ga₂O₃(Gd₂O₃) gate dielectric”, C. A. Lin, T. D. Lin, C. H. Chiang, M. Hong*, and J. Kwo*, the 15^th International Molecular beam Epitaxy Conference, Vancouver, Canada, Aug 4-8, (2008); J. Crystal Growth, 311, 1954 (2009). (Cited：5, SCI: 1.534 )

61. “Research Advances on III-V MOSFET Electronics Beyond Si CMOS”, J. Kwo* and M. Hong*, the 15^th International Molecular beam Epitaxy Conference, Vancouver, Canada, Aug 4-8, (2008); J. Crystal Growth, 311, 1944 (2009). (Cited：4, SCI: 1.534)

62. “MBE grown nm-thick single crystal Sc₂O₃ template on Si for GaN overgrowth”, W. C. Lee, Y. J. Lee, C. H. Lee, S. Y. Wu, J. Kwo*, C. H. Hsu, H. M. Ng, and M. Hong*, the 15^th International Molecular beam Epitaxy Conference, Vancouver, Canada, Aug 4-8, (2008); J. Crystal Growth, 311, 2006, (2009). (Cited：2, SCI: 1.534)

63. “GaN metal oxide semiconductor diode with MBE-Al₂O₃ as a template followed by ALD growth - Electrical and interfacial characteristics”, Y. H. Chang, H. C. Chiu, W. H. Chang, W. C. Lee, J. Kwo*, and M. Hong*, the 15^th International Molecular beam Epitaxy Conference, Vancouver, Canada, Aug 4-8, (2008), J. Crystal Growth, 311, 2084, (2009). (Cited：2, SCI: 1.534)

64. “High k dielectric single-crystal monoclinic Gd₂O₃ on GaN with excellent thermal, structural, and electrical properties”, W. H. Chang, C. H. Lee, P. Chang, Y. C. Chang, Y. J. Lee, J. Kwo*, C. C. Tsai, J. M. Hong, C.-H. Hsu, and M. Hong*, the 15^th International Molecular beam Epitaxy Conference, Vancouver, Canada, Aug 4-8, (2008); J. Crystal Growth, 311, 2183-2186 (2009). (Cited：7, SCI: 1.534 )

65. “Molecular Beam Epitaxy Grown Al₂O₃/HfO₂ High-κ Dielectrics for Germanium”, W. C. Lee, B. H. Chin, C. H. Lee, L. K. Chu, Y. J. Lee, L. T. Tung, T. D. Lin, M. Hong*, and J. Kwo*, the 15^th International Molecular beam Epitaxy Conference, Vancouver, Canada, Aug 4-8, (2008); J. Crystal Growth. 311, 2187 (2009). (Cited：8, SCI: 1.534)

66. “Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y₂O₃ on Ge” L. K. Chu, W. C. Lee, M. L. Huang, Y. H. Chang, L. T. Tung, C. C. Chang, Y. J. Lee, J. Kwo*, and M. Hong*, the 15^th International Molecular beam Epitaxy Conference, Vancouver, Canada, Aug 4-8, (2008); J. Crystal Growth, 311, 2195-2198 (2009). (Cited：7, SCI: 1.534 )

67. “Inversion Channel Enhancement mode MOSFETs with Regrown Source and Drain Contacts”, C. Liao, D. Cheng, C. Cheng, K. Y. Cheng*, M. Feng, C. H. Chiang, J. Kwo, and M. Hong*, the 15^th International Molecular beam Epitaxy Conference, Vancouver, Canada, Aug 4-8, (2008); J. Crystal Growth, 311, 1958. (Cited：1, SCI: 1.534)

68. “Energy Band Parameters of Atomic Layer Deposited Al₂O₃ and HfO₂ on In_xGa_1-xAs”, M. L. Huang, Y. C. Chang, Y. H. Chang, T. D. Lin, J. Kwo*, and M. Hong*, Appl. Phys. Lett, 94, 052106, (2009). （Cited：7, SCI：3.554）

69. “Domain Matching Epitaxial Growth of High-quality ZnO film using an Y₂O₃ buffer layer on Si (111)”, W.-R. Liu, Y.-H. Li, and W. F. Hsieh*,C.-H. Hsu*, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, Crystal Growth Des. 9 (1), 239-242 (2009). (Cited：5, SCI：4.162）

70. “Ga₂O₃(Gd₂O₃) on Ge without interfacial layers: energy-band parameters and metal oxide semiconductor devices”, L. K. Chu, T. D. Lin, M. L. Huang, R. L. Chu, C. C. Chang, J. Kwo*, and M. Hong*, Appl. Phys. Lett, 94, 202108, (2009).（Cited：10, SCI：3.554）

71. “Surface Exciton Polariton in HfO₂: Electron Energy-Loss Spectroscopy Study”, S.-C. Liou, M.-W. Chu*, Y.-J. Lee, M. Hong, J. Kwo, and C. H. Chen, New Journal of Physics 11, 103009 (2009).（Cited：1, SCI：3.312）

72. “Nanometer-Thick Single Crystal Hexagonal Gd₂O₃ on GaN for Advanced Complementary Metal-Oxide- Semiconductor Technology”, by Wen Hsin Chang, Chih Hsun Lee, Yao Chung Chang, Pen Chang, Mao Lin Huang, Yi Jun Lee, C.-H. Hsu, J. Raynien*, and Minghwei Hong*, Advanced Materials, 21, 4970, (2009). （Cited：4, SCI：8.379）

73. “InGaAs Metal-Oxide-Semiconductor Devices with High k Dielectrics for Science and Technology beyond Si CMOS”, M. Hong*, J. Kwo*, T. D. Lin, and M. L. Huang, MRS Bulletin, 34, 514, (2009).（Cited：9, SCI：6.330）

[2010]

74. “Magnetic excitations in Dy/Y superlattices as seen via inelastic neutron scattering”, A. T. D. Grünwald, A. R. Wildes*, W. Schmidt, E. V. Tartakovskaya, J. Kwo, C. Majkrzak, R. C. C. Ward, and A. Schreyer, Phys. Rev. B. 82, 014426, (2010). (Cited：0, SCI：3.772）

75. “High quality Ga₂O₃(Gd₂O₃) on Ge (100) – electrical and chemical characterizations”, R. L. Chu, L. K. Chu, M. L. Huang, L. T. Tung, T. D. Lin, C. C. Chang, J. Kwo*, and M. Hong*, J. Vac. Sci. Technol. B, vol. 28, p. C3A1-C3A4, (2010). (Cited：0, SCI：1.268）

76. “Monoclinic phase of epitaxial Gd₂O₃ films grown on GaN”, Y. J. Lee, T. Y. Lai, C. H. Lee, P. Chang, S. Y. Wu, C.-H. Hsu, J. Kwo*, and M. Hong*, J. Vac. Sci. Technol. B, vol. 28, p. C3A17-C3A19, (2010). (Cited：0, SCI：1.268）

77. “RF characteristics of self-aligned inversion-channel In_0.53Ga_0.47As MOSFETs using MBE-Al₂O₃/Ga₂O₃(Gd₂O₃) gate dielectrics”, T. D. Lin, P. Chang, H. C. Chiu, J. Kwo*, S. Lin, Shawn S. H. Hsu, and M. Hong*, J. Vac. Sci. Technol. B, 28, p. C3H14-C3H17, (2010). (Cited：1, SCI：1.268）

78. “MBE-HfAlO for passivating InGaAs with 1 nm capacitance effective thickness”, P. Chang, W. C. Lee, M. L. Huang, Y. J. Lee, M. Hong*, and J. Kwo*, J. Vac. Sci. Technol. B, 28, p. C3A9-C3A11 (2010). (Cited：0, SCI：1.268）

79. “Engineering of threshold voltages in MBE-grown Ga₂O₃(Gd₂O₃)/In_0.2Ga_0.8As”, Y. D. Wu, Y. C. Chang, T. D. Lin, T. H. Chiang, J. Kwo*, W. Tsai, and M. Hong*, J. Vac. Sci. Technol. B, 28, p. C3H10-C3H13, (2010). (Cited：3, SCI：1.268)

80. “Al₂O₃/Ga₂O₃(Gd₂O₃) passivation on In_0.20Ga_0.80As/GaAs—structural intactness with high-temperature annealing”, Y. J. Lee, C. H. Lee, L. T. Tung, T. H. Chiang, T. Y. Lai, J. Kwo, C-H Hsu* and M. Hong*, J. Phys. D: Appl. Phys. 43, 135101, (2010). (Cited :2, SCI: 2.105 )

81. “Self-aligned inversion-channel In_0.75Ga_0.25As metal-oxide-semiconductor field- effect-transistors using UHV- Al₂O₃/Ga₂O₃(Gd₂O₃) and ALD-Al₂O₃ as gate dielectrics”, T. D. Lin, H. C. Chiu, P. Chang, Y. H. Chang, Y. D. Wu, M. Hong* and J. Kwo*, Soild-State Electronics, 54, 919-924, (2010). (Cited :2, SCI: 1.438)

82. “Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-k dielectrics on Ge without interfacial layers”, L. K. Chu, R. L. Chu, T. D. Lin, W. C. Lee, C. A. Lin, M. L. Huang, Y. J. Lee, J. Kwo* and M. Hong*, Solid-State Electronics, 54, 965-971, (2010). (Cited :3, SCI: 1.438)

83. “Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO₂ as a gate dielectric”, Y. C. Chang, W. H. Chang, Y. H. Chang, J. Kwo*, Y. S. Lin, S. H Hsu, J. M. Hong, C. C. Tsai, and M. Hong*, Microelectronic Engineering, 87, 11, 2042-2045, (2010). (Cited : 0, SCI: 1.569)

84. “Effective Reduction of Interfacial Traps in Al₂O₃/GaAs (001) Gate Stacks Using Surface Engineering and Thermal Annealing”, Y. C. Chang, C. Merckling*, J. Penaud, C. Y. Lu, W. -E. Wang, J. Dekoster, M. Meuris, M. Caymax, M. Heyns, J. Kwo* and M. Hong*, Appl. Phys. Lett. 97, 112901 (2010). (Cited：5, SCI：3.820）

85. “Structural characteristics of nanometer thick Gd₂O₃ films grown on GaN (0001)", W. H. Chang, P. Chang, T. Y. Lai, Y. J. Lee, J. Kwo*, C. -H. Hsu*, and M. Hong*, Crystal Growth and Design, 10, 5117, (2010). (Cited：0, SCI：4.389）

[2011]

86. “Thermal annealing and grain boundary effects on ferromagnetism in Y₂O₃:Co diluted magnetic oxide nanocrystals”, Y. L. Soo*, T. S. Wu , C. S. Wang, S. L. Chang, H. Y. Lee, P. P. Chu, C. Y. Chen, L. J. Chou, T. S. Chan, C. A. Hsieh, J. F. Lee, J. Kwo, and M. Hong, Appl. Phys. Lett. 98, 031906 (2011). (SCI: 3.820)

87. “InGaAs and Ge MOSFETs with High k Dielectrics”, W. C. Lee, P. Chang, T. D. Lin, L. K. Chu, H. C. Chiu, J. Kwo* and M. Hong*, Microelectronic Engineering, 88, 336, (2011). (Cited: 0, SCI: 1.569)

88. “Electrical properties and interfacial chemical environments of in-situ atomic layer deposited Al₂O₃ on freshly molecular beam epitaxy grown GaAs”, Y. H. Chang, M. L. Huang, P. Chang, C. A. Lin, Y. J. Chu, B. R. Chen, C. L. Hsu, J. Kwo*, T. W. Pi and M. Hong*, Microelectronic Engineering, 88, 440, (2011). (Cited: 0, SCI: 1.569)

89. “H₂S Molecular Beam Passivation of Ge(001)”, C. Merckling*, Y. C. Chang, C. Y. Lu, J. Penaud, M. El-Kazz, F. Bellenger, G. Brammertz, M. Hong, J. Kwo, M. Meuris, J. Dekoster, M. M. Heyns, M. Caymax, Microelectronic Engineering, 88, 399, (2011). (Cited: 0, SCI: 1.569).

90. “Low Interfacial Trap Density in Absence of Peak Features Near Midgap of Ga₂O₃(Gd₂O₃)/In_0.2Ga_0.8As Gate Stacks”, C. A. Lin, H. C. Chiu, W. H. Chang, T. H. Chiang_,Y. C. Chang, L. H. Lai, T. D. Lin, J. Kwo*, W. E Wang, J. Dekoster, M. Caymax, M. Meuris, M. Heyns and M. Hong*, accepted by Proc. of the 16^th International Conference on Molecular Beam Epitaxy, Berlin, Germany, August 22-27, 2010, Journal of Crystal Growth, 323, 99, (2011). (SCI: 1.737 )

91. “Phase transformation of MBE-grown nm thick Y₂O₃ on GaN”, W. H. Chang, P. Chang, T. Y. Lai, Y. J. Lee, J. Kwo*, C. -H. Hsu, C. C. Tsai, J. M. Hong and M. Hong*, accepted by Proc of the 16^th International Conference on Molecular Beam Epitaxy, Berlin, Germany, August 22-27, 2010, Journal of Crystal Growth, 323, 107-110, (2011). (SCI: 1.737 ).

92. “Strong crystal anisotropy of magneto-transport property in Fe₃Si epitaxial films”, H. Y. Hung, S .Y. Huang, P. Chang, W. C. Lin, Y. C. Liu, S. F. Lee*, M. Hong, and J. Kwo*, accepted by Proc. of the 16^th International Conference on Molecular Beam Epitaxy, Berlin, Germany, August 22-27, 2010, Journal of Crystal Growth, 323, 372-375, (2011) (SCI: 1.737).

93. “MBE—Enabling technology beyond Si CMOS”, P. Chang, W.C. Lee, T.D. Lin, C.H. Hsu*, J. Kwo*, M. Hong*, accepted by Proc. of the 16^th International Conference on Molecular Beam Epitaxy, Berlin, Germany, August 22-27, 2010, Journal of Crystal Growth, 323, 511–517, (2011). (SCI: 1.737).

94. “Achieving very high drain current of 1.23 mA/mm in a 1-mm-gate-length self-aligned inversion-channel MBE-Al₂O₃/Ga₂O₃(Gd₂O3)/ In_0.75Ga_0.25As MOSFET”, T.D. Lin, P. Chang, Y.D. Wu, H.C. Chiu, J. Kwo*, M. Hong*, Journal of Crystal Growth, 323, 518–521, (2011). (SCI: 1.737).

95. “Magnetization reversal processes of epitaxial Fe₃Si films on GaAs(001)”, Y. C. Liu, P. Chang, S. Y. Huang, L. J. Chang, W. C. Lin, S. F. Lee, M. Hong, and J. Kwo*, the Conference Proc. Magnetism and Magnetic Materials”, Atlanta, GA, Nov. 15-18, (2010), J. Appl. Phys. 109, 07D508, (2011). (SCI: 2.064).

96. “Attainment of low interfacial trap density absent of a large mid-gap peak in In_0.2Ga_0.8As by Ga₂O₃(Gd₂O₃) passivation”, C. A. Lin, H. C. Chiu, T. H. Chiang, T. D. Lin, Y. H. Chang, W. H. Chang, Y. C. Chang, W.–E. Wang, J. Dekoster, T. Y. Hoffmann, M. Hong*, and J. Kwo*, Appl. Phys.Lett, 98, 062108, (2011). (SCI: 3.820)

97. “High-resolution core-level photoemission study of CF₄-treated Gd₂O₃(Ga₂O₃) gate dielectric on Ge probed by synchrotron radiation”, T.-W. Pi, M. L. Huang, W.C. Lee, L. K. Chu, T. D. Lin, T. H. Chiang, Y. C. Wang, M. Hong*, and J. Kwo*, Appl. Phys. Lett, 98, 062903, (2011). (SCI: 3.820)

98. “Electronic structures of Ga₂O₃(Gd₂O₃) gate dielectric on n-Ge(001) as grown and after CF₄ plasma treatment: A synchrotron-radiation photoemission study”, T.-W. Pi*, W.C. Lee, M. L. Huang, L. K. Chu, T. D. Lin, T. H. Chiang, Y. C. Wang, Y. D. Wu, M. Hong*, and J. Kwo*, J. Appl. Phys. 109, 063725, (2011). (SCI: 2.064)

99. “Direct determination of flat-band voltage for metal/high κ oxide/ semiconductor heterointerfaces by electric-field-induced second-harmonic generation”, C.-L. Chang, W. C. Lee, L. K. Chu, M. Hong, J. Kwo*, and Y.-M. Chang*, Appl. Phys. Lett. 98, 171902, (2011). (SCI: 3.820)

100. "Self-aligned inversion-channel In(0.2)Ga(0.8)As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al₂O₃/Ga₂O₃(Gd₂O₃) as the gate dielectric”, W. H. Chang, T. H. Chiang, Y. D. Wu, M. Hong, C. A., Lin, J. Kwo*, J. Vacu. Sci.Tech., B, 29, 03C122, (2011). (SCI: 1.268)

101. “The Growth of an Epitaxial ZnO Film on Si(111) with a Gd₂O₃(Ga₂O₃) Buffer Layer”, B. H. Lin, W. R. Liu, S. Yang, C. C. Kuo, C.-H. Hsu*, W. F. Hsieh*, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, Cryst. Growth Des. 11, 2846–2851, (2011). (SCI: 4.389)

102. “Low interfacial trap density and sub-nm equivalent oxide thickness in In_0.53Ga_0.47As (001) MOS devices using molecular beam deposited HfO₂/Al₂O₃ as gate dielectrics”, L. K. Chu, C. Merckling*, A. Alian, J. Dekoster, J. Kwo, M. Hong, M. Caymax, and M. Heyns, Appl. Phys. Lett, 99, 042908 (2011).（SCI：3.820）

103. “Defect density reduction of the Al₂O₃/GaAs(001) interface by using H₂S molecular beam Passivation”, C. Merckling*, Y. C. Chang, C.Y. Lu, J. Penaud, G. Brammertz, M. Scarrozza, G. Pourtois, J. Kwo, M. Hong, J. Dekoster, M. Meuris, M. Heyns, M. Caymax, Surface Science, 605, 1178 (2011). (SCI: 2.010)

104. “In situ atomic layer deposition and synchrotron-radiation photoemission study of Al₂O₃ on pristine n-GaAs(001)-4 x 6 surface”, Y. H. Chang, M. L. Huang, P. Chang, J. Y. Shen, B. R. Chen, C. L. Hsu, T. W. Pi*, M. Hong* and J. Kwo*, Microelectronic Engineering, 88, 1101, (2011). （SCI：1.569）

105. “Atomic-layer-deposited Al₂O₃ and HfO₂ on GaN: A comparative study on interfaces and electrical characteristics”, Y. C. Chang, M. L. Huang, Y. H. Chang, Y. J. Lee, H. C. Chiu, J. Kwo* and M. Hong*, Microelectronic Engineering, 88, 1207, (2011). （SCI：1.569）

106. “Direct measurement of interfacial structure in epitaxial Gd₂O₃ on GaAs (001) using scanning tunneling microscopy”, Y. P. Chiu*, M. C. Shih, B. C. Huang, J. Y. Shen, M. L. Huang , W. C. Lee, P. Chang , T. H. Chiang ,M. Hong*, J. Kwo*, Microelectronic Engineering, 88, 1058, (2011). （SCI：1.569）

107. “Intrinsic spin-dependent thermal transport”, S. Y. Huang*, W. G. Wang, S. F. Lee, J. Kwo, and C. L. Chien*, Phys. Rev. Lett. 107, 216604 (2011). (SCI: 7.621)

108. “Atomic-scale Investigation on the unpinning mechanism at the heterointerface of Gd₂O₃/GaAs (100)”, Y. P. Chiu, B. C. Huang_,M. C. Shih, J. Y. Shen, M. L. Huang, W. C. Lee, P. Chang, T. H. Chiang, C. S. Chang, M. Hong*, and J. Kwo*, Appl. Phys. Lett, 99, 212101, (2011). (SCI: 3.820).

109. “Achieving a Low Interfacial Density of States with a Flat Distribution in High k Ga₂O₃(Gd₂O₃) Directly Deposited on Ge”, C. A. Lin, D. Lin, T. H. Chiang, R. L. Chu, L. K. Chu, T. D. Lin, Y. C. Chang, W.-E. Wang, J. Kwo, and M. Hong*, Appl. Phys. Express, 4, 111101 (2011). （SCI：2.747）

110. “Self-Aligned Inversion-Channel In_0:53Ga_0:47As Metal–Oxide–Semiconductor Field-Effect Transistors with In-situ Deposited Al₂O₃/Y₂O₃ as Gate Dielectrics”, P. Chang, H. C, Chiu, T. D. Lin, M. L. Huang, W. H. Chang, S. Y. Wu, K. H. Wu, M. Hong*, and J. Kwo*, Appl. Phys. Express, 4, 114202, (2011). （SCI：2.747）

[2012]

111. “Ge metal-oxide-semiconductor devices with sub-nm equivalent oxide thick Ga₂O₃(Gd₂O₃)”, L. K. Chu, T. H. Chiang, T. D. Lin, Y. J. Lee, R. L. Chu, J. Kwo*, and M. Hong*, Microelectronic Enginnering, 91, 89-92,(2012). （SCI：1.569）

112. “The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a g-Al₂O₃ buffer layer”, W.-R. Liu, B. H. Lin, S. Yang, C. C. Kuo, Y.-H. Li, C.-H. Hsu, W. F. Hsieh, W. C. Lee, M. Hong, and J. Kwo, Cryst. Eng. Comm. 14, 1665, (2012). (Cited：1, SCI: 3.879)

113. “Metal oxide semiconductor devices studies of molecular beam deposited Al₂O₃/InP heterostructures with various surface orientations (001), (110), and (111), L. K. Chu, C. Merckling*, J. Dekoster, J. Kwo, M. Hong, M. Caymax, and M. Heyns, Appl. Phys. Express, 5, 061202, (2012). (SCI: 2.731).

114. “Surface-atom core-level shift in GaAs(111)A-2x2”, T. W. Pi, B. R. Chen, M. L. Huang, T. H. Chiang, G. K. Wertheim, M. Hong*, and J. Kwo*, J. Phys. Soc. Jpn., 81, 064603, (2012). (SCI: 2.087)

115. “InAs MOS devices with MBE-grown Gd₂O₃ passivation”, C. A. Lin, P.-C. Chiu, M. L. Huang, H.-K. Lin, T. H. Chiang, W. C. Lee, Y. C. Chang,Y. H. Chang, J.-I. Chyi, G. J. Brown, J. Kwo*, and M. Hong*, J. Vac. Sci. Technol. B 30, 02B118 (2012). (Cited：0, SCI：1.267).

116. “Optimization of non-gold ohmic metal contacts for advanced GaAs-based CMOS device”, W. H. Chang, T. H. Chiang, T. D. Lin, Y. H. Chen, K. H. Wu, T. S. Huang, M. Hong*, and J. Kwo*, J. Vac. Sci. Tech. B 30, 02B123, (2012). (Cited：0, SCI：1. 267)

117."Correlation Between Oxygen Vacancies and Ferromagnetism in Mn-doped Y2O3 Nanocrystals Investigated by Defect Engineering Techniques”, T. S. Wu, Y. C. Chen, Y. F. Shiu, H. J. Peng, S. L. Chang, H. Y. Lee, P. P. Chu, C. Y. Chen, L. J. Chou, T. S. Chan, C. A. Hsieh, J. F. Lee, J. Kwo, M. Hong, and Y. L. Soo, Appl. Phys. Lett. 101, 022408, (2012). (SCI: 3.794)

118.“Realization of high quality HfO₂ on In_0.53Ga_0.47 As by in-situ atomic-layer-deposition”, T. D. Lin (林宗達), Y. H. Chang (張宇行),C. A. Lin (林俊安), M. L. Huang (黃懋霖),W. C. Lee (李威縉) , J. Kwo (郭瑞年)*, and M. Hong(洪銘輝)*, Appl. Phys. Lett, 100, 172110, (2012). (Cited：2, SCI: 3. 794)

119.“Spin pumping induced inverse spin-Hall Effects in La0.7Sr 0.3MnO3/Pt bilayer film”, G. Y. Luo, M. Y. Song, H. Y. Hung, Y. C. Chiu, J. Kwo, S. F. Lee, C. R. Chang, and J. G. Lin*, IEEE Transactions on Magnetics, 48(11), 3958-3960 (2012). Conf. Proc. Intermag. 2012 Conferene, May 7-12, 2012, Vancouver, Canada. ( SCI: 1.422)

120.“Growth mechanism of atomic layer deposited Al2O3 on GaAs(001)-4x6 surface with trimethylaluminum and water as precursors”, M. L. Huang, Y. H. Chang, T. D. Lin, S. Y. Lin, Y. T. Liu, T. W. Pi*, M. Hong*, and J. Kwo*, Appl. Phys. Lett. 101, 212101 (2012). (SCI: 3. 794)

121. “Effective Passivation of In0.2Ga0.8As by HfO2 Surpassing Al2O3 via in-situ Atomic Layer Deposition”, Y. H. Chang, C. A. Lin, M. L. Huang, Y. T. Liu, T. H. Chiang, T. D. Lin, H. Y. Lin, T. W. Pi, J. Kwo*, and M. Hong*, Appl. Phys. Lett, 101, 172104, (2012). (SCI: 3. 794)

122.“Room Temperature Ferromagnetic behavior in Cluster Free, Co doped Y2O3 Dilute Magnetic Oxide Films”, C. N. Wu, S. Y. Huang, W. C. Lee, Y. H. Chang, T. S. Wu, Y. L. Soo, M. Hong*, and J. Kwo*, Appl. Phys. Lett, 101, 162403, (2012). (SCI: 3. 794)

123.“Thickness-dependent lattice relaxation and the associated optical properties of ZnO epitaxial films grown on Si (111)”, W.-R. Liu, B. H. Lin, C. C. Kuo, W. C. Lee, M. Hong, J. Kwo, C.-H. Hsu*, and W. F. Hsieh*, Cryst. Eng. Comm, 14, 8103 (2012). (SCI: 3.879)

[2013]

124."Spin Thermal Transport and Application”, S. Y. Huang, D. Qu, W. G. Wang, S. F. Lee, J. Kwo*, and C. L. Chien*, IEDM Digest, 12, 255-258, (2013).

125. “Vertical-cavity and randomly scattered lasing from different thicknesses of epitaxial ZnO films grown on Y₂O₃-buffered Si (111)”, C. C. Kuo, W.-R. Liu, B. H. Lin, W. F. Hsieh*, C.-H. Hsu, W. C. Lee, M. Hong, and J. Kwo, Optics Express, 21, 1857, (2013). (SCI: 3.546)

126. “Observation of Room Temperature Ferromagnetism in Cluster Free, Co doped Y₂O₃ Dilute Magnetic Oxide Films”, C. N. Wu, S. Y. Huang, W. C. Lee, Y. H. Chang, T. S. Wu, Y. L. Soo, M. Hong*, and J. Kwo*, J. Appl. Phys, 113, 17C309 (2013). (SCI: 2.210)

127.“Detection of inverse spin Hall effect in epitaxail ferromagnetic metal films”, H. Y. Hung, G. Y. Luo, Y. C. Chiu, P. Chang, W. C. Lee, J. G. Lin, S. F. Lee, M. Hong*, and J. Kwo*, J. Appl. Phys. 113, 17C507 (2013). (SCI: 2.210)

128."Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect transistors using molecular beam deposited Al₂O₃ as a gate dielectric on different reconstructed surfaces”, Y. C. Chang, W. H. Chang, C. Merckling, J. Kwo*, and M. Hong*, Appl. Phys. Lett. 102, 093506 (Mar. 2013). (SCI: 3.794)

129."Phase transformation of molecular beam epitaxy-grown nm thick Gd₂O₃ and Y₂O₃ on GaN”, Wen-Hsin Chang, Shao-Yun Wu, Chih-Hsun Lee, Te-Yang Lai, Yi-Jun Lee, Pen Chang, Chia-Hung Hsu, Tsang-Shiou Huang, J. Raynien Kwo, and Minghwei Hong*, ACS Appl. Mater. & Interfaces 5, 1436-1441 (2013). (SCI: 5.008), ranking of 26/241.

130.“Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs (001)-4 × 6 and As-rich GaAs(001)-2 × 4 surfaces: a synchrotron radiation photoemission study”, Tun-Wen Pi*, Hsiao-Yu Lin, Ya-Ting Liu, Tsung-Da Lin, Gunther K Wertheim*, Jueinai Kwo*, and Minghwei Hong*, Nanoscale Research Letters, 8, 169, (Apr. 2013). (SCI: 2.524)

131.“Interfacial electronic structure of trimethyl-aluminum and water on an In0.20Ga0.80As(001)-4×2 surface: A high-resolution core-level photoemission study”, T. W. Pi *, H. Y. Lin, T. H. Chiang, Y. T. Liu, G. K. Wertheim, J. Kwo*, and M. Hong*, J. Appl. Phys. 113, 203703 (May 2013). (SCI: 2.210)

132."Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition”, T. W. Pi, H. Y. Lin, T. H. Chiang, Y. T. Liu, Y. C. Chang, T. D. Lin, G. K. Wertheim, J. Kwo*, M. Hong*, Applied Surface Science, 284, 601, (Aug. 2013). (SCI: 2.112).

133.“Surface passivation of GaSb(100) using molecular beam epitaxy Y₂O₃ and atomic layer deposited Al₂O₃ – a comparative study,” R. L. ChuW. J. Hsueh, T. H. Chiang, W. C. Lee, H. Y. Lin, T. D. Lin, G. J. Brown, J. I. Chyi, T. W. Pi,^* J. Kwo*, and M. Hong^*, Appl. Phys. Express, 6, 121201 (2013). (SCI: 2.731)

134.“High-performance self-aligned inversion-channel In_0.53Ga_0.47As metal-oxide- semiconductor field effect transistors by in-situ atomic-layer-deposited HfO₂”_,T. D. Lin, W. H. Chang, R. L. Chu, Y. C. Chang, Y. H. Chang, M. Y. Lee, P. F. Hong, Min-Cheng Chen, J. Kwo,* and M. Hong*, Appl. Phys. Lett., 103, 253509 (2013)

[2014]

135.“Semiconductor-insulator interfaces – High k dielectrics on (In)GaAs”, T. W. Pi, T. D. Lin, W. H. Chang, Y. C. Chang, J. Kwo, and M. Hong*, submitted to the Wiley Encyclopedia of Electrical and Electronics Engineering, (2013). (Invited article).

136.“Synchrotron radiation photoemission study of interfacial electronic structure of HfO2 on In0.53Ga0.47As(001)-4 x 2 from atomic layer deposition", T. W. Pi*, T. D. Lin, H. Y. Lin, Y. C. Chang, G. K. Wertheim, J. Kwo*, and M. Hong*, Appl. Phys. Lett., 104, 042904 (2014). (SCI: 3.794)

137.“High k/InGaAs for ultimate CMOS – interfacial passivation, low ohmic contacts, and device performance”, W. H. Chang, T. D. Lin, M. H. Liao, T. W. Pi, J. Kwo, and M. Hong, ECS symposium, Orlando, FL, 6, 2014. Invited paper, submitted, (2014)

138.“Realization of High k Gate Dielectrics on High Carrier Mobility Semiconductors Beyond Si CMOS”, J. Kwo*, Y. C. Chang, T. D. Lin, M. L. Huang, C. A. Lin, Y. H. Chang, Y. C. Liu, P. Chang, W. C. Lee, Y. D. Wu, L. K. Chu, C. Merkling, W. W. Pai, Y. P. Chiu, T. W. Pi, and M. Hong*, Conf. Proc. 13th International Molecular Beam Epitaxy, submitted to J. Crystal Growth, (2012). (SCI: 1.552)

139.“Low interfacial trap density in in-situ ALD-HfO₂/In_0.53Ga_0.47As hetero-structure by conductance method and DLTS measurement”, C. A. Lin, C. L. Tsai, M. C. Hsieh, Y. H. Chang, T. D. Lin, J. F. Chen, M. Hong*, and J. Kwo*, to be submitted to Appl. Phys. Lett. (2013). (SCI: 3.794)

140.“High quality strain relaxed thin film growth of Sr2RuO4 by pulsed laser dual-target deposition”, S. Y. Huyan, C. N. Wu, J. Y. Lee, Y. C. Liu, C. F. Lee, H. Y. Lin, Y. W. Chen, H. L. Hung, M. Hong* and J. Kwo*, to be submitted to Appl. Phys. Materials, (2013).